Untitled
Abstract: No abstract text available
Text: SUNCON Aluminum Electrolytic Capacitors • This series has 10 to 2 0% less impedance with same package than CE-AX series. • 105T . 1.000 to 2.000hrs. • Solvent proof within 2 minutes) • Specifications Items Condition Specifications Rated voltage (V)
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000hrs.
120HZ/20TC
100kHz,
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PDF
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Untitled
Abstract: No abstract text available
Text: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • This series has 10 to 20% less impedance with same package than CE-AX series. • 105T!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e
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000hrs.
120HZ/201C
120HZ/20TC
16X16
100kHz.
100kHz,
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PDF
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TO-3P
Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Text: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)
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T0-220
KSD1413
KSB1023
KSD1589
KSB1098
KSD1417
KSB1022
TIP140F
TIP145F
TO-3P
TIP140
TIP145
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PDF
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Untitled
Abstract: No abstract text available
Text: CARD E D G E C O N N EC TO R S 1258 series •FEA TUR ES % 3.96mm contact centersi 'Dual lead% Canti-lever contacts Accepts 1.6mm thick board ■SPECIFICATIONS C u rren t R a tin g : 3A C o n tac t R e sistan ce : 16m£2 m ax. D ielectric W ith sta n d in g V o lta g e :
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5000M&
DC500V)
UL94V-0)
1258-XXX-XXX
IIIIIIIIIIIIIII11II
8587S33
0211-3S9810
F/E8912-02D-KS
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PDF
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RNI55W
Abstract: No abstract text available
Text: Photodetector Sun 3mm Photodetector RNI30W Water Clear Lens Absolute Maximum Rating 25°C unless otherwise notes Collector to Emitter Breakdown Voltage 30V V br c e o Emitter to Collector Breakdown Voltage 5V Operating Temperature Range - 40 - + 85“C Lead Soldering Temperature (4mm for 5 Sec)
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RNI30W
100mW
100uA
100ohm
940nm
RNI55W
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PDF
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Untitled
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S INC 4SE D El T'ìbmMS GGlllMM 2 • S N G K KM23C4100 CMOS MASK ROM T W G ' 3 - i 5 - 4M-Bit (512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte M ode: 524,288 x 8 W ord Mode: 26 2,14 4x16
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KM23C4100
8/256K
150ns
100fiA
40-pin
KM23C4100
DQ11147
KM23C4100)
4100FP
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION T he Sam sung RAM high K M M 3 7 2 F 4 0 1 0 B d e n s ity K M M 3 7 2 F 4 0 (1 )0 B
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KMM372F400BK/BS
KMM372F41OBK/BS
KMM372F400BK/BS
KMM372F41
16bits
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PDF
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Untitled
Abstract: No abstract text available
Text: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • 10 5 t!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e (V) Specifications 6 .3 10 16 25 35 50 8 .0 13 20 32 44 63 CE-BE CE-BD
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000hrs.
120HZ/20TC
100kHz.
