CE5B Search Results

marking code AANG

Abstract: NT77 MT4C4256 2S650
Contextual Info: ADVANCE MT42C8255 TICittiOLOC' MC 2 MEG VRAM 256K x 8 DRAM WITH 5 1 2 x 8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible

KM416C1000-7

Contextual Info: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications

MT4C4001

Abstract: mt4c4001jdc sm03b
Contextual Info: MICRON TECHNOLOGY INC 55E D WÊ blllSHT ITT H I URN M T4C4001J DIE 1 MEG x 4 DRAM fAICRQN MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE Top View 14 13 12 11 10 15 5 4 3 2 □ □ □ □ □ □□□ □ □ □ □□□ □ DIE DATA BASE D15B

Contextual Info: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

A/M29F002BT(45/55/70/90/64K DRAM

Contextual Info: M • I C R O N M T 4 C 1 6 7 0 /1 6 4 K X 16 D R A M DRAM 64K x 1 6 DRAM STATIC COLUMN MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical

tc 97101

Contextual Info: ADVANCE MT16LD T 464(S) M IC R O N 4 MEG x 64 DRAM M OD ULE 4 MEG x 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply

Contextual Info: ~ 7 ^ ^ é -3 3 -J F U J I TS U M I C R O E L E C T R O N I C S 47E D February 1990 Edition 1.0 DATA SH EET 374^7^2 001*1543 b •FMI FUJITSU MB81C4256-70U-80U-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 X 4 Bits Fast Page Mode DRAM T h e Fujitsu M B81C4256 is a C M O S , fully decoded dynam ic RAM organized a s

DG113

Abstract: Samsung Capacitor sse samsung pram
Contextual Info: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7

Contextual Info: Preliminary DRAM MODULE KMM5362205BW/BWG KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 • Part Identification Dynamic RAM high density memory module. The

Contextual Info: - PRELIM IN ARY- April 1996 Edition 2.1 FUJITSU PRO DUCT PROFILE SHEET M B 8 14400C-60/-70 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: MEMORY 1 M x 16 BIT EMODEDYNAMICRA MB81V18160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V18160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V18160B features a “fast page” mode of operation whereby high­

cr5a5

Abstract: epson ca18 EA6 SMD 512M acp ca14 S1C33L01 iV220 iv1013 APP15 Epson ca22
Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33401 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not

AN4256

Abstract: "Video RAM" KM4216C256 KM4216V256 512x512x16
Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

Contextual Info: N0'GFBGF05GDD7@FE0GB0FA0DA N0*A +0A?B>;3@F N0!@6GEFDK0+F3@63D60 35=39703@60(;@AGF N0CE.070E.0!@BGF0%A67>E N0'GFBGF0.A>F39706<GEF?7@F N0*7?AF70'@9'88  ;0%4.)60 )+0)16502033/,'%6,215 ,7>75A?G@;53F;A@E 3F30A?G@;53F;A@E &7FIAD=;@90CG;B?7@F ,7EF0CG;B?7@F

Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S M7E D 3 7 M^7 b 2 o o n s b ? * • 17 i~ November 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C4256A-60/-70/-80/-10 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 X 4 Bits Fast Page Mode DRAM The Fujitsu M B81C 4256A is a CMOS, fully decoded dynam ic RAM organized as

Contextual Info: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port