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    C25 DIODE TO220 Search Results

    C25 DIODE TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    C25 DIODE TO220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C


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    PDF 7N60CD1 O-220AB O-263

    10n60b

    Abstract: 10n60b2d1
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 10N60B2D1 IC110 8-06B 405B2 10n60b 10n60b2d1

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 10N60B2D1 IC110 8-06B 405B2

    IXGP12N60U1

    Abstract: diode fr 307
    Text: Preliminary data IXGP12N60U1 VCES Low VCE sat IGBT with Diode IC VCE(sat) Combi Pack Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 24 A I C90


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    PDF IXGP12N60U1 IXGP12N60U1 diode fr 307

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    IXA12IF1200HB

    Abstract: No abstract text available
    Text: IXA12IF1200HB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200HB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-247 ● Easy paralleling due to the positive temperature


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    PDF IXA12IF1200HB O-247 60747and 20110330a IXA12IF1200HB

    Untitled

    Abstract: No abstract text available
    Text: IXA12IF1200HB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200HB 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-247 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage


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    PDF IXA12IF1200HB 60747and 20110330a

    IXA12IF1200PB

    Abstract: No abstract text available
    Text: IXA12IF1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200PB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature


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    PDF IXA12IF1200PB O-220 60747and 20110330a IXA12IF1200PB

    Untitled

    Abstract: No abstract text available
    Text: IXA12IF1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200PB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature


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    PDF IXA12IF1200PB O-220 60747and 20110330a

    Untitled

    Abstract: No abstract text available
    Text: IXA12IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200TC 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage


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    PDF IXA12IF1200TC 60747and 20110330a

    Untitled

    Abstract: No abstract text available
    Text: IXA20IF1200HB XPT IGBT VCES = 1200 V I C25 = 38 A VCE sat = 1.8 V Copack Part number IXA20IF1200HB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-247 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage


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    PDF IXA20IF1200HB O-247 60747and 20100102a

    IXYS DATE CODE

    Abstract: No abstract text available
    Text: IXA12IF1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200PB 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage


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    PDF IXA12IF1200PB 60747and 20110330a IXYS DATE CODE

    IXA12IF1200TC

    Abstract: No abstract text available
    Text: IXA12IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE sat = 1.8 V Copack Part number IXA12IF1200TC Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature


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    PDF IXA12IF1200TC O-268AA 60747and 20110330a IXA12IF1200TC

    RL-1282-33-43

    Abstract: RL-1283-10-43 RL-1282-47-43 RL-1283-33-43 LM2678-ADJ Nichicon code WV LM2678 LM2678S-12 LM2678S-ADJ renco- 47 uH, L39, Renco, Through Hole
    Text: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to


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    PDF LM2678 LM2678 260KHz) RL-1282-33-43 RL-1283-10-43 RL-1282-47-43 RL-1283-33-43 LM2678-ADJ Nichicon code WV LM2678S-12 LM2678S-ADJ renco- 47 uH, L39, Renco, Through Hole

    RL-1282-33-43

    Abstract: renco- 47 uH, L39, Renco, Through Hole RL-1283-33-43 RL-1283-10-43 RL-1282-47-43 RL6050-33 RL6050-22 RL6050-68 LM2678-ADJ KEMET T495 Series
    Text: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to


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    PDF LM2678 LM2678 260KHz) RL-1282-33-43 renco- 47 uH, L39, Renco, Through Hole RL-1283-33-43 RL-1283-10-43 RL-1282-47-43 RL6050-33 RL6050-22 RL6050-68 LM2678-ADJ KEMET T495 Series

    C1608X7R1H104KT

    Abstract: K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic
    Text: AND8106/D 100 Watt, Universal Input, PFC Converter ON Semiconductor http://onsemi.com APPLICATION NOTE General Description This 100 watt converter demonstrates the wide range of features found on the NCP1650. This chip is capable of controlling PFC converters well into the kilowatt range.


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    PDF AND8106/D NCP1650. C1608X7R1H104KT K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic

    LM2678-12

    Abstract: LM2678-ADJ Nichicon c9 Capacitor DO5022P-103HC zener diode 1282 LM2678 LM2678S-12 LM2678S-ADJ
    Text: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to


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    PDF LM2678 LM2678 260KHz) LM2678-12 LM2678-ADJ Nichicon c9 Capacitor DO5022P-103HC zener diode 1282 LM2678S-12 LM2678S-ADJ

    LM2678

    Abstract: LM2678S-12 LM2678S-ADJ LM2678T-12 LM2678T-ADJ LM2678-ADJ LM26781 lm2678a
    Text: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to


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    PDF LM2678 LM2678 260KHz) LM2678S-12 LM2678S-ADJ LM2678T-12 LM2678T-ADJ LM2678-ADJ LM26781 lm2678a

    12N100U1

    Abstract: T9lc 12N100AU1
    Text: V CES LowVCE sat IGBT with Diode High speed IGBT with Diode IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Sym bol Test C onditions VCES Tj = 25°C to 150°C 1000 V Vco* Tj = 25°C to 150°C; RGE = 1 M il 1000 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25


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    PDF IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 standard03 K38Ts 12N100U1 T9lc 12N100AU1

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data IXGP12N60U1 Low V 'c IGBT with Diode V C E sat Combi Pack Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A U 90 Tc = 9 0 °C 12 A ^CM Tc = 25°C, 1 ms


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    PDF IXGP12N60U1

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


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    PDF 12N60CD1

    Untitled

    Abstract: No abstract text available
    Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90


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    PDF P12N100AU1

    C25 diode

    Abstract: GE 0270
    Text: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU


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    PDF 12N60CD1 12N60CD1 O-220 O-263 C25 diode GE 0270