TANTALUM capacitor 685 35K
Abstract: 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X
Text: TANTALUM DIPPED / RADIAL — POLAR KEMET PERFORMANCE CHARACTERISTICS • CAPACITANCE/VOLTAGE RANGE: T35X/T39X: 0.1-680µF, 3-50 Volts. T36X: 0.1-330µF, 6-50 Volts. • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10%
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T35X/T39X:
035AS
TANTALUM capacitor 685 35K
685 35K
MIL-STD-127
T36X
KEMET T355
capacitor a475
T350
f5653
RS-468
T35X
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298W
Abstract: No abstract text available
Text: 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded FEATURES • • • • • Highest capacitance-voltage product in industry Mounting: Surface mount Small sizes include 0603 and 0402 footprint Lead Pb -free L-shaped terminations
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EIA-481
2002/95/EC
11-Mar-11
298W
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106 16k
Abstract: 685k 35K capacitor L336 a684 transistor 335 35K a564 transistor J476 b475 capacitor C475 E106 capacitor
Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for
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050AS
106 16k
685k 35K capacitor
L336
a684 transistor
335 35K
a564 transistor
J476
b475
capacitor C475
E106 capacitor
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cx 20015 a
Abstract: dipped tantalum capacitor markings 335 35K CX02 capacitor B1253 J476 k337 T35X TANTALUM DIPPED / RADIAL - POLAR T368
Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for
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C-7301
C-7301/7303
cx 20015 a
dipped tantalum capacitor markings
335 35K
CX02 capacitor
B1253
J476
k337
T35X
TANTALUM DIPPED / RADIAL - POLAR
T368
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a564 transistor
Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for
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C-7301
C-7301/7303
a564 transistor
a124
335 35K
c3953
cx 20015 a
a335
a684 transistor
transistor a564
K277
capacitor 106 35K
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a564 transistor
Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for
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298W
Abstract: No abstract text available
Text: 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded FEATURES • • • • • Highest capacitance-voltage product in industry Mounting: Surface mount Small sizes include 0603 and 0402 footprint Lead Pb -free L-shaped terminations
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Original
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PDF
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EIA-481
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
298W
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298W107X0010Q2T
Abstract: 298W 0402 footprint
Text: 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded FEATURES • • • • • Highest capacitance-voltage product in industry Mounting: Surface mount Small sizes include 0603 and 0402 footprint Lead Pb -free L-shaped face-down terminations
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EIA-481
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
298W107X0010Q2T
298W
0402 footprint
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optocoupler H-BRIDGE
Abstract: J107 DIODE SMP25N06 mospower applications handbook SI9950DY SMW14N50F SMP20P10 SMP30N10 si9950 SMP8N50F
Text: AN706 Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device’s gate capacitance Ciss is sufficiently low, they may be
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AN706
D469A
D469A
optocoupler H-BRIDGE
J107 DIODE
SMP25N06
mospower applications handbook
SI9950DY
SMW14N50F
SMP20P10
SMP30N10
si9950
SMP8N50F
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298W
Abstract: No abstract text available
Text: 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded FEATURES • • • • • Highest capacitance-voltage product in industry Mounting: Surface mount Small sizes include 0603 and 0402 footprint Lead Pb -free L-shaped face-down terminations
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Original
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PDF
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EIA-481
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
298W
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40153
Abstract: 298W
Text: 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded FEATURES • • • • • Highest capacitance-voltage product in industry Mounting: Surface mount Small sizes include 0603 and 0402 footprint Lead Pb -free L-shaped face-down terminations
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PDF
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EIA-481
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
40153
298W
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optocoupler H-BRIDGE
Abstract: Si9950DY SMP25N06 mospower applications handbook SMP20P10 J107 DIODE SMP40N10 AN706 CR100 Siliconix JFET application note
Text: AN706 Siliconix Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device's gate capacitance Ciss is sufficiently low, they may be
