marking code C3J
Abstract: C3j marking c30 C3J code C3J marking c3j CMLDM7003 CMLDM7003J sot transistor pinout
Text: CMLDM7003 CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE • ESD protected up to 2kV MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current
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CMLDM7003
CMLDM7003J
CMLDM7003:
CMLDM7003J:
OT-563
17-October
marking code C3J
C3j marking
c30 C3J
code C3J
marking c3j
sot transistor pinout
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C3j marking
Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel
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CMLDM7003
CMLDM7003J
CMLDM7003
CMLDM7003J
OT-563
CMLDM7003:
CMLDM7003J:
26-June
C3j marking
code c3j
sot transistor pinout
"MARKING CODE C3*"
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
sot 26 Dual N-Channel MOSFET
marking c3j
c30 C3J
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Untitled
Abstract: No abstract text available
Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel
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CMLDM7003
CMLDM7003J
CMLDM7003
CMLDM7003J
OT-563
CMLDM7003:
CMLDM7003J:
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Untitled
Abstract: No abstract text available
Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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CMLDM7003
CMLDM7003G*
CMLDM7003J
OT-563
CMLDM7003
28-January
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CMLDM7003
Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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CMLDM7003
CMLDM7003G*
CMLDM7003J
OT-563
CMLDM7003
CMLDM7003J
c30 C3J
c30 diode
marking c3j
C3j marking
code C3J
marking code C3J
CMLDM7003G
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Untitled
Abstract: No abstract text available
Text: CMLDM7003 CMLDM7003G* CMLDM7003J w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage
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CMLDM7003
CMLDM7003G*
CMLDM7003J
OT-563
CMLDM7003
18-January
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CMLDM7003
Abstract: C3j marking CMLDM7003J code c3j marking c3j c30 C3J marking code C3J CMLDM7003G
Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current
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CMLDM7003
CMLDM7003G*
CMLDM7003J
OT-563
CMLDM7003
18-January
C3j marking
CMLDM7003J
code c3j
marking c3j
c30 C3J
marking code C3J
CMLDM7003G
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PC3223TB
Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
HS350
WS260
IR260
PU10491EJ01V0DS
marking c3j
C1f TRANSISTOR
marking c1d
PC3223TB-E3
PC2708TB
PC2709TB
UPC3223TB
PC3223TB-E3-A
PC2710TB
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C3j marking
Abstract: UPC3223TB marking c3j HS350 PC2710TB marking c1d PU10491EJ01V0DS UPC3223TB-E3
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
C3j marking
UPC3223TB
marking c3j
HS350
PC2710TB
marking c1d
PU10491EJ01V0DS
UPC3223TB-E3
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Transistor Marking C3
Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
Transistor Marking C3
PC2710TB
UPC3223TB
marking c3j
HS350
PC2708TB
marking c1d
PC3223TB-E3
PC3223TB-E3-A
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uPC3223TB
Abstract: HS350 PC2710TB C3j marking marking c3j marking c1d PU10491EJ01V0DS
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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PC3223TB
PC3223TB
50conductor
uPC3223TB
HS350
PC2710TB
C3j marking
marking c3j
marking c1d
PU10491EJ01V0DS
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HS350
Abstract: PC2710TB marking c3j UPC3223TB PU10491EJ01V0DS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C3j marking
Abstract: DTC123J marking c3j
Text: UTC DTC123J NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with
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DTC123J
OT-523
QW-R221-006
C3j marking
DTC123J
marking c3j
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marking SAIo
Abstract: in snec 0IKE 08x4 RK09K RK09K1110 code C3J marking code C3J marking c3j
Text: No. KX-97-T793 Cus t ome r• Date: Feb. 19. 1997 Att.t»nt. i on : Your ref. No : Your Part. No :29 SPEC IFI CATIONS ALPS'; 29 0007 MODEL Snec. No. Sample RECEIPT : No. : W1 01 1 758M STATUS RECEIVED By. Date Si Enature Name Title ALPS.ELECTRIC CO., LTD.
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KX-97-T793
KX-97-1793
RK09K1110
POIM10MBIERS.
