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    C3 SC-59 TOSHIBA Search Results

    C3 SC-59 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    C3 SC-59 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59YM916AMG32A

    Abstract: XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 TC59YM916AMG24A Rambus XDR
    Text: TC59YM916AMG24A,32A,32B,40B TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free Overview The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM916AMG24A 512Mb TC59YM916AMG32A XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 Rambus XDR

    smd ra6

    Abstract: XDR DRAM XDR Rambus SMD fuse BA
    Text: TC59YM816BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM816BKG24A 256Mb smd ra6 XDR DRAM XDR Rambus SMD fuse BA

    xdr rambus

    Abstract: SMD fuse BA
    Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM916BKG24A 512Mb xdr rambus SMD fuse BA

    SLG8SP568V

    Abstract: SCD1U10V2KX-4GP WISTRON power sequence WISTRON VT1311 TYCO-CONN52-GP mocha caramel w37 FET VCC1R05AUX
    Text: JUL'07 Intel Penryn LV/ULV SFF Processor 3,4 Clock Generator MLF68 15 AGTL+ FSB DDR3 1067/800MHz 204-PIN DDR3 SODIMM Channel B MAX6622 5 Bus Switch IC 39 CRT I/F LVDS 12.1'' WXGA LCD 16 RGB CRT CRT SELECTION 17 L1:TOP L2:Signal 1 L3:GND L4:Signal 2 L5:VCC


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    PDF MLF68 1067/800MHz 4Y401 204-PIN 1067/800MHz MAX6622 SCD1U10V2KX-4GP SCD1U10V2KX-4GP SLG8SP568V WISTRON power sequence WISTRON VT1311 TYCO-CONN52-GP mocha caramel w37 FET VCC1R05AUX

    s34 diode

    Abstract: transistor SMD t17 XDR Rambus TPDN SMD fuse BA
    Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM916BKG24A 512Mb s34 diode transistor SMD t17 XDR Rambus TPDN SMD fuse BA

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    PDF MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3

    M5M51008AP-70l

    Abstract: M5M51008AP Siemens sda 5250 c4 m5m51008ap70l PLCC84 package TC551001BPL-70L M5M51008AP-70 628128p data 2 sc 5250 teletext processor
    Text: ICs for Consumer Electronics TVTEXT – SDA 5250 with External 128 TTX Pages Application Note 1997-07-03 SDA 5250 Revision History: Current Version: 1997-07-03 Previous Version Subjects major changes since last revision Application Note 02.97 Description for 128 TTX pages application for TVTEXT SDA 5250 with


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    PDF UES09825 M5M51008AP-70l M5M51008AP Siemens sda 5250 c4 m5m51008ap70l PLCC84 package TC551001BPL-70L M5M51008AP-70 628128p data 2 sc 5250 teletext processor

    DF10-31S-2DSA

    Abstract: KS-609 shinetsu ks-609 igbt trigger by opto pm600cla120 IPM Inverter KS-609 technical data MITSUBISHI ipm MODULES ps shinetsu G746 viscosity df10-31s
    Text: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 L-Series Power Devices Application Note Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Table of Contents Application Information 1.0


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    PDF PM75CLA060 DF10-31S-2DSA KS-609 shinetsu ks-609 igbt trigger by opto pm600cla120 IPM Inverter KS-609 technical data MITSUBISHI ipm MODULES ps shinetsu G746 viscosity df10-31s

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


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    PDF MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    D30 DIAC

    Abstract: D32 DIAC diac D30 TC9297F TC9297FB ak02
    Text: TOSHIBA TC9297F/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9297F, TC9297FB LCD DRIVER W ITH ON-CHIP KEY INPUT TC9297F/FB are an LCD driver 1C with on-chip key input, which is serial data controlled. FEATURES • Supports switching between 1/2 and 1/3 duty, and


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    PDF TC9297F/FB TC9297F, TC9297FB TC9297F/FB s36-s39 TC9297F QFP60-P-1414-0 QFP64-P-1212-0 QFP60-P-1414-0instruments, D30 DIAC D32 DIAC diac D30 TC9297F TC9297FB ak02

    ta8601bn

    Abstract: ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU
    Text: TOSHIBA Unit: TENTATIVE VIDEO-CHROMA-DEFLECT ION SYSTEM FOR A COLOR TELEVISION NTSC mm Z The TA8601BN combines the Video-Chroma sub­ system and the Deflection stage on a single monolithic integrated circuit to provide a Color Television Video-Chroma-Deflection systea.