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AN706
D469A
optocoupler H-BRIDGE
Si9950DY
SMP25N06
mospower applications handbook
SMP20P10
J107 DIODE
SMP40N10
AN706
CR100
Siliconix JFET application note
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a564 transistor
Abstract: a684 transistor 106 16k transistor a564 685k 35K capacitor a684 d1863 e225 capacitor B565 J476
Text: TANTALUM DIPPED / RADIAL — POLAR KEMET PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for
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050AS
a564 transistor
a684 transistor
106 16k
transistor a564
685k 35K capacitor
a684
d1863
e225 capacitor
B565
J476
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panasonic c5904
Abstract: L9741 H9730 h9745 H-9730 l9742 D790011 H9718 h9723 SLG84435
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN H ENG APPD DESCRIPTION OF CHANGE 468168 PRODUCTION RELEASED
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U9760
74LC125
R9742
1/16W
C9745
C9742
panasonic c5904
L9741
H9730
h9745
H-9730
l9742
D790011
H9718
h9723
SLG84435
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Diode j106
Abstract: J106 Capacitance j107 j105 transistor J107 diode j107 j105 J107 diode NDSJ105
Text: J105 J106 J107 NDSJ105 G D G S TO-92 S SOT-23 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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NDSJ105
OT-23
Diode j106
J106
Capacitance j107
j105 transistor
J107
diode j107
j105
J107 diode
NDSJ105
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J106
Abstract: J105 J107 Diode j106 diode j107 j105 transistor J107 diode JFTJ105
Text: J105 J106 J107 JFTJ105 G D G G TO-92 S D SOT-223 S N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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JFTJ105
OT-223
J106
J105
J107
Diode j106
diode j107
j105 transistor
J107 diode
JFTJ105
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Untitled
Abstract: No abstract text available
Text: J105 / J106 / J107 / JFTJ105 J105 J106 J107 JFTJ105 G G S S SOT-223 TO-92 G D NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.
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JFTJ105
OT-223
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j105 transistor
Abstract: diode j107 J106 J107 diode J105 J107
Text: J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D D D D
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J105/106/107
S-04028--Rev.
04-Jun-01
j105 transistor
diode j107
J106
J107 diode
J105
J107
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j105
Abstract: PW 1.5 Siliconix JFET N-Channel JFET Vgs(off) Siliconix N-Channel JFETs J106 J107 diode pa 4010 J107
Text: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D
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J105/106/107
J105/106/107
P-37408--Rev.
04-Jul-94
j105
PW 1.5
Siliconix JFET
N-Channel JFET Vgs(off)
Siliconix N-Channel JFETs
J106
J107 diode
pa 4010
J107
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Untitled
Abstract: No abstract text available
Text: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D
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J105/106/107
J105/106/107
P-37408--Rev.
04-Jul-94
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J106
Abstract: J105 J107
Text: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D
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J105/106/107
O-226
P-37408--Rev.
04-Jul-94
J106
J105
J107
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J476
Abstract: t35x f5653 K187
Text: TA N TA L U M D IP P E D / R A D IA L — P O L A R PERFORMANCE CHARACTERISTICS CAPACITANCE TOLERANCE: Available in stan dard El A nominal values with ±20% and ±10% standard. DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number list
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OCR Scan
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PDF
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T35X/T39X
1-680nF,
S122b77
J476
t35x
f5653
K187
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j105
Abstract: JFET J105
Text: J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY v G S o ff (V) r D S (o n ) Max (£2) 'D ( o ff) Typ (pA) toN Typ (ns) J105 -4 .5 t o -1 0 3 10 14 J106 -2 to -6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 FEATURES BENEFITS APPLICATIONS • • •
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OCR Scan
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PDF
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J105/106/107
J105/106/107
S-04028--
04-Jun-01
04-Jun-01
j105
JFET J105
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j107
Abstract: Capacitance j107 J105 j106
Text: Semiconductor“ J105 J106 J107 NDSJ105 SOT-23 s N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25CC unless otherwise noted
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OCR Scan
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PDF
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NDSJ105
OT-23
maximu0040
bSD113G
j107
Capacitance j107
J105
j106
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