C2458 NPN Search Results

C2458 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

C2458 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c2458 Abstract: c2458 npn C2458 bl c2458 gr Text: fr C2458 HUANDONG ELECTRO N ICS —NPN silicon — • ■±SWÌÉ: T a= 25°C ft ^ nr â UM îmmXffîfei I M feiä T'- & VcBO 50 V VcEO 50 V V ebo 5 V Ic 150 mA M m & m Pc 200 mW SE Tj 150 Tstg nr M (Ta=25°C ) V - 55-150 °C ft ^ m ¡M MX1Ê. M'hiS	OCR Scan	PDF	C2458 55MAX 100mA, c2458 c2458 npn C2458 bl c2458 gr

Catalog Datasheet

MFG & Type

PDF

Document Tags

c2458

Abstract: c2458 npn C2458 bl c2458 gr
Text: fr C2458 HUANDONG ELECTRO N ICS —NPN silicon — • ■±SWÌÉ: T a= 25°C ft ^ nr â UM îmmXffîfei I M feiä T'- & VcBO 50 V VcEO 50 V V ebo 5 V Ic 150 mA M m & m Pc 200 mW SE Tj 150 Tstg nr M (Ta=25°C ) V - 55-150 °C ft ^ m ¡M MX1Ê. M'hiS

OCR Scan

PDF

C2458 55MAX 100mA, c2458 c2458 npn C2458 bl c2458 gr