Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C337 W 80 TRANSISTOR Search Results

    C337 W 80 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C337 W 80 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c337 transistor

    Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
    Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340 PDF

    c337 transistor

    Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338 PDF

    PSMN5R0-30YL

    Abstract: jmb 363
    Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN5R0-30YL PSMN5R0-30YL jmb 363 PDF

    c337 transistor

    Abstract: C338 c338 transistor
    Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PH1825AL PH1825AL c337 transistor C338 c338 transistor PDF

    PSMN2R0-30YL

    Abstract: No abstract text available
    Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN2R0-30YL PSMN2R0-30YL PDF

    PSMN4R0-30YL

    Abstract: No abstract text available
    Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN4R0-30YL PSMN4R0-30YL PDF

    PSMN3R0-30YL

    Abstract: No abstract text available
    Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN3R0-30YL PSMN3R0-30YL PDF

    PSMN2R5-30YL

    Abstract: No abstract text available
    Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN2R5-30YL PSMN2R5-30YL PDF

    PSMN3R5-30YL

    Abstract: No abstract text available
    Text: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN3R5-30YL PSMN3R5-30YL PDF

    PSMN6R0-30YL

    Abstract: No abstract text available
    Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN6R0-30YL PSMN6R0-30YL PDF

    PSMN7R0-30YL

    Abstract: 10S100
    Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN7R0-30YL PSMN7R0-30YL 10S100 PDF

    transistor c337

    Abstract: PSMN1R7-30YL
    Text: PSMN1R7-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN1R7-30YL PSMN1R7-30YL transistor c337 PDF

    PSMN1R5-25YL

    Abstract: No abstract text available
    Text: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN1R5-25YL PSMN1R5-25YL PDF

    PSMN9R0-30YL

    Abstract: c337 transistor
    Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN9R0-30YL PSMN9R0-30YL c337 transistor PDF

    PSMN2R0-30YL

    Abstract: No abstract text available
    Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN2R0-30YL PSMN2R0-30YL PDF

    PSMN3R0-30YL

    Abstract: No abstract text available
    Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN3R0-30YL PSMN3R0-30YL PDF

    PSMN5R0-30YL

    Abstract: No abstract text available
    Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN5R0-30YL PSMN5R0-30YL PDF

    PSMN7R0-30YL

    Abstract: C337 40 w 22
    Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN7R0-30YL PSMN7R0-30YL C337 40 w 22 PDF

    PSMN4R0-30YL

    Abstract: No abstract text available
    Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN4R0-30YL PSMN4R0-30YL PDF

    PSMN3R5-30YL

    Abstract: No abstract text available
    Text: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN3R5-30YL PSMN3R5-30YL PDF

    PH5030AL

    Abstract: PH5030
    Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PH5030AL PH5030AL PH5030 PDF

    PSMN6R0-30YL

    Abstract: No abstract text available
    Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN6R0-30YL PSMN6R0-30YL PDF

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530 PDF

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005 PDF