C4210 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1621 Unit in mm + 0.5 2.5 - 0.3 AUDIO POWER AMPLIFIER APPLICATIONS. • High hpE: hFE~100~320 • Complementary to C4210 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT vCB0 -35 V Collector-Emitter Voltage vCE0 -30

Contextual Info: SEC “ ; ' NEC Electronics Inc. MC-421000A8 1,048,576 x 8-Bit Dynamic CMOS RAM Module Prelim inary Information August 1992 Description Pin Configurations The MC-421000A8 is a fast-page 1,048,576-word by 8-bit dynamic RAM module designed to operate from a

Contextual Info: m il W NEC Electronics Inc. MC-421000A8 1,048,576 X 8-Bit Dynamic CMOS RAM Module Description Pin Configurations The MC-421000A8 is a fast-page 1,048,576-word by 8-bit dynamic RAM module designed to operate from a single +5-volt power supply. Refreshing is accom­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M C-421000AA64FA 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64FA is a 1,048,576 words by 64 bits dynamic RAM module on which 16 pieces of 4 M DRAM: /iPD424400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

MCP67MV

Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

Attansic L1

Abstract: pr6239 RC415M RC415ME ICS951463AGLFT ASUS attansic f1 RTS5117 C3902 ICS951463
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

L7803

Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

asus

Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
Contextual Info: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;

IBM 1Mx4

Abstract: 1MX16
Contextual Info: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V

MC-421000A36BE-80

Abstract: MC421000A36BJ70
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-421000A32, 421000A36 SERIES 1 M-WORD BY 32-BIT, 1 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C -4 2 1 0 0 0 A 3 2 serie s is a 1,048,576 w o rd s by 32 bits d yn am ic R A M m od u le on w h ich 8 pieces of

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

MC-421000A9BA-70

Abstract: MC-421000A9BA-80 MC421000A9BA70
Contextual Info: NEC MOS INTEGRATED CIRCUIT M C - 421000A 8, 421000A 9 S E R IE S 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A8 is a 1 048 576 w o rd s b y 8 b its dyn a m ic RAM m o d u le on w h ich 2 pieces o f 4 M DRAM

30-pin simm memory

Contextual Info: M C-421000C9 1 ,0 4 8 ,5 7 6 X 9-BIT c m o s d y n a m ic r a m m o d u le w NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations T h e M C-421000C9 is a static-colum n 1,048,576-word by 9-bit dynam ic RAM module designed to operate

LM27555

Contextual Info: N EC MOS INTEGRATED CIRCUIT MC-421000A8,421000A9 SERIES 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C - 4 2 1 0 0 0 A 8 is a 1 0 4 8 5 7 6 w o r d s b y 8 b its d y n a m ic R A M m o d u le o n w h ic h 2 p ie c e s o f * M D R A M

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000F32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The M C -421000F32 is a 1,048,576 words by 32 bits dynam ic RAM m odule on which 2 pieces of 16 M DRAM: iiPD 4218165 are assembled. This m odule provides high density and large quantities of memory in a small space w ithout utilizing the surfacemounting technology on the printed circuit board.

Contextual Info: N » 1 9 M 9Z MC-421000AA40, -421000AB40 1,048,576 X 40-Bit Dynamic CMOS RAM Module L i M li W NEC Electronics Inc. February 1992 Description Pin Configuration The MC-421000AA40 and MC-421000AB40 are fastpage dynamic RAM modules organized as 1,048,576 words by 40 bits and designed to operate from a single

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 words by 32 bits dynamic RAM module on which 2 pieces of 16 M DRAM: /¿PD4218160 are assembled.