C8V DIODE Search Results

diode V149

Abstract: v149 v149 diode KDV149 1012 Ir v149+8m+diode
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV149 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AM RADIO BAND TUNING APPLICATION. FEATURES • High Capacitance Ratio : Civ/C8v=19.5 Typ. . • High Q : Q=200(Min.). • Small Package. • Low Voltage Operation. : 1V —8V.

diode V149

Abstract: v149 KDV149 v149 diode
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDV149 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AM RADIO BAND TUNING APPLICATION. FEATURES • • • • High Capacitance Ratio : Civ/C8v=19.5 Typ. . High Q : Q=200(Min.). Small Package.

KDV149

Abstract: C1-62 c5v diode diode 7.52
Contextual Info: KDV149 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA AM RADIO BAND TUNING APPLICATION. B A FEATURES ᴌHigh Capacitance Ratio : C1V/C8V=19.5 Typ. . O F ᴌHigh Q : Q=200(Min.). H ᴌSmall Package. M G ᴌLow Voltage Operation. : 1Vᴕ8V.

Contextual Info: *High 0: 0=200 lvlin *High Capacitance Ratio :C1 V/C8V=15(Min); *Low Voltage Operation : 1-8 V; *Small Package. Package: TO-92 ABSOLUTE MAXIMUM RATINGS at Tan*=25U Characteristic Symbol Rating; Continuous Reverse Voltage Storage Temperature VR Tstg 15 -55-150

Contextual Info: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: TO SH IBA HN1V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE H N1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: TO SH IBA HN2V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 3.1 ±0 .2 □8 C'JCO to 7 to ÖÖ + 1 6 3 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . VHF HYPERABRUPT TUNING DIODES LV2001 A - LV2002(A) Ct TYPE NUMBER LV2001 LV2001A LV2002 LV2002A TYPE NUMBER LV2201 LV2201A LV2202 LV2202A TYPE NUMBER LV2301 LV2301A LV2302 LV2302A TYPE NUMBER LV2401 LV2401A LV2402

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 228 Unit in ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance

1SV149

Contextual Info: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V

1SV228

Contextual Info: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)

1SV147

Contextual Info: 1SV 147 TO SHIBA 1 S V 1 47 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rs : rs = 0.30 Typ. Small Package q 5 5 MAX. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV147

Abstract: toshiba lable
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV147 U nit in mm FM R A D IO B A N D T U N IN G A PP LIC A T IO N S . • • Low rs : rs = 0.3a Typ. Small Package M A X IM U M R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Tem perature

1SV228

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 228 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • + 0.5 2 .5 - 0.3 + 0.25 1. 5 - 0.15 Low rs : rs = 0.30 Typ. Small Package H- M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

KV1226

Abstract: KV1236Z KV1235Z KV1225 KV1236 KV1320 KV1260 KV1235 KV1310 KV1330A-2
Contextual Info: TOKO AMERICA INC D E .J cIDt>7Li32 □ 1 4 34 } VARjABLE^CAPACLTANCE^DiODES. — ' 9 0 6 7 6 3 2 T O K O A M E R I C A INC Variable Capacitance Diodes for AM KV1250 KV1260 • # KV1260-2 <* KV1230Z KV1235Z KV1234Z KV1236Z KV1225 KV1226 ♦ ■ KV1260M KV1560

c8v sot

Abstract: KDV152S
Contextual Info: KDV152S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO for CB, C/P PLL APPLICATION. FEATURES E B L ᴌLow Series Resistance : rS=0.3 Typ. . L 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ) UNIT VR 15 V

KDV804M

Abstract: KDV804S w5fe kec marking SOT
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDV804M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. KDV804M FEATURES MILLIMETERS • Low Series Resistance : rs=0.3 TYP. .

SOT-23-hg

Abstract: MARKING k3 SOT-23 SOT-23hg
Contextual Info: KDV804M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. A B FEATURES O F Low Series Resistance : rs=0.3 TYP. . Small Package : SOT-23.

lm 8712

Abstract: LM 4741 1SV149
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1 S V 1 4 9 U n it in m m A M RADIO BAND TUNING APPLICATIONS, • H igh C apacitance Ratio : C i v / C 8V = 15 Min. • H igh Q : Q = 200 (Min.) • Sm all Package • Low V oltage O peration : 1V-8V

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV804M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. FEATURES ・Low Series Resistance : rs=0.3 TYP. . ・Small Package : SOT-23.

KDV152S

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV152S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO for CB, C/P PLL APPLICATION. FEATURES • Low Series Resistance : rs=0.3 Typ. . • Small Package. DIM MILLIMETERS A B 1.30+0.20/—0.15 2.93Ì0.20 C 1.30 MAX

Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Varactor Diode 1 Anode 2 Anode 3 Cathode 变容二极管 FHV804 MAXIMUM RATINGS(Ta=25℃) 最大额定值