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    C5V 1 Price and Stock

    onsemi SZBZX84C5V1LT3G

    DIODE ZENER 5.1V 250MW SOT23-3
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    DigiKey SZBZX84C5V1LT3G Digi-Reel 61,625 1
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    SZBZX84C5V1LT3G Cut Tape 61,625 1
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    SZBZX84C5V1LT3G Reel 40,000 10,000
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    Flip Electronics SZBZX84C5V1LT3G 8,480
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    New Advantage Corporation SZBZX84C5V1LT3G 83,000 1
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    Vyrian SZBZX84C5V1LT3G 57,909
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    onsemi SZBZX84C5V1LT1G

    DIODE ZENER 5.1V 250MW SOT23-3
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    DigiKey SZBZX84C5V1LT1G Digi-Reel 31,200 1
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    SZBZX84C5V1LT1G Cut Tape 31,200 1
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    SZBZX84C5V1LT1G Reel 30,000 3,000
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    Newark SZBZX84C5V1LT1G Cut Tape 17,365 5
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    Bristol Electronics SZBZX84C5V1LT1G 3,000
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    TME SZBZX84C5V1LT1G 1
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    ComSIT USA SZBZX84C5V1LT1G 8,784
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    New Advantage Corporation SZBZX84C5V1LT1G 78,000 1
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    Vyrian SZBZX84C5V1LT1G 35,983
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    PanJit Group PZS52C5V1M1Q_R1_00501

    DIODE ZENER 5.1V 250MW DFN1006
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    DigiKey PZS52C5V1M1Q_R1_00501 Digi-Reel 29,880 1
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    PZS52C5V1M1Q_R1_00501 Reel 20,000 10,000
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    Vishay Semiconductors BZX85C5V1-TR

    DIODE ZENER 5.1V 1.3W DO204AL
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    DigiKey BZX85C5V1-TR Cut Tape 26,613 1
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    BZX85C5V1-TR Reel 25,000 5,000
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    Diodes Incorporated BZT52C5V1LP-7

    DIODE ZENER 5.1V 250MW 2DFN
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    DigiKey BZT52C5V1LP-7 Reel 9,000 3,000
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    Newark BZT52C5V1LP-7 Cut Tape 6,000 5
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    TME BZT52C5V1LP-7 1
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    Avnet Asia BZT52C5V1LP-7 8 Weeks 6,000
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    Vyrian BZT52C5V1LP-7 72,340
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    Win Source Electronics BZT52C5V1LP-7 6,500
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    C5V 1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C5V1 Zetex Semiconductors SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES Original PDF

    C5V 1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C100P

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.


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    KDV1470 C100P PDF

    C5VI

    Abstract: C5V1 c3v9 c5v6 C6V2 55 c5v1 BZX84 BZX84C BZX84-C18 BZX84-C27
    Text: BZX84C series CDIL SILICON PLANAR VOLTAGE REGULATOR DIODES Low pow er general purpose voltage regulator diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC _3.0_ 2.8 0.48 0.38 3 = CATHODE 0.14 3 2.6 2.4 0.60 0.40 _T02 0.89"


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    BZX84C BZX84-C3V3 BZX84-C7V5 BZX84-C18 BZX84-C43 BZX84-C27 C5VI C5V1 c3v9 c5v6 C6V2 55 c5v1 BZX84 BZX84-C18 PDF

    ltc6802g-2

    Abstract: LTC6802-2 Zener c9v zener diode c5v LTC6802G LTC6802-1 bidirectional optocoupler c5v zener diode ltc6802 LT6003
    Text: LTC6802-2 Multicell Addressable Battery Stack Monitor Features Description Measures Up to 12 Li-Ion Cells in Series 60V Max n Stackable Architecture Enables Monitoring High Voltage Battery Stacks n Individually Addressable with 4-Bit Address n 0.25% Maximum Total Measurement Error


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    LTC6802-2 44-Lead 500kbps LTC6802-1 LTC6802-2, 68022fa ltc6802g-2 LTC6802-2 Zener c9v zener diode c5v LTC6802G LTC6802-1 bidirectional optocoupler c5v zener diode ltc6802 LT6003 PDF

    LT6000

    Abstract: LTC6802-2 LTC6802-1
    Text: LTC6802-2 Multicell Addressable Battery Stack Monitor FEATURES n n n n n n n n n n n n n DESCRIPTION Measures Up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables Monitoring High Voltage Battery Stacks Individually Addressable with 4-Bit Address


