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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 1K 1K G2 High power and current handing capability.	Original	CEC8218	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.

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CEC8218

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