irfz34n equivalent
Abstract: diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N
Text: PD - 9.1489A International IQR Rectifier IRFIZ34N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55V RDS on = 0.04Q
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IRFIZ34N
C-338
C-339
irfz34n equivalent
diode c335
diode C339
C337 W
DIODE c336
C337 W 61
equivalent IRFZ34n
IRFIZ34N
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v42254-a3346
Abstract: V42254-A3216-B309
Text: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.
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15-contact
25-contact
37-contact
V23529-A1221-B
25-contact,
v42254-a3346
V42254-A3216-B309
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burndy Y39
Abstract: YAV4C-TC14-FXB
Text: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M
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SE208075
SE206075-01
5E208075
burndy Y39
YAV4C-TC14-FXB
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C 337-25
Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC337
BC327.
115002/00/03/pp8
C 337-25
C 33725
c337 pnp transistor
C 337-40
c 33740
transistor NPN c337
BC337 sot54
c337 transistor
transistor c337
C337 W 63
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PSMN5R0-30YL
Abstract: jmb 363
Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
jmb 363
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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PSMN3R0-30YL
Abstract: No abstract text available
Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R0-30YL
PSMN3R0-30YL
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PSMN2R5-30YL
Abstract: No abstract text available
Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R5-30YL
PSMN2R5-30YL
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SCD1U50V3KX-GP
Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
Text: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD
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-TACT-119-GP
SKT-USB-295-GP
G547F2P81U-GP
SC4D7U16V5ZY-GP
SCD1U50V3KX-GP
00PAD
STFT236BR48H172-GP
SCD1U50V3KX-GP
SC10U25V6KX-1GP
G547F2
SC1U50V5ZY-1-GP
SRN33J-7-GP
SC10U6D3V3MX-GP
SIS412DN-T1-GE3-GP
200KR2F-L-GP
SC1U25V3KX-1-GP
10KR2F-2-GP
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C337 w 79
Abstract: PSMN2R5-30YL
Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R5-30YL
PSMN2R5-30YL
C337 w 79
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PSMN9R0-30YL
Abstract: No abstract text available
Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN9R0-30YL
PSMN9R0-30YL
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PSMN5R0-30YL
Abstract: No abstract text available
Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
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PH5030AL
Abstract: PH5030
Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH5030AL
PH5030AL
PH5030
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PSMN3R0-30YL
Abstract: No abstract text available
Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R0-30YL
PSMN3R0-30YL
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d331 npn transistor
Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .
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SLEA055
TAS5508-5142K7EVM
TAS5508BPAG
TAS5142DKD,
32-bit
24-bit
48-bit
TIC-HSINK-015
d331 npn transistor
pin configuration NPN transistor c458
transistor C458
D331 transistor
D330 NPN transistor
d331 npn transistor pin configuration
smd diode D450
c458 NPN transistor
smd diode D451
transistor D450
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PSMN2R5-30YL
Abstract: No abstract text available
Text: LF PA K PSMN2R5-30YL N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R5-30YL
PSMN2R5-30YL
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PSMN9R0-30YL
Abstract: No abstract text available
Text: LF PA K PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN9R0-30YL
PSMN9R0-30YL
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PSMN3R0-30YL
Abstract: No abstract text available
Text: LF PA K PSMN3R0-30YL N-channel 30 V 3 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R0-30YL
PSMN3R0-30YL
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PSMN5R0-30YL
Abstract: No abstract text available
Text: LF PA K PSMN5R0-30YL N-channel 30 V 5 mΩ logic level MOSFET in LFPAK Rev. 4 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
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76M12
Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
Text: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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M21125/M21115
21125-EVMD-001-A
76M12
u19 c629
c639
M21125
microwave inverter panasonic
c86 sot23-8
smd m21 sot23
panasonic inverter microwave
diode C646
PANASONIC C372
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Untitled
Abstract: No abstract text available
Text: EPSON _ E0C63256 4-bit Single Chip Microcomputer \ • 4-bit E0C63000 Core CPU 1 • A /D C o n v e rte r • Built-in L C D D river • H igh S p e e d Instruction C y c le 2 -6 C P I I D E S C R IP T IO N The E0C63256 is a microcomputer composed of a CMOS 4-bit core CPU (E0C63000), ROM, RAM, LCD driver
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E0C63256
E0C63000
E0C63256
E0C63000)
C-337
33b4134
0QG32fe
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transistor C458
Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
Text: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module
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SLEA061
TAS5518-5152K8EVM
TAS5518PAG
TAS5152DKD,
32-bit
24-bit
48-bit
transistor C458
d331 npn transistor pin configuration
d331 npn transistor
pin configuration NPN transistor c458
C458 datasheet
c337 pnp transistor
D331 PNP
c458 NPN transistor
smd diode D451
capacitor 100nf 50v 0805 datasheet
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transistor r1009
Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02
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CTM805SVSERV
107-800455-4G
127-476042-0D
130-600101-0G
190-R63300-02
774-R63301-00
774-R63302-00
774-R63303-00
849-R63301-00
892-R63301-06
transistor r1009
ctv350s
ZD405
OPT601
r63302
ic902
TH901
q702 transistor
w17 transistor
philips carbon film resistor
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tss400cfn-s3
Abstract: TSS400-S1 TSS400 TSS400QFN-S3 msp430 DC motor control tss400-s3 real time clock in MSP430 MSP-PRG430A MSP430 QFP100 SLAUE13
Text: Low-Power Microcontroller Quick Reference Guide Texas Instruments MSP430 devices are not available in all locations. Please contact your local TI Sales Office or Distributor for availability and pricing.
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MSP430
TSS400
MSP430x310
MSP430x320
MSP430x330
tss400cfn-s3
TSS400-S1
TSS400
TSS400QFN-S3
msp430 DC motor control
tss400-s3
real time clock in MSP430
MSP-PRG430A
MSP430 QFP100
SLAUE13
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