CASCODE SMPS Search Results

ignition driver

Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

HV cascode smps

Abstract: JESD97 STC05DE120HV
Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

HV cascode smps

Abstract: C06IE170HV JESD97 STC06IE170HV
Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

ESBT

Abstract: AN1699 STL12IE90 AN-1699
Contextual Info: AN1699 APPLICATION NOTE EFFICIENT DRIVING NETWORK FOR ESBT IN FORWARD TOPOLOGY SMPS S.Buonomo, L.Difalco & R.Scollo 1. THE CLASSICAL DRIVING CIRCUIT The ESBT Emitter Switching Bipolar Transistor configuration consists of a High Voltage Bipolar Transistor and a Low Voltage Power Mosfet in Cascode topology, as shown in figure 1.

JESD97

Abstract: P12IE95F4 STP12IE95F4 o811
Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

HV cascode smps

Abstract: STC05DE120HV JESD97 flyback smps c05de
Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

STC04IE170HV

Abstract: C04IE170HV JESD97 2a 280
Contextual Info: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

C08IE150HV

Abstract: JESD97 STC08IE150HV ESBT
Contextual Info: STC08IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 8 A - 0.10 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

sepic pfc

Abstract: C05IE150HP JESD97 STC05IE150HP
Contextual Info: STC05IE150HP Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

hv 102 st

Abstract: C08IE120HV
Contextual Info: STC08IE120HV Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz

STC04IE170HV

Abstract: C04IE170HV JESD97 C04IE17 forward smps
Contextual Info: STC04IE170HV Emitter Switched Bipolar Transistor ESBT 1700 V - 4 A - 0.15 Ω Features DATA BRIEF VCS ON IC RCS(ON) 0.6 V 4A 0.15 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

C05IE150HV

Abstract: JESD97 STC05IE150HV sepic pfc l33p
Contextual Info: STC05IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

STC04IE170HV

Abstract: C04IE170HV JESD97
Contextual Info: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. • General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

emitter switched bipolar transistor

Abstract: C12IE90HV JESD97 STC12IE90HV
Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

emitter switched bipolar transistor

Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

P12IE95F4

Abstract: STP12IE95F4 JESD97
Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

Contextual Info: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz

C04IE170HP

Abstract: STC04IE170HP
Contextual Info: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz

Contextual Info: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

C08IE150HV

Abstract: JESD97 STC08IE150HV HV cascode smps
Contextual Info: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

marking code stmicroelectronics

Abstract: emitter switched bipolar transistor Part Marking STMicroelectronics STC05DE150 flyback smps S-550 equivalent TO247-4L STMicroelectronics marking code date SMPS IC 2005 Marking STMicroelectronics
Contextual Info: STC05DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 W DATA BRIEF Figure 1: Package Table 1: General Features n n n n n VCS ON IC RCS(ON) 0.5 V 5A 0.01 W HIGH VOLTAGE / LOW CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE