CEF35P10 Search Results
CEF35P10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEP35P10Contextual Info: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
CEP35P10/CEB35P10 CEF35P10 -100V, O-220 O-263 CEP35P10 |