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    LTC6802-2 44-Lead 500kbps LTC6802-1 LTC6802-2, 68022fa LT6000 LTC6802-2 LTC6802-1 PDF

    zener diode C5V

    Abstract: Zener c9v 3.1v to 350v ZENER DIODE LTC6802-1 c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram
    Text: Electrical Specifications Subject to Change LTC6802-1 Multicell Battery Stack Monitor FEATURES DESCRIPTION n The LTC 6802-1 is a complete battery monitoring IC that includes a 12-bit ADC, a precision voltage reference, a high voltage input multiplexer and a serial interface. Each


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    LTC6802-1 12-bit LTC6802-1 LTC6802-2 LTC6802-1, 68021p zener diode C5V Zener c9v 3.1v to 350v ZENER DIODE c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1V02H SILICON EPITAXIAL PLANAR TYPE Unit in mm AM RADIO BAND TUNING APPLICATIONS , High Capacitance Ratio : ClV/C8V=19.5 Typ. . High Q : Q=200(Min.) . Including Two Devices in FM8 Package (Flat Pack Mini 8 Pin) k i + 0.1 0.15 - 0 . 0 5 : V r =1~8V K . Lou Voltage Operation


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    HN1V02H 10flA PDF

    transistor J1c

    Abstract: No abstract text available
    Text: HN2V02H SILICON EPITAXIAL PLANAR TYPE TRANSISTOR A M R A D IO B A N D T U N IN G APPLICATIONS. • U n i t in m m • H igh C apacitance Ratio : C 1 V /C 8 V = 19.5 Typ. H igh Q : Q = 200 (Min.) Including Three Devices in FM 8 Package (F lat Pack M ini 8Pin)


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    HN2V02H transistor J1c PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. — • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)


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    HN2V02H PDF

    HN1V02H

    Abstract: No abstract text available
    Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V


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    HN1V02H HN1V02H PDF

    H123

    Abstract: MARKING D3 8pin HN2V02H
    Text: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V


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    HN2V02H H123 MARKING D3 8pin HN2V02H PDF

    PS-R50

    Abstract: PS-R-50 PSR-11 PS-R11
    Text: I l l l PICS PHOTO !C Sensors P S - R 1 1 , R 5 0 i ' H B ' t i i DIMENSIONS U nit:m m PS-R11/PS-R50 l i . g z k M x .- ?* 1% h I • f i - h ' t , 3 te flu :£ 3 1 j£ 7 :t M C c i2 > if- p - r0 771- K I C t t t 7 i h 71-— K . ^ S g 3 t i M '* - K I P < D ; f t


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    PS-R11 PS-R11/PS-R50 PS-R11 PS-R50 PS-R50 PS-R-50 PSR-11 PDF

    1300313

    Abstract: JE 13003
    Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)


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    1SV100 a55MAX. 1300313 JE 13003 PDF

    P1X2

    Abstract: No abstract text available
    Text: M 5 1 3 l« E 2 2 P / S P , 5 1 3 8 P / S P r g e b o * - ^ M 5 1 3 2 2 P /S P , M 5 X 3 2 8 P /S P ÌÌ 2 - ìji, u - zj > iÌr i-S R G B -f I # # ® 2 • m i- o - * l- fu - s - z m -i — • = M 5 1 3 2 2 P /S P i- — 7 i — X ffilC . t • T - h a i 'f J i V '- r - - 1


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)


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    HN1V01H PDF

    Untitled

    Abstract: No abstract text available
    Text: ZMM55C2V4 ~ ZMM55C100 500mW SUFACE MOUNT ZENER DIODE FEATURES • Planar Die construction MINI-MELF / LL-34 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb


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    ZMM55C2V4 ZMM55C100 500mW LL-34 MIL-STD-750, 5C100 PDF

    Untitled

    Abstract: No abstract text available
    Text: R6 VDD VDD3 VCC L3 L3 or R=0 L2 L2 or R=0 VDD L4 L4 or R=0 D3 LED + C3 220uF VREG IN L1 L2 L3 L4 VCC 1 1 VCC VDD 1 1 VDD 1 1 VDD 1 1 VCC VCC VDD VCC VDD U4 KO1 KO2 KO3 KO4 KO5 KO6 KO7 KI0 KI1 KI2 KI3 KI4 KI5 KI6 KI7 SYS_DB SYS_MI VREG VREG VDD5 VDD3 VCC VDD


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    RS232 432MHz 1N4148 pin44 220uF 1N4001 RA8806 100uF PDF

    M5M52b78

    Abstract: No abstract text available
    Text: MITSUBISHI LSI« ¿ft M5M52B78P,J-10,-12,-15 vo" rtf* ^"C V° ; « 262144-BIT 32768-WORD BY 8-BIT BiCMOS STATIC RAM DESCRIPTION TheM5M52B78 is a family of 32768-word by 8-bit static RAMs, fabricatedwith the high-performanceBiCMOS process PIN CONFIGURATION (TOP VIEW)


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    M5M52B78P 262144-BIT 32768-WORD TheM5M52B78 450mW 282144-BIT M5M52b78 PDF

    M5M5278C-25

    Abstract: M5M5278c
    Text: MITSUBISHI LS Is M5M5278CP, J-15,-20,-25,-25L M5M5278CFP-20,-25,-25L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5278C is a fam ily o f 32768-w ord by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicon' A 9 - > [T


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    M5M5278CP, M5M5278CFP-20 262144-BIT 32768-WORD 5278C 32768-w FP-25L. M5M5278C-25 M5M5278c PDF

    m5m27c256afp

    Abstract: 27C256AP m5m27c256a M5M27C256A-12 M5M27C256AP
    Text: MITSUBISHI LS Is M5M27C256AP,FP,VP,RV-12,-15 262144-BIT 32768-W0RD BY 8-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M27C256AP,FP,VP,RV are high-speed 262144-bit one time programmable read only memories. They are suitable for microprocessor programming applications


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    M5M27C256AP RV-12 262144-BIT 32768-W0RD A12A7 27C256AP m5m27c256afp m5m27c256a M5M27C256A-12 PDF

    FOOTPRINT MO-229 2X3 SOLDERING

    Abstract: C32F
    Text: CAT24C32 32-Kb I2C CMOS Serial EEPROM Description The CAT24C32 is a 32−Kb CMOS Serial EEPROM devices, internally organized as 4096 words of 8 bits each. It features a 32−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.


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    CAT24C32 32-Kb CAT24C32 CAT24C32/D FOOTPRINT MO-229 2X3 SOLDERING C32F PDF

    YMF701

    Abstract: Yamaha YM3812 YM3812 ymf289 OPL3-SA opl3 "isa bus interface" Yamaha YMF262
    Text: NEW PRODUCT NEWS YAM AHA’L S I YMF701 op£ ' OPL3-SA 1chip OPL3 Audio .System •OVERVIEW The YAMAHA YMF701 OPL3-SA is a single chip multimedia audio LSI that supports softwares written for the Sound Blaster Pro and Windows Sound System interface. The YMF701 integrates YMF262 (OPL3).


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    YMF701 YMF701 YMF262 16-bit MPU-401 YMF289 00D2LS0 Yamaha YM3812 YM3812 ymf289 OPL3-SA opl3 "isa bus interface" Yamaha YMF262 PDF

    MC14585B

    Abstract: MN4000B
    Text: CM OS Logic MN4000B Series MN4585B/MN4585BS M N4585B/M N4585BS 4 -B it Magnitude Comparators • Description The M N 4585B /S are m agnitude com parators which com pare 4-bit input data Aq ~ A 4 and Bq - B 3 . By using the M N 4585B /S, large, small or equal signals can be


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    MN4000B MN4585B/MN4585BS MN4585B/S MN4585B/S, MC14585B. 16-Pin SO-16D) MC14585B PDF

    1V02H

    Abstract: HN1V02H
    Text: HN1V02H 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 HN1V02H ○ AM チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C8V = 19.5 標準 • 性能指数が高い。 • 1 パッケージに 2 素子を内蔵しています。


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    HN1V02H 1V02H HN1V02H PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP1011 HARRIS S E M I C O N D U C T O R Power Distribution Controller A p rii 1 9 9 7 Features Description • Controls Distribution of Four Supplies: +5V, +3.3V, +12V, and -12V The HIP1011 is a power supply distribution control IC for use in modern computer systems. Along with four discrete power


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    HIP1011 HIP1011 prote006 PDF