W1011758M
K091B0Z91
96-09-i3
WI0II758M
91BOZ91
marking SAIo
in snec
0IKE
08x4
RK09K
RK09K1110
code C3J
marking code C3J
marking c3j
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marking code C1F mmic
Abstract: marking code C1d mmic
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3225TB
PC3225TB
95GHz
IR260
WS260
HS350
PU10500EJ01V0DS
marking code C1F mmic
marking code C1d mmic
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PC3225
Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
HS350
WS260
IR260
PU10734EJ01V0DS
PC3225
transistor marking 6U ghz
PC2710TB
C3J marking
max3139
PC2708TB
PC2709TB
marking c1d
PC3223TB
marking c3j
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RO4003C
Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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PC3232TB
PC3232TB
RO4003C
S11F
PC2710TB
C3J marking
UPC3223TB
marking c3j
marking c3s
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transistor marking c3n
Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3226TB
PC3226TB
transistor marking c3n
PC2710TB
UPC3226TB
C3J marking
upc3225tb
marking c1d
marking c3j
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MARKING BS
Abstract: C3j marking TIC 1.0M marking c3j TA4100F
Text: TO SHIBA TA4100F Bipolar Linear Integrated Circuit Unit in mm UHF VHF RF, Mix Application u - a î Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC ♦ 0.2 1.5 - 0.1 SYM BOL RATING UNIT C ollector-Base Voltage ^CBO 10 V C ollector-E m itter Voltage VcEO
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TA4100F
OSI111
MARKING BS
C3j marking
TIC 1.0M
marking c3j
TA4100F
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code c3j
Abstract: C3j marking marking code C3J marking c3j
Text: For technical assistance call the Strategic Products number on the back cover. Featu res A p p lica tio n s • Recommended fo r reflow processing ■ Rotor design compatible with pick and place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compat
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lSSbS73
code c3j
C3j marking
marking code C3J
marking c3j
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Untitled
Abstract: No abstract text available
Text: c ta n k e 0 1 :57:13 2 0 1 2 / 07/21 APPLICA 3LE STANDARD O PER ATING STO RAG E -55 TEM PER ATU R E RANGE °C TO +85 °C O PER ATIN G RATING VOLTAGE 300 V AC 2A °C TO +60 °C H U M IDITY 85% MAX RANGE S TO RAG E CURRENT -10 TE M PE R ATU R E RANGE H U M IDITY
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MIL-STD-1344.
ELC4-019112-02
PCN10-128S-2.
54DSA
HD0011-2-1
L583-0089-2-77
HC0011-
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DF40
Abstract: 60DS-0
Text: c a r o l. tr ib b le 0 2 :30:40 2009/ 10/23 A P P L IC A 3LE S T A N D A R D OPERATING TEMPERATURE RANGE RATING STORAGE TEMPERATURE RANGE APPLICABLE CONNECTOR -35°C TO 85°C NOTE 1 VOLTAGE 30V AC CURRENT 0. 3A notice to change without is subject FOR REFERENCE:This
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-60DP-0.
CL684-4085-8-51
DF40HCC2
0806CPACKING
CL684-4085-8-51
DF40HCC2.
-60DS-0.
4VC51>
DF40HC
DF40
60DS-0
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2SA592
Abstract: 2SC41 2SA1592 2SC4134
Text: SANYO SEMICONDUCTOR CORP 2SE D • 2SA1592, 2SC4134 7 e5ci ? a 7 b 0Q070b4 T ■ T-3 3 -n T -3 3 -0 1 PN P /N PN Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2510A Applications . Power supplies, relay drivers, lamp drivers
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0007Gb4
2SA1592,
2SC4134
T-33-/7
2SA1592/2SC4l34-applied
2SA1592
2SA592
2SC41
2SA1592
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code C3J
Abstract: marking code C3J marking c3j marking code 8hs
Text: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited
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LH53B8600D
LHMB86xx)
EL099183
34TYR
25-tO
DIP42-P-600
CV651
code C3J
marking code C3J
marking c3j
marking code 8hs
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