CD 100 TRANSISTOR Search Results

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

2n3054

Abstract: 40349
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

MAX3274

Abstract: MAX3274UGE MAX3275
Contextual Info: 19-2375; Rev 1; 7/03 Dual-Rate Fibre Channel Limiting Amplifier Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in a 100Ω Output Termination

Contextual Info: 19-2375; Rev 1; 7/03 Dual-Rate Fibre Channel Limiting Amplifier Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in a 100Ω Output Termination

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

2N3902

Contextual Info: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

MAX3274

Abstract: MAX3274UGE MAX3275 MAX3276 MAX3276UGE
Contextual Info: 19-2375; Rev 0; 4/02 Dual-Rate Fibre Channel Limiting Amplifiers Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in 100Ω and 150Ω Output Terminations

TRANSistor BC108

Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100

BC16

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100

TIP519

Contextual Info: TYPES TIP519, TIP520 P-N-P SILICON POWER TRANSISTORS CD H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C < r *o r m m w 150 V Min V BR CEO -M 8-A Rated Continuous Collector Current ll o 50 Watts at 100°C Case Temperature od r- -o Min fy of 40 MHz at 5 V , 1 A

C1996

Abstract: PC87415 VCG100A
Contextual Info: March 1996 PC87415 PCI-IDE DMA Master Mode Interface Controller 1 0 General Description 2 0 Features The Enhanced PCI-IDE Interface is a single-chip controller packaged in a 100-pin PQFP It provides 2 IDE channels for interfacing up to 4 IDE drives or 2 IDE drives and CD-ROM

D4001BC

Abstract: D4002BC 4001BC 92CS-24322 IC CD4002B
Contextual Info: A R R C D 4001B , C D 4002B , CD 4 0 25 B Types IS CMOS NOR Gates Features: • Propagation delay time = 60 ns typ. at C|_ = 5 0 p F , V d d = 1 0 V ■ Buffered inputs and outputs ■ Standardized symmetrical output characteristics ■ 100% tested for maximum quiescent current at 20 V

2N698

Abstract: cd 4011 be 2n657 to39 2N1990
Contextual Info: JEDEC TRANSISTORS continued @ > 'S u u > u <J > a LLl 1< _E c Ë Ul u_ _c 60 100 (40) (40) 30/90 30/90 20/60 40/120 200 200 150 150 60 20/60 40/120 40/120 40/120 40/120 150 150 150 150 150 150 150 150 10 30 X CD u. > < j= _o CL X eg E </> UJ o > X CO S o

Contextual Info: ¡2 H A R R I S CD 4541B Types CMOS Programmable Timer H ig h -V o lta g e T ypes 20-V olt Rating F e a tu re s: • Low sym m etrical ou tput resistance, typica lly 100Q at I'od = 15 V ■ B uilt-in low -pow er RC oscillator ■ O scillator frequency range: DC to 100 kHz

BC107

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

FR-BSF01

Abstract: FR-D740-012 filter FR-ASF-H FR-D720S FR-D720 FR-D740-036-EC FR-D740-022 FR-BiF FR-D740-036 FR-D740-080
Contextual Info: D700_EC_Guideline_ib0600352ENG.book 1 ページ ２００８年４月１０日 木曜日 午後２時６分 INVERTER FR-D700 INSTALLATION GUIDELINE FR-D740-012 to 160-EC FR-D720S-008 to 100-EC Thank you for choosing this Mitsubishi Inverter. Please read through this Installation Guideline and a CD-ROM enclosed to operate this inverter correctly.

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

transistor bcy70

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 Max VcE sat at 60 30 !c Ib h FE Min. Max. 50 250 Continued Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MH z mA 150 100

2N1131

Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60

CD 5888 CB

Abstract: cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888
Contextual Info: PRELIMINARY DATA SHEET UPA831TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package Outline TS06 (Top View) Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA