C55V Search Results

Contextual Info: TOSHIBA T C55V2161 FTI-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The C55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16

Contextual Info: TO SHIBA C55V1001 AFI/AFTI/ATRI/ASTI/ASRI-70,-70L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The C55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TO SH IBA C55V1001 AF/AFT/ATR/AST/ASR-85,-10,-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The C55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as

B50K

Abstract: c36k
Contextual Info: Double Balanced Mixers COMMUNICATIONS BAND MIXERS ♦ ♦ ♦ ♦ ♦ Wide Range of Connection Types including SMA, Pin, Drop-In, Tab High Isolation Low Conversion Loss Quick Delivery Time Low Cost Operating Temperature Range = -55°C to +100°C Storage Temperature Range = -6S°C to +125°C

Contextual Info: TOSHIBA C55V1001 AF/AFT/ATR/AST/ASR-85,-10.-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC R A M DESCRIPTION The C55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as

demag ds 20

Abstract: VN340SP VN330SP OATI
Contextual Info: VN340SP QUAD HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE VN340SP V demag * R DS on * V C C-55V 0.2 Ω I OUT * VC C 1A 36 V * per Channel • ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 1A PER CHANNEL DIGITAL I/O’s WITH 30V MAX VOLTAGE

Contextual Info: SEP % V '195 m oiaic 128K X 8 S R A M MSM8128-020/025/35 Issue 1.1 : September 1993 ADVANCE PRODUCT INFORMATION Semiconductor ^ Pin Definition 131,072 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 020/025/35 ns JEDEC Standard 32 pin DIL footprint

VN330SP

Abstract: OATI
Contextual Info: VN330SP QUAD HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE VN330SP V demag * R DS on * V C C-55V 0.2 Ω I OUT * VC C 1A 36 V * per Channel • ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 1A PER CHANNEL DIGITAL INPUTS WITH 30V MAX VOLTAGE

transistor 5d

Abstract: TC-2177 IC S350 marking s350
Contextual Info: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci