Untitled
Abstract: No abstract text available
Text: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial
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E12E24E48
200il
F-67441
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15N160
Abstract: 40N160 9N160 40N140
Text: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140
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O-247
9N140
9N160
15N140
20N140
20N160
40N140
40N160
15N160
40N160
9N160
40N140
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30U6P42
Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir cuit The switching regulator IC TA76524P which
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24VDC
110VAC
100kHz
TA76524P
2SK358
100VAC
MG15N6EK1
MG25M2YK1X3
30U6P42
MG15G6EL1
30L6P44
12v dc to 440v ac inverter
EI40 transformer
76524P
12v dc choke inverter circuit
MG60M1AL1
TA76524
TDK transformer z
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CM1218
Abstract: CM1218-C4SE LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SMT marking R4C
Text: CM1218-C4 Low Capacitance Transient Voltage Suppressors / ESD Protectors Features Product Description • • • The CM1218-C4 device features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which
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CM1218-C4
CM1218-C4
CM1218,
CM1218
OT-553
CM1218-C4SE
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SMT
marking R4C
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LC32020
Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING
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LC32016
LC32020
LC32016
LC32020
power mosfet module
n-channel 500w power mosfet
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diode F4
Abstract: diode F4 11 12KF4 igbt F4 400 R 12 KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 26,4 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 5 7 C3 E4 E3 G3 4 tief 3,35 15 5,5 C1 + external connection to be done C3 G1 G3 E1 E3 C2 C4 G2 G4 E2 - +
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ccd diode
Abstract: dalsa ia-d2-0512 D0G0332 ccd diode datasheet
Text: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 B I D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays PALSA ''"’P ' ^ I -3 S INC FEATURES_ • 60 MHz Effective Data Rate
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IA-D2-0512
ccd diode
dalsa ia-d2-0512
D0G0332
ccd diode datasheet
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IL-C6-2048
Abstract: IL-C2-0512 Dalsa ccd diode DDD0257 IL-C3-0128 IL-C3-0256 IL-C3-0512 IL-C4-1024 IL-C4-2048
Text: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 BI D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays ''"’P ' ^ I -3 S PALSA INC FEATURES_ • 60 MHz Effective Data Rate
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QQ0033S
IA-D2-0512
IL-C6-2048
IL-C2-0512
Dalsa
ccd diode
DDD0257
IL-C3-0128
IL-C3-0256
IL-C3-0512
IL-C4-1024
IL-C4-2048
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FS400
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 26,4 G3 E4 E3 5 7 C3 4 tief 3,35 15 5,5 external connection to be done + + C1 C3 G1 G3 E1 E3 C2 C4 G2 G4 A E2
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igbt F4 400 R 12 Kf4
Abstract: diode F4 11
Text: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 26,4 G3 E4 E3 5 7 C3 4 tief 3,35 15 5,5 external connection to be done + C1 C3 G1 G3 E1 E3 C2 C4 G2 G4 E2 + A
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Untitled
Abstract: No abstract text available
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 5 1 .0 5 7 .0 2 8 .0 1 0 .0 T Y P ø 4 .2 5 2 P O S N FEATURES 7 .0 • P - CHANNEL POWER MOSFETS 6 .3 5 T Y P • N - CHANNEL POWER MOSFETS
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LC32016
LC32020
300ms
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APT0502
Abstract: APTGT50TDU170PG
Text: APTGT50TDU170PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 E3 G5 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES
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APTGT50TDU170PG
APT0502
APTGT50TDU170PG
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APTGT50TDU60P
Abstract: MJ480
Text: APTGT50TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G5 E3 E1 E5 E1/E2 E3/E4 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G3 G1 E1/E2 C2 E1 C5 E3/E4 E3 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT50TDU60P
APTGT50TDU60P
MJ480
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igbt 600V
Abstract: APT0502 APTGT75TDU60PG
Text: APTGT75TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT75TDU60PG
igbt 600V
APT0502
APTGT75TDU60PG
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APTGT75TDU60P
Abstract: No abstract text available
Text: APTGT75TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT75TDU60P
APTGT75TDU60P
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APT0502
Abstract: APTGT100TDU60PG IGBT triple modules 100A
Text: APTGT100TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT100TDU60PG
APT0502
APTGT100TDU60PG
IGBT triple modules 100A
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APTGT100TDU60P
Abstract: No abstract text available
Text: APTGT100TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT100TDU60P
APTGT100TDU60P
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E6 DIODE
Abstract: APTGT50TDU170P DIODE e5
Text: APTGT50TDU170P Triple Dual Common Source Trench IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA
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APTGT50TDU170P
E6 DIODE
APTGT50TDU170P
DIODE e5
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APT0502
Abstract: APTGT150TDU60PG SP6-P
Text: APTGT150TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT150TDU60PG
APT0502
APTGT150TDU60PG
SP6-P
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APTGF50TDU120P
Abstract: No abstract text available
Text: APTGF50TDU120P Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings
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APTGF50TDU120P
APTGF50TDU120P
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APTGF50TDU120PG
Abstract: APT0502
Text: APTGF50TDU120PG Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module C5 C3 G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT FAST IGBT
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APTGF50TDU120PG
APTGF50TDU120PG
APT0502
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APT0502
Abstract: APTGF90TDU60PG
Text: APTGF90TDU60PG Triple dual Common Source VCES = 600V IC = 90A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT Fast IGBT
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APTGF90TDU60PG
APT0502
APTGF90TDU60PG
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smd diode marking 79
Abstract: BB141 marking code 4 SC-79 MARKING C SOD523 smd marking 76 smd diode code 39 marking code b SC-79
Text: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 141 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION
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BB141
OD523
SC-79)
OD523
SC-79
smd diode marking 79
marking code 4 SC-79
MARKING C SOD523
smd marking 76
smd diode code 39
marking code b SC-79
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Bb142
Abstract: marking code 4 SC-79
Text: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION
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BB142
OD523
SC-79)
OD523
SC-79
marking code 4 SC-79
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