Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 C945LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A
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OT-23
OT-23
C945LT1
310mA
30MHz
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Untitled
Abstract: No abstract text available
Text: C945LT1 NPN * “G” Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT 150 -
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C945LT1
C945LT1
10mAdc)
310mA)
-10mAdc,
OT-23
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C945LT1
Abstract: C945L
Text: SOT-23 Plastic-Encapsulate Transistors SOT—23 C945LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current
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Original
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OT-23
OT--23
C945LT1
30MHz
037TPY
950TPY
550REF
022REF
C945LT1
C945L
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C945LT1
Abstract: C945L c945
Text: C945LT1 NPN Transistors P b Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT
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Original
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C945LT1
C945LT1
10mAdc)
310mA)
-10mAdc,
OT-23
C945L
c945
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PDF
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C945L
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 C945LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range
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Original
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OT-23
OT-23
C945LT1
310mA
30MHz
C945L
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PDF
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C945LT1
Abstract: C945L
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 C945LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation
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Original
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OT-23
OT--23
C945LT1
500mA
30MHz
037TPY
950TPY
550REF
022REF
C945LT1
C945L
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PDF
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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C945LT1
Abstract: C945L LE310
Text: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ C 945LT1 TR AN SISTO R N PN 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Pow er dissipation PcM: 0.2 W (Tamb=25"C ) C ollector current ICM: 0 .1 5 A C ollector-base voltage V(BR)CBO: 6 0 V Operating and storage junction temperature range
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OCR Scan
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OT-23
945LT1
C945LT1
C945LT1
C945L
LE310
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