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    PDF TA8601BN TA8601BN ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC9297F/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9297F, TC9297FB LCD DRIVER WITH ON-CHIP KEY INPUT TC9297F/FB are an LCD driver 1C with on-chip key input, which is serial data controlled. FEATURES • Supports switching between 1/2 and 1/3 duty, and


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    PDF TC9297F/FB TC9297F, TC9297FB TC9297F/FB 36-S39 QFP60-P-1414-0 QFP64-P-1212-0

    S3551

    Abstract: bl s37 s35 lcd TC9297F TC9297FB
    Text: TO SHIBA TC9297F/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9297F, TC9297FB LCD DRIVER WITH ON-CHIP KEY INPUT TC9297F/FB are an LCD driver 1C with on-chip key input, which is serial data controlled. FEATURES • Supports switching between 1/2 and 1/3 duty, and


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    PDF TC9297F/FB TC9297F, TC9297FB TC9297F/FB TC9297F QFP60-P-1414-0 s36-s39 QFP64-P-1212-0 S3551 bl s37 s35 lcd TC9297F TC9297FB

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC74HC597AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr7AHrRQ7AP T C I A U C W I A P m • m m m wr m m ma g m mut m m m m m m u f íbF » * ma 8 -B IT LATCH /SHIFT REGISTER The TC74HC597A is a high speed CMOS 8-BIT PARALLELIN / SERIAL-IN SERIAL-OUT LA TCH /SH IFT REGISTER


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    PDF TC74HC597AP/AF TC74HC597A 16PIN DIP16-P-300-2 16PIN 200mil OP16-P-300-1

    0 to 99 led display using two 7 segment displays

    Abstract: TC5001 TLG324 7 SEGMENT DISPLAY basic CIRCUIT 2 digit led TC5070 Seven-Segment Numeric
    Text: TOSHIBA 8. [3 ] Explanations LED Display 8.1 LED Display Characteristics The following description is based on a typical 2-digit LED display TLG324 with characters 12.7 mm high. The characteristics are very similar to those of LED lamps. However, as the display includes many LED pellets in one package, there are some


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    PDF TLG324) 0 to 99 led display using two 7 segment displays TC5001 TLG324 7 SEGMENT DISPLAY basic CIRCUIT 2 digit led TC5070 Seven-Segment Numeric

    TA8654N

    Abstract: TRF1060 TA8654
    Text: TOSHIBA TENTATIVE Unit: itim 1-CHIP NTSC C T V SYSTEM TA8654N combines all the functions ' required for an NTSC color TV system in a 64-lead, dual-in-line shrink-type 1.78 mil plastic package. This device is designed to offer wide capability of application from fundamental CTV to a


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    PDF TA8654N 64-lead, TA8654N 57PIN. TRF1060 TA8654

    TC86R4400M

    Abstract: No abstract text available
    Text: TOSHIBA TC86R4400 3.45V 64-bit RISC Microprocessor Description The Toshiba TC86R4400 family consists of high-performance 64-bit RISC microprocessors that deliver excellent processing solutions over a wide variety of applications and prices. Sys­ tems applications for this family range from inexpensive,


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    PDF TC86R4400 64-bit 64-bit R4400 TC86R4400M

    597A

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC597AP/AF 8-Bit Latch/Shift Register 3-State The TC74HC 597A is a high speed CMOS 8-BIT PARALLELIN/SERIAL-IN SERIAL-OUT LATCH/SHIFT REGISTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


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    PDF TC74HC597AP/AF TC74HC 597A

    a5c5

    Abstract: mark K13 JT6M74A-AS T6M74A mk 74a ASSIGNMENT64 s4 74a
    Text: TOSHIBA T6M 74AJT6M 74A-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6M74A, JT6M74A-AS T6M74A, JT6M74A-AS CM OS SINGLE-CHIP LSI FOR LCD CALCULATOR The T6M74A, JT6M74A-AS is a CMOS single-chip microcomputer for 16-digit 1 -memory calculator.


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    PDF T6M74AJT6M74A-AS T6M74A, JT6M74A-AS JT6M74A-AS 16-digit a5c5 mark K13 T6M74A mk 74a ASSIGNMENT64 s4 74a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7232G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.


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    PDF 432-WORD 72-BIT THMY7232G1 EG-80# THMY7232G1EG TC59SM708FT/FTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY723281 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY723281EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY723281 EG-80f-10 432-WORD 72-BIT THMY723281EG TC59SM708FT/FTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit

    hitachi FM stereo MPX Decoder

    Abstract: QFP80 QFP80-P-1420-0 SDIP64 SDIP64-P-750-1 TC90A35F TC90A35N OSC11 44HEX
    Text: TOSHIBA TENTATIVE TC90A35N/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUITS SILICON MONOLITHIC TC90A35N, TC90A35F N ICA M /IG R AUDIO SIGNAL PROCESSORS These LSIs are designed to decode PCM and FM aural signals in UK sound multiplex broadcasts NICAM728 . In addition, they also can decode IGR sound multiplex


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    PDF TC90A35N/F TC90A35N, TC90A35F NICAM728) TC90A35N) TC90A35N/F TC90A35F) hitachi FM stereo MPX Decoder QFP80 QFP80-P-1420-0 SDIP64 SDIP64-P-750-1 TC90A35F TC90A35N OSC11 44HEX