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V320 8 0BS1 KMM372V320(8)0BS1 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am sung FEATURES K M M 372V 320(8)0B S 1 is a 32 M x72 bits • Part Identification D ynam ic RAM high de n sity m em o ry m odule. T he S am sung
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KMM372V320
16Mx4,
168-pin
3280B
3200B
150Max
16000B
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PDF
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Untitled
Abstract: No abstract text available
Text: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage
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OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am su ng K M M 374F 160(8)0B K 1 FEATURES is a 16M x72bits • Part Identification D ynam ic RAM high d e n sity m em o ry m odule. T he S am sung
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KMM374F160
16Mx4,
x72bits
168-pin
350Max
89Max)
1680B
1600B
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C256CL is a CMOS high speed 2 6 2 ,1 4 4 x 4 D ynam ic Random A ccess M em ory. Its de sig n is o p tim ized fo r high pe rform ance ap p lica tio n s
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KM44C256CL
256Kx4
KM44C256CL
KM44C256CL-6
110ns
130ns
KM44C256CL-8
KM44C256CL-7
150ns
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PDF
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r761 b
Abstract: No abstract text available
Text: ¥/iïl H EW LE TT* mLtLMPACKARD High Performance Surface Mount Flip Chip LEDs Technical Data : 'Ì' SunPow er Series HSMA-H670/H690/H770/ H790/R661/R761 HSMC-H670/H690/H770/ H790/R661/R761 HSML-H670/H690/H770/ H790/R661/R761 F e atu res A pplications • High B righ tn ess AlInGaP
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HSMA-H670/H690/H770/
H790/R661/R761
HSMC-H670/H690/H770/
HSML-H670/H690/H770/
H790/R661/R761
5966-0618E
968-1097E
r761 b
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372V160 8 0BK/BS DRAM MODULE KMM372V160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • T he S am sung K M M 3 7 2 V 1 6 0 (8 )0 B is a 16M x72bits D ynam ic Part Identification Part num ber
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OCR Scan
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KMM372V160
16Mx4,
x72bits
168-pin
150Max
350Max
89Max)
16000B
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PDF
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Untitled
Abstract: No abstract text available
Text: TAE SUNG D IPPED TANTALUM C A P A C IT O R • S p e c ific a tio n s ^ : -5 5C • Operating Temperature Range ~ +125 C Above 85 °C - with Voltage Derating •Tolerance :± 1 0 % ;± 2 0 % • DC Leakage Current : U £ 0.01 C*Ur pA • Dissipation Factor
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M X 32 DRAM SIM M Using 4M x16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am sung K M M 53 24 004 B is a 4M x3 2b its D ynam ic RAM high de n sity m em o ry m odule. T he S am su ng K M M 53 24 004 B
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM29W32000TS
29V32000
KM29N32000
KM29W32000
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PDF
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KMM536256B-8
Abstract: KMM536256B LY 9525
Text: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4
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OCR Scan
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KMM536256B
256KX36
20-pin
18-pin
72-pin
536256B-
536256B8
130ns
150ns
180ns
KMM536256B-8
KMM536256B
LY 9525
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W16000ATS Document T ills 2M x 8 Bit NAND Flash Memory R evision H istory Revision No. History Draft Date Remark 0.0 Initial issue. ApriM 0th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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OCR Scan
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KM29W16000ATS
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PDF
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YC 2604
Abstract: No abstract text available
Text: KM41C1000BI CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung KM41C1000BL is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess Memory. Its de sign is op tim ize d fo r high pe rform ance ap p lica tio n s
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KM41C1000BI
130ns
150ns
180ns
KM41C1000BL
18-LEAD
20-LEAD
YC 2604
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V404BS KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am sung K M M 37 2V 4 04 B is a 4 M x7 2 b its D yn am ic RAM Part Identification high d e n sity m em ory m odule. The S am sung K M M 37 2V 4 04 B
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OCR Scan
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KMM372V404BS
KMM372V404BS
4Mx16
168-pin
54Max)
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PDF
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Untitled
Abstract: No abstract text available
Text: SUNCON Aluminum Electrolytic Capacitors • 1051C, 1.OOOhrs. • Solvent proof within 2 minutes • Specifications Items Condition Speoifications Rated voltage (V) - 6.3 10 16 25 35 50 Surge voltage (V) Room temperature 8.0 13 20 32 44 63 0.14 0.14 Category temperature range fC)
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OCR Scan
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1051C,
120HZ/2CC
120Hz,
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-1095; Rev 2; 12/97 1 -Ce ll t o 3 -Ce ll, H igh-Pow e r, Low -N oise , St e p-U p DC-DC Conve rt e rs Synchronous rectification provides a 5% efficiency improvement over similar nonsynchronous boost regulators. In standby mode, pulse-skipping PFM operation
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Original
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300kHz
200kHz
400kHz
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M X 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53 61 600 4B is a 16 M x36 bits RAM high d e n sity m em o ry m odule. T he D ynam ic S am sung
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OCR Scan
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
16Mx1
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PDF
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