GB01SHT12-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB01SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *
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GB01SHT12-CAL
GB01SHT12-CAL.
05-SEP-2013
GB01Semperature
GB01SHT12
88E-18
90E-11
00E-10
GB01SHT12-CAL SPICE
high-temperature-sic-bare-die
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GB01SHT06-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB01SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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GB01SHT06-CAL
GB01SHT06-CAL.
05-SEP-2013
GB01SHT06
57E-18
40E-05
12E-11
00E-10
GB01SHT06-CAL SPICE
high-temperature-sic-bare-die
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GB05SHT06-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB05SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013
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GB05SHT06-CAL
GB05SHT06-CAL.
05-SEP-2013
GB05SHT06
99E-17
87E-05
38E-10
00E-10
GB05SHT06-CAL SPICE
high-temperature-sic-bare-die
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GB20SHT06-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB20SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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GB20SHT06-CAL
GB20SHT06-CAL.
05-SEP-2013
GB20SHT0ODE
GB20SHT06
46E-17
00E-05
26E-09
GB20SHT06-CAL SPICE
high-temperature-sic-bare-die
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GB05SHT12-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB05SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *
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GB05SHT12-CAL
GB05SHT12-CAL.
05-SEP-2013
GB05Smperature
GB05SHT12
45E-15
00E-10
GB05SHT12-CAL SPICE
high-temperature-sic-bare-die
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GAP3SHT33-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GAP3SHT33-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SHT33-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * *
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GAP3SHT33-CAL
GAP3SHT33-CAL.
04-SEP-2013
GAP3SHT33
39E-14
01E-11
00E-10
00E-03
GAP3SHT33-CAL SPICE
high-temperature-sic-bare-die
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GB20SHT12-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *
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GB20SHT12-CAL
GB20SHT12-CAL.
05-SEP-2013
GB20SATHODE
GB20SHT12
74E-13
68E-5
15E-09
GB20SHT12-CAL SPICE
high-temperature-sic-bare-die
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U820 diode
Abstract: LP2985A-10 DALE R005 diode u820 diode c820
Text: User's Guide SBOU089 – August 2010 Multi-Cal-Master Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-Master evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document
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SBOU089
U820 diode
LP2985A-10
DALE R005
diode u820
diode c820
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U820 diode
Abstract: dale R003 LP2985A-10 DALE R005
Text: User's Guide SBOU094 – September 2010 Multi-Cal-Slave Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-Slave evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document
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SBOU094
U820 diode
dale R003
LP2985A-10
DALE R005
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LM95221
Abstract: ADC083000 ADC08B3000 ADC08D1500
Text: National Semiconductor Application Note 1727 Robbie Shergill March 6, 2008 1.0 Introduction The user does this by holding the CAL pin high during powerup and keeping it high for as long a delay as desired. The device will wait until the CAL pin is cycled low and then high
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AN-1727
LM95221
ADC083000
ADC08B3000
ADC08D1500
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LP2985A-10
Abstract: R707 U820 diode PTC C970
Text: User's Guide SBOU087A – August 2010 – Revised April 2011 Multi-Cal-System Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-System evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document
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SBOU087A
LP2985A-10
R707
U820 diode
PTC C970
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB05SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features • 1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB05SHT12-CAL
TEMP-24)
GB05SHT12
45E-15
00E-10
00E-03
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB10SLT06-CAL Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB10SLT06-CAL
GB10SLT06-CAL
GB10SLT06
55E-15
71739E-05
40E-10
00E-10
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB20SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB20SHT06-CAL
CharacteristiSHT06
GB05SHT06
46E-17
00E-05
26E-09
00E-10
00E-03
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features • 1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB01SHT12-CAL
TEMP-24)
GB01SHT12
88E-18
90E-11
00E-10
00E-03
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GAP05SLT80-CAL Silicon Carbide Power Schottky Diode Chip Features • 8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds
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GAP05SLT80-CAL
GAP05SLT80-CAL
GAP05SLT80
TEMP-24)
067E-15
39E-6
838E-12
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB01SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB01SHT06-CAL
Characteristics01SHT06
GB01SHT06
57E-18
40E-05
12E-11
00E-10
00E-03
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GA01PNS100-CAL Silicon Carbide PiN Diode Chip Features • 10 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Advantages
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GA01PNS100-CAL
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB05SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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Original
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GB05SHT06-CAL
GB05SHT06
99E-17
87E-05
38E-10
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB02SLT06-CAL Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB02SLT06-CAL
GB02SLT06-CAL
GB02SLT06
GB02SLT06
05E-15
3E-05
61E-10
00E-10
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GA01PNS80-CAL Silicon Carbide PiN Diode Chip Features • 8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Advantages
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GA01PNS80-CAL
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SKiiP 33 NEC 125 To
Abstract: semikron skiip 33 NEC 125 skiip 33 nec 125 t semikron ASIC SKIC semikron skiip 33 nec Semikron Semitop sk 70 kq 12 skiip 11 nec 06 1 Semikron Semitop sk 45 kq 12 MiniSKiiP 8 semikron skiip 33
Text: MiniSKiiP Technologie Druckkontakte bei allen Leistungs- und Hilfsanschlüssen anstelle von Lötverbindungen. Integration der neuesten Chiptechnologie: • • • • Niedrige Schaltverluste bei 600 V oder 1200 V, homogene NPT IGBTs mit antiparallel geschalteten CAL-Dioden
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Semikron skiip 22 nab 12
Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Text: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0
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OCR Scan
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IEC-801-4
Abstract: diode zener 22A
Text: SEM ICONDUCTOR SMAJ22A TECHNI CAL DATA Surface M ount TVS Diode Features • Plastic package has underwriters laboratory flammability classification 94V-0. • Optimized for LAN protection applications. • Ideal for ESD protection o f data lines in accordance
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IEC801-2)
IEC1000-4-4
IEC801-4)
SMAJ22A
10/1000us
IEC-801-4
diode zener 22A
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