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2N158 Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.	Original	PDF	19500/24D 19500/24c CCU51DERED 2N158 germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power

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2N158

Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.

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19500/24D 19500/24c CCU51DERED 2N158 germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power