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    C4D10120 Search Results

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    C4D10120 Price and Stock

    Wolfspeed C4D10120E-TR

    DIODE SIL CARB 1200V 33A TO2522
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    DigiKey C4D10120E-TR Reel 2,500 2,500
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    Verical C4D10120E-TR 3,484 9
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    Newark C4D10120E-TR Bulk 2,500
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    Richardson RFPD C4D10120E-TR 2,500
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    Chip One Stop C4D10120E-TR Cut Tape 3,484 0 Weeks, 1 Days 1
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    Wolfspeed C4D10120H

    DIODE SIL CARB 1.2KV 31.5A TO247
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    DigiKey C4D10120H Tube 756 1
    • 1 $9.52
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    Verical C4D10120H 265 2
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    C4D10120H 240 240
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    Arrow Electronics C4D10120H 265 13 Weeks 1
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    C4D10120H 240 13 Weeks 240
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    Newark C4D10120H Bulk 1
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    TME C4D10120H 1
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    Richardson RFPD C4D10120H 1
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    Vyrian C4D10120H 312
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    Wolfspeed C4D10120G

    SIC, SCHOTTKY DIODE, 10A, 1200V,
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    DigiKey C4D10120G Tube
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    Wolfspeed C4D10120E

    Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
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    Verical C4D10120E 7,200 8
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    C4D10120E 3,225 3,225
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    C4D10120E 3,188 10
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    C4D10120E 2,661 10
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    C4D10120E 2,557 2
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    Arrow Electronics C4D10120E 3,225 13 Weeks 3,225
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    C4D10120E 2,557 13 Weeks 1
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    TME C4D10120E 32 1
    • 1 $6.85
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    Richardson RFPD C4D10120E 5,849 1
    • 1 $5.8
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    Chip One Stop C4D10120E Tube 7,200 0 Weeks, 1 Days 1
    • 1 $4.8
    • 10 $4.77
    • 100 $3.66
    • 1000 $3.35
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    Vyrian C4D10120E 6,922
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    Wolfspeed C4D10120A

    Diode Schottky SiC 1.2KV 33A 2-Pin(2+Tab) TO-220 Tube
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    Verical C4D10120A 1,724 12
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    C4D10120A 886 8
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    C4D10120A 600 10
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    C4D10120A 450 50
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    C4D10120A 285 2
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    Arrow Electronics C4D10120A 450 13 Weeks 50
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    C4D10120A 285 13 Weeks 1
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    Newark C4D10120A Bulk 7,021 1
    • 1 $8.42
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    TME C4D10120A 48 1
    • 1 $7.37
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    Richardson RFPD C4D10120A 600 1
    • 1 $5.8
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    Chip One Stop C4D10120A Tube 886 0 Weeks, 1 Days 1
    • 1 $7.28
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    Vyrian C4D10120A 2,342
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    C4D10120 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C4D10120A Cree Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 14A TO220-2 Original PDF
    C4D10120D Cree Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247 Original PDF
    C4D10120E Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A TO252-2 Original PDF
    C4D10120E-TR Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 33A TO252-2 Original PDF
    C4D10120H Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - ZRECTM 10A 1200V SIC SCHOTTKY DI Original PDF

    C4D10120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c4d10120

    Abstract: C4D10120D
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


    Original     		C4D10120D O-247-3 C4D10120D C4D10120 c4d10120 PDF

    c4d10120

    Abstract: No abstract text available
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original     		C4D10120D O-247-3 C4D10120D C4D10120 c4d10120 PDF

    C4D10120A

    Abstract: CSD04060 12kv fast switching
    Text: C4D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 10 A Qc = 66 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


    Original     		C4D10120A O-220-2 C4D10120A C4D10120 CSD04060 12kv fast switching PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original     		C4D10120A O-220-2 C4D10120A PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		C4D10120D O-247-3 O-247 C4D10120D C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 16 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original     		C4D10120E O-252-2 C4D10120E PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		C4D10120D O-247-3 O-247 C4D10120D C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		C4D10120D O-247-3 O-24planted C4D10120A PDF

    c4d10120

    Abstract: C4D10120E TO-252-2
    Text: C4D10120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF, = 16 A TC<135˚C Qc Features • • • • • = 66 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original     		C4D10120E 1200-Volt O-252-2 C4D10120E C4D10120 c4d10120 TO-252-2 PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original     		C4D10120D O-247-3 O-24planted C4D10120A C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120E VRRM Silicon Carbide Schottky Diode Qc Features = 52 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • •


    Original     		C4D10120E 1200-Volt O-252-2 C4D10120E PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original     		C4D10120A O-220-2 C4D10120A PDF

    c4d10120

    Abstract: CSD04060
    Text: C4D10120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 10 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original     		C4D10120E 1200-Volt O-252-2 C4D10120E C4D10120 c4d10120 CSD04060 PDF

    cmf20120

    Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET PDF

    C2M1000170

    Abstract: Diode 1S 2473
    Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473 PDF

    cmf20120

    Abstract: CMF20120D MOSFET 20a 800v
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 MOSFET 20a 800v PDF

    c2m0080120

    Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams PDF

    C4D05120

    Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606
    Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A


    Original     		CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606 PDF

    C2M0160120D

    Abstract: No abstract text available
    Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0160120D O-247-3 C2M0160applications C2M0160120D PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0080120D O-247-3 C2M0080120D PDF