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    C3072 Price and Stock

    Excelitas Technologies Corporation C30724PH

    SENSOR PHOTODIODE 920NM TO18-2
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    DigiKey C30724PH Bulk 71 1
    • 1 $21.75
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    Omega Engineering LC307-2K

    TOP HAT MINIATURE LOAD CELL, COM
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    DigiKey LC307-2K Bulk 1
    • 1 $641.03
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    Newark LC307-2K Bulk 1
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    RS LC307-2K Bulk 3 Weeks 1
    • 1 $720.54
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    XP Power RDC3072D12

    DC DC CONVERTER +/-12V 30W
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    XP Power RDC3072S05

    DC DC CONVERTER 5V 30W
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    XP Power RDC3072T0315

    DC DC CONVERTER 3.3V +/-15V 30W
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    Find more C3072 price and stock on Findchips.com

    C3072 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30723G PerkinElmer Optoelectronics Ingaas Pin Large-area 900 NM to 1700 NM Original PDF
    C30723GH Excelitas Technologies INGAAS PIN, 5MM, TO-8 PACKAGE Original PDF
    C30724P EG&G LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) Scan PDF
    C30724PH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD TO-18 PLASTIC Original PDF

    C3072 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c3072

    Abstract: line filter 6.8mH C307-2
    Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]


    Original     		C3072 C3072 016REF 10kHz, 100mVAC, 100mADC, 100kHz, line filter 6.8mH C307-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original     		O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 PDF

    c3072

    Abstract: hFE kec KTC3072L marking K 00 Marking C307-2
    Text: SEMICONDUCTOR C3072L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072L 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :


    Original     		KTC3072L C3072 c3072 hFE kec KTC3072L marking K 00 Marking C307-2 PDF

    c3072

    Abstract: KTC3072D
    Text: SEMICONDUCTOR C3072D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072D 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :


    Original     		KTC3072D C3072 c3072 KTC3072D PDF

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original     		O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13 PDF

    EG*G Optoelectronics

    Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
    Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c


    OCR Scan     		C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100 PDF

    Untitled

    Abstract: No abstract text available
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    MAX8770

    Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
    Text: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)


    Original     		318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8053 ALC260 TI-TPA6011A4 MAX8770 ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta PDF

    C3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		2SC3072 C3072 2SC3072 c3072 npn PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    C3072

    Abstract: c3072 npn 2SC3072
    Text: C3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		2SC3072 20070701-JA C3072 c3072 npn 2SC3072 PDF

    PGEW 3S09

    Abstract: C30724 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09
    Text: Optoelectronics Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes including PerkinElmer


    Original     		C30724 905nm lO-0812/03 PGEW 3S09 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09 PDF

    laser diode 905nm

    Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
    Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of


    Original     		905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09 PDF

    schematic diagram analog tv tuner rca

    Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
    Text: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and


    Original     		DSD0503040C2 DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG schematic diagram analog tv tuner rca dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017 PDF

    2SC3072

    Abstract: C3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 2SC3072 C3072 PDF

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 c3072 2SC3072 c3072 npn PDF

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·


    Original     		2SC3072 c3072 2SC3072 c3072 npn PDF

    c3072

    Abstract: c3072 npn 2SC3072
    Text: Transistors SMD Type Silicon NPN Epitaxial C3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072 PDF

    Untitled

    Abstract: No abstract text available
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 PDF

    c3072 npn

    Abstract: c3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 c3072 npn c3072 PDF

    2SC3072

    Abstract: C3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 2SC3072 C3072 PDF

    c3207

    Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320 PDF