C26 MARKING Search Results

PBT GF20 AMP

Contextual Info: r n 4 THIS DRAWING IS UNPUBLISHED. DIFFUSION RE5TREINTE AMP P 2 3 RELEASED FOR PUBLICATION DIFFUSION PUBLIQUE ALL RIGHTS RESERVED. BY AMP INCORPORATED. TOUS DROITS RESERVES. COPYRIGHT 19 L0C ,19 F COUPE EE +C + 1 1 . 27 40„2-0„4 4 m o CO. 6 3 ) T Y P C26)

5400K

Contextual Info: DATA SHEET 1/10 1. Scope of Application This data sheet is applied to the chip type LED lamp , model CL-L330-C26N-C 2. Part code CL-L330- C26N-C Series L330 : White power LED for general lighting. Watt Class C26 : 26 watt package. Lighting color N : Correlated Color Temperature 5000K

Contextual Info: DATA SHEET 1/10 1. Scope of Application These specifications are applied to the chip type LED lamp , model CL-L330-C26N-C 2. Part code CL-L330- C26N-C Series L330 : White power LED for general lighting. Watt Class C26 : 26 watt package. Lighting color N : Correlated Color Temperature 5000 K

Contextual Info: DATA SHEET 1/10 1. Scope of Application This data sheet is applied to the chip type LED lamp , model CL-L330-C26N-C 2. Part code CL-L330- C26N-C Series L330 : White power LED for general lighting. Watt Class C26 : 26 watt package. Lighting color N : Correlated Color Temperature 5000K

Hmc597lp4

Abstract: demodulator frequency demodulator multi-band radio frequency HMC597LP4E C2668
Contextual Info: HMC597LP4 / 597LP4E v03.0907 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G High Integration: On-Chip RF Balun

Contextual Info: HMC597LP4 / 597LP4E v05.0712 DemoDulators - smt SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features the HmC597lP4 / HmC597lP4e is suitable for various modulation systems: High linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G

HMC597LP4

Abstract: HMC597LP4E Evaluation PCB 115775 4000 watts amplifier schematic diagram with part 4000 watts power amplifier pcb circuit diagram
Contextual Info: HMC597LP4 / 597LP4E v03.0907 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G High Integration: On-Chip RF Balun

Evaluation PCB 115775

Abstract: gsm demodulator 597L H-597 hmc597lp4
Contextual Info: HMC597LP4 / 597LP4E v02.0607 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G High Integration: On-Chip RF Balun

Evaluation PCB 115775

Abstract: QFN PACKAGE thermal resistance
Contextual Info: HMC597LP4 / 597LP4E v05.0712 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G

Contextual Info: HMC597LP4 / 597LP4E v06.0613 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G

Contextual Info: HMC597LP4 / 597LP4E v07.1213 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +23 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G

diode marking code c34

Abstract: AP561 cdm 12.1 laser
Contextual Info: AP561 0.7-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 12.5 dB Gain • 1.5% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AP561-PCB2500

Abstract: AP561 AP561-F JESD22-A114
Contextual Info: AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 2.3 – 2.9 GHz • +39 dBm P1dB • 13.8 dB Gain • 1.4% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage

K 2645 schematic circuit

Abstract: diode t25 4 j3 776MHz AP561-PCB900 AP561-PCB2500
Contextual Info: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout • +12 V Supply Voltage • Lead-free/green/RoHS-compliant 5x6 mm power DFN package Applications

C38 diode

Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Contextual Info: HMC597LP4 / 597LP4E v01.0307 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G High Integration: On-Chip RF Balun

AP561-F

Abstract: AP561 AP561-PCB2500 cpe wimax AP601
Contextual Info: AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 12 dB gain, while being able to achieve high

z15 Diode glass

Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

cdma800

Abstract: DCS1800 GSM900 RF3809 RF3809PCK-410 RF3809PCK-411 RF3809PCK-412 DCS-1800MHz RF3809PCK-415
Contextual Info: RF3809 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications

AP561-F

Contextual Info: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout • +12 V Supply Voltage • Lead-free/green/RoHS-compliant 5x6 mm power DFN package Applications

0 DFN triquint

Abstract: rf power amplifier transistor with s-parameters rf power amplifier with S Parameters AP561 AP561-F AP561-PCB2500 JESD22-A114 AP561-PCB2140 AP561-PCB900 450ma12
Contextual Info: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage

BTS 3900

Abstract: OFC20 AP561 AP561-F AP561-PCB2500 JESD22-A114
Contextual Info: AP561 0.7-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 Gain • 1.5% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage

J042

Contextual Info: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these