C221 TRANSISTOR Search Results

Transistor C221

Abstract: c221 TRANSISTOR transistor NPN c221 STC221F C221
Contextual Info: STC221F NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High current application Features • High hFE : hFE=160~320 • Low collector saturation voltage : VCE sat =0.5V(MAX.) SOT-89 Ordering Information Type No. Marking

Transistor c221

Contextual Info: STC221F NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High current applicat ion Features • High h FE : h FE= 160~ 320 • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) SOT-89 Ordering Information

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

RF Power Transistors

Abstract: SEF420
Contextual Info: G S-T HOMSQN D7E D 73 C Ï749Q SEF420 SEF421 SEF422 SEF423 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS

TL235

Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
Contextual Info: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz

transistor c237

Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include

TRANSISTOR tl131

Abstract: tl239
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include

Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,

PTFB093608

Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
Contextual Info: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

PTFB093608

Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

J103 transistor

Abstract: transistor c223
Contextual Info: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced

TL250

Abstract: TL239
Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,

TL145

Abstract: TL245 transistor c111 C216 TL152
Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

Contextual Info: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"

Diode C219

Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Contextual Info: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”

Diode C219

Abstract: resistance 220 ohm diode 1n6
Contextual Info: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"

epc19 bobbin

Abstract: 6X1220R D2PAK-6 Proportional solenoid driver 72vdc schematic diagram r222 1kv capacitor R221 1kv
Contextual Info: FS6X0420RJ/ FS6X0720RJ/ FS6X1220RJ Fairchild Power Switch FPSTM Features Description • Current Mode PWM Control with a Fixed Operating Frequency (300kHz) The FS6X-Series is specially designed for off-line DC-DC converters with minimal external components. This device combines a current

