C70I Search Results

P55i

Abstract: HY29F040A P12-I
Contextual Info: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands

SCR 2000V 1000A

Abstract: GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L
Contextual Info: N l û E CO/ STATIC PUR CMPNT 3ME » 3074504 GDDG1G3 1 • ù E S P High Power 53m m Silicon Controlled Rsctifier GE-SPCO S ta tic Pntoer C nm nonent O peration fifnlnem .P A USA 1000 A Avg. Up To 3200 Volts "7\W\*| PG 6.052 9/1/88 [ C7 Q2 A M P L IF Y IN G G A T E

Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

P55i

Contextual Info: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and

1.25 wire to board

Abstract: BY95 JC2000
Contextual Info: S D - 5 3 7 8 0 " * * 10 NOTES 0 = 1=25 C t^ T " DWG. NO. " 5 146 S • u-^c MATES WITH : SERIES 3 film iH 1 51146 (P IT C H 4 S n n iii-b (3 ¿19 ^^)a LOCKING WINDOW :ONE PLACE FOR 2 AND 3 CIRCUIT PRODUCTS AND TWO PLACES FOR WORE THAN 3 CIRCUIT PRODUCTS.

HY29F002

Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Contextual Info: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current

KDS 9E

Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Contextual Info: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter

Contextual Info: “H Y U N D A I HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements Com patible with JEDEC-Standard Comm ands - Uses softw are com m ands, pinouts, and

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

29F040A

Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

hyundai HY29F040A

Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current