C38 TRANSISTOR Search Results

C38 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

C38 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B38 SMD Transistor Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC Text: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805	Original	CC0805 CR0805 B38 SMD Transistor 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC	PDF
C35 zener Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	AN215A, MRF1570T1 MRF1570FT1 C35 zener z15 Diode glass 125 c35 fet MOSFET c25 / 0	PDF
C38 diode Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor	PDF
transistor c36 Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband	Original	MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet	PDF
z15 Diode glass Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263 Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 z15 Diode glass Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263	PDF
z15 Diode glass Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570T1/D MRF1570T1 MRF1570FT1 z15 Diode glass 107 J117 surface mount TRANSISTOR zener diode z7 b2 C35 zener	PDF
C35 zener Abstract: ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 MRF1570T1 J117 MOSFET Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570T1/D MRF1570T1 MRF1570FT1 C35 zener ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 J117 MOSFET	PDF
diode zener c26 Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570 Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 diode zener c26 A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570T1 mrf1570	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1	PDF
AN215A Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 AN215A z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A	PDF
Motorola 622 J112 Abstract: J-174 MRF1570FT1 C2568 Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570T1/D MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 Motorola 622 J112 J-174 C2568	PDF
J042 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570T1 MRF1570NT1 MRF1570FNT1 MRF1570FT1 J042	PDF
zener diode marking c24 Abstract: transistor c36 j063 Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063	PDF
C12 IC GATE Abstract: mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 MRF1570FT1 MRF1570NT1 MRF1570T1 Motorola 622 J112 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF1570T1/D MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 MRF1570NT1 C12 IC GATE mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 Motorola 622 J112	PDF

226 35K Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.	Original	IntegrF19120 MRF19120S MRF19120	PDF
capacitor 226 35K Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k	PDF
Z-34 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF19120 MRF19120S Z-34	PDF
226 35K capacitor Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21120R6 226 35K capacitor capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k	PDF
226 35K capacitor Abstract: capacitor 226 35K R 226 35k Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	2170fficiency, MRF21120 MRF21120S 226 35K capacitor capacitor 226 35K R 226 35k	PDF
AGR19180EF Abstract: JESD22-A114 Z111A Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6	PDF
ATC100B390JT500XT Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300H	PDF

C38 TRANSISTOR Search Results

C38 TRANSISTOR Result Highlights (5)

C38 TRANSISTOR Datasheets Context Search

B38 SMD Transistor

C35 zener

C38 diode

transistor c36

z15 Diode glass

z15 Diode glass

C35 zener

diode zener c26

Untitled

AN215A

Motorola 622 J112

J042

zener diode marking c24

C12 IC GATE

226 35K

Untitled

capacitor 226 35K

Z-34

226 35K capacitor

226 35K capacitor

AGR19180EF

Untitled

ATC100B390JT500XT

Untitled