C848 Search Results

TRANSISTOR D882

Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics

Contextual Info: Digital CCD camera C8484-16C FEATURES High sensitivity in UV region Quantum efficiency : 40 % at 200 nm, 30 % at 250 nm Extremely high resolution with 1344 x 1024 pixels/small pixel size (4.65 m) Progressive scan interline readout with no mechanical shutter

Contextual Info: デジタルCCDカメラ C8484-16C C8484-16Cは130 万画素の全画素読み出しインター ラインCCDを採用した高解像度・高感度デジタルCCDカメ ラです。 200 nmを下まわる紫外から近赤外の幅広い波長領域で

D882 TRANSISTOR PIN

Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics

83C166-5M-T4

Abstract: SAB-C167-LM 80C166W-MT3 80C166M Q67121-C848 80C166-M-T3 Q67121-C900 83C166-5M SAF-C167-LM Q67121-C836
Contextual Info: Mikrocontroller Bausteine Microcontroller Components 16-Bit Single-Chip Mikrocontroller 16-Bit Single-Chip Microcontrollers Typ Type Bestellnummer Ordering Code Gehäuse Package Beschreibung Description SAB 80C166-M Q67121-C848 P-MQFP-100-2 wie SAB 83C166-5M, ROMlos, 20 MHz

S3C848A

Abstract: S3P848A S3C848 FM24653 ISO-14001 lcd t-con circuit P8-48 c848a
Contextual Info: C8489/C848A/P848A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 C8489/C848A/P848A i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

BTB1424N3

Abstract: BTD2150N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2006.10.25 Page No. : 1/5 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics

D882 q

Abstract: D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics

S3C848

Abstract: S3C848A S3P848A C848A FM24653 ISO-14001
Contextual Info: C8489/C848A/P848A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 C8489/C848A/P848A i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

BTB1424AD3

Abstract: BTD2150AD3 d2150a
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.04.20 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics

BTB772AM3

Abstract: BTD882AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics

D882 TRANSISTOR PIN

Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A

d2150a

Abstract: TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics

D2150

Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

Contextual Info: Digital CCD camera C8484-05C SPECTRAL RESPONSE * This is typical, not guaranteed. Quantum efficiency % 80 70 60 50 40 30 20 10 The C8484-05C is a high-resolution digital camera using a progressive scan interline CCD with no mechanical shutter. In addition to a high resolution of 1.37 million pixels, a wide

BTB1424AM3

Abstract: BTD2150AM3
Contextual Info: Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2005.10.04 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 Features • Low VCE sat , VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA • Excellent current gain characteristics

Contextual Info: High Performance UV Digital Camera C8484-16C * Quantum efficiency % 40 30 20 10 200 The C8484-16C is a new UV CCD digital camera using an advanced 1/2 inch progressive scan interline CCD chip with high sensitivity in the UV region while offering substantially better

d1760

Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A

Contextual Info: デジタルCCDカメラ C8484-05C C8484-05Cは137万画素の全画素読み出しインター 特 長 ラインCCDを採用した高解像度・高感度デジタルCCDカ メラです。 137 万画素の高解像度 メカニカルシャッタを必要とせず、広いダイナミックレ

D882S

Abstract: TRANSISTOR D882S NPN transistor ECB TO-92 BTB772SA3 BTD882SA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics

D2150

Abstract: d2150a BTD2150AT3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AT3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics

D2150

Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

BTB1424L3

Abstract: BTD2150L3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2204.11.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics

D1864

Abstract: BTD1864I3 BTB1243I3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features • Low VCE sat • Excellent current gain characteristics • Complementary to BTB1243I3