CDR33BX Search Results

BX1210

Contextual Info: CDR33BX393AKSS-T&R aka CDR33BX393AKSS-T&R CDR33BX393AKSS-T&R Capacitor, ceramic, 0.039 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: C1210N823K5XRH7189 aka C1210N823K5XRH7189 CDR33BX823AKSR-T&R Capacitor, ceramic, 0.082 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: KEMET Part Number: CDR33BX104AKWS C1210N104K5XSL[W], C1210N104K5XSL[W]-MILITARYBULK Capacitor, ceramic, 0.1 uF, +/-10% Tol, 50V, BX, 1210 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol

Contextual Info: C1210N393K5XRH7189 aka C1210N393K5XRH7189 CDR33BX393AKSR-T&R Capacitor, ceramic, 0.039 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: C1210N104K5XSL[W] aka C1210N104K5XSL[W] C1210N104K5XSL[W]-MILITARYBULK CDR33BX104AKWS Capacitor, ceramic, 0.1 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W B 1.5 3.2 2.5 0.5 +0 +/-0.25 +/-0.25 +/-0.25 2006-2012 IntelliData.net

Contextual Info: C1210N153K1XSH7189 aka C1210N153K1XSH7189 CDR33BX153BKSS-T&R Capacitor, ceramic, 0.015 uF, +/-10% Tol, 100V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: KEMET Part Number: CDR33BX104AKZP C1210N104K5XPL, C1210N104K5XPL-MILITARYBULK Capacitor, ceramic, 0.1 uF, +/-10% Tol, 50V, BX, 1210 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol T 1.5

Contextual Info: KEMET Part Number: C1210N104M5XSH7189 C1210N104M5XSH7189, CDR33BX104AMSS-T&R Capacitor, ceramic, 0.1 uF, +/-20% Tol, 50V, BX, 1210 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol T 1.5

Contextual Info: C1210N473K5XSH7189 aka C1210N473K5XSH7189 CDR33BX473AKSS-T&R Capacitor, ceramic, 0.047 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: CDR33BX563AKSS-T&R aka CDR33BX563AKSS-T&R CDR33BX563AKSS-T&R Capacitor, ceramic, 0.056 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: C1210N683K5XSH7189 aka C1210N683K5XSH7189 CDR33BX683AKSS-T&R Capacitor, ceramic, 0.068 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

Contextual Info: C1210N223K1XSH7189 aka C1210N223K1XSH7189 CDR33BX223BKSS-T&R Capacitor, ceramic, 0.022 uF, +/-10% Tol, 100V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

BX1210

Contextual Info: CDR33BX393AKSS aka CDR33BX393AKSS CDR33BX393AKSS Capacitor, ceramic, 0.039 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer: Capacitance:

Contextual Info: KEMET Part Number: C1210N563K5XSL[W] C1210N563K5XSL[W], C1210N563K5XSL[W]-MILITARYBULK, CDR33BX563AKWS Capacitor, ceramic, 0.056 uF, +/-10% Tol, 50V, BX, 1210 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size:

Contextual Info: C1210N823K5XSH7189 aka C1210N823K5XSH7189 CDR33BX823AKSS-T&R Capacitor, ceramic, 0.082 uF, +/-10% Tol, 50V, BX, 1210 Dimensions mm Specifications ID Dimension Tolerance T L W 1.5 3.2 2.5 +0.3 +0.85/-0.25 +0.55/-0.25 2006-2012 IntelliData.net Manufacturer:

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

LT3973-3.3

Abstract: CDR01-CDR06 C1206 KEMET packaging PEF55801VV1.3 CDR05BX823BKW CDR31-CDR35 MIL-PRF-55681 kemet 31G-4 CDR02 LT1432-3.3
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 KEMET CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”

MIL-PRF-55681

Abstract: C180 cdr01 capacitors kemet capacitor c1206 CDR02 CDR03 CDR31 CDR32 CDR33 CDR01-CDR06
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930

Contextual Info: CDR-MIL-PRF-55681 www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR FEATURES • Military qualified products • Federal stock control number, CAGE CODE SHV71 • High reliability tested per MIL-PRF-55681

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of