CBS 922 Search Results

Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

ALC020001

Abstract: ALC020002 ALC020003 ALC020004 ALC02004 MB86687A CBS 922
Contextual Info: Deviation List MB86687A Adaptation Layer Controller ALC September 1996 Version 6.0 FML/NPD/ALC/DL/1275 Identification Number ALC020001 Device MB86687A Adaptation Layer Controller ALC Category Rx Message Mode Buffer Allocation Summary If the last cell of an AAL5 packet is received with no data (i.e. pad and trailer) then a

FUJITSU mosfet

Abstract: sawtooth F9906 FPT-16P-M05 MB3789 MB3789PFV VT100
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27211-3E ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal.

F9906

Abstract: FPT-16P-M05 MB3789 MB3789PFV VT100
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-27211-3E ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal.

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

MB8516

Contextual Info: MEMORY Registered 16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516SR72CA-102/-103/-102L/-103L 168-pin, 4 Clock, 1-bank, based on 16 M x 4 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516SR72CA is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • OUTLINE DIMENSIONS Units HIGH POWER GAIN: 7 dB TYP at 12 GHz • NE721S01 PACKAGE OUTLINE S01 HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • • Lg = 0.8 [im , Wg = 330 (im LOW PHASE NOISE: -110 dBc/Hz TYP at 11 GHz

x band GaAs MESFET 261

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES_ • Units in mm HIGH POWER GAIN: PACKAGE OUTLINE S01 HIGH OUTPUT POWER: • Lg = 0.8 nm, W g = 330 nm • OUTLINE DIMENSIONS 7 dB TYP at 12 GHz • • NE72is o i 15 dBm TYP at 12 GHz

NE721S01

Abstract: NE721S01-T1B x-band microwave fet
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 2.0 ± 0.2 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2. • LG = 0.8 µm, WG = 330 µm 1 ± 2 0. • LOW PHASE NOISE:

NE721S01

Abstract: nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 1 ± DESCRIPTION

LTA 703 S

Abstract: EM 408 gps beta e 555
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:

Contextual Info: MEMORY Unbuffered 2 M x 72 BIT . S ’ f N C H I R O N O U ! D ' V N IAI M I C R A M D I M M OC Ml M l B 8 5 0 2 'S 0 7 2 F v 1 0 0 I W ll 1 4 /-W - H - - - =- - - - - - - = -' 168-pin, 4 Clock, 1-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION

Contextual Info: MEMORY Unbuffered 2 M x 72 BIT SYNCHRONOUS DYNA MB8502S072AG-100/-84/-67 168-pin, 4 Clock, 1-bank, based on 2 M x 8 Bit SDRAMs with SPD DESCRIPTION The Fujitsu MB8502S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of nine M B81117822A devices which organized as two banks of 2 M x 8 bits and a

Contextual Info: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM

Contextual Info: MEMORY 16 M x 7 2 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516S072AG-100/-84/-67/-100L/-84L/-67L 168-pin, 4 Clock, 2-bank, based on 8 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: MEMORY Unbuffered *4, k f ì - - m MlÎR.5FUS072* o 4 M x 72 BIT .s>rNCHR!ONC Ui DYINA kM DIMM 100/- 84/-67. ^ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: MEMORY Unbuffered 8 M x 72 BIT o o rr •Nili . SY N -/ill S D Y N A Ml C R M DI IVIM EElBIBBSSSi*072A(V 100/-84/-Ê¡7/-100LMÎ4L/-6 UfE: 168-pin, 4 Clock, 1-bank, based on 8 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8508S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: MEMORY Unbuffered 2 M x 72 BIT .s> 'N RONOU SDYNIAMIC RAM CIIMM Ml ¡02¡S072BZ-75/-10;2h 10. # • ’’’ .1 ” 1 m w i E \ v , v , ,v ,\W v , T l r , v , v , v , v , v , v , v , v , v , v , v , v ,v , v , v , v , v , v , v , v , v , v , v , \ \ \ \ \ \

MB814400A-70L

Abstract: mbs14
Contextual Info: June 1992 Edition 1.0 FUJITSU DATA SHEET MB8144ÛOA-60U-70U-80L CMOS 1M X 4 BIT FAST PAGE MODE LOW POWER DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Low Power Dynamic RAM The Fujitsu MB814400A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of

str F 6256

Abstract: bridge 3417 str g 6551 66212 D4413
Contextual Info: Main Worldwide Sales Offices America's Headquarters & Western United States TelCom Semiconductor, Inc. 1300 Terra Bella Avenue Mountain View, CA 94043-1836 Shipping & Mailing P.O. Box 7267 Mountain View, CA 94039-7267 Tel: (650) 968-9241 Fax: (650) 967-1590

ECS CBS 922

Abstract: MB86687A SQFP208 v2 tpr4 MB86680
Contextual Info: April 1996 Edition 2.0 DATA SHEET MB86687A Adaptation Layer Controller ALC Adaptation Layer Controller The FUJITSU MB86687A is an ATM protocol controller which autonomously terminates ATM Adaptation Layer standards Type 3/4 and Type 5. The device is ideally suited

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

nas 1791

Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
Contextual Info: ' — INTEGRATED CIRCUIT T08H IBA cmcs d ;c ;ta_ in teg r a te : TC 3 5 1 9 0 F T E C H N IC A L D A T A TC35190F SILICON V i d e o - d a t a C o e o r e s s l o n and E » p a n * l o n C o n t r o l l e r * of video-data ( VCEC 1988-11*03 . . . DESCRIPTION

6ES7307-1EA00-0AA0

Abstract: schematic diagram offline UPS MINIATURE CIRCUIT BREAKER siemens SIEMENS, SITOP Power 40, 6EP1437-2BA10 schematic diagram online UPS siemens sitop power 40 siemens sitop power 20 6ep1436 3ba00 schematic diagram ac-dc welding inverter CIRCUIT Wiring Diagram s7-300 siemens Simoreg K 6RA22
Contextual Info: Catalog KT 10.1 • 2004 Catalog KT 10.1 • 2004 SITOP Power supplies The information provided in this catalog contains descriptions or characteristics of performance which in case of actual use do not always apply as described or which may change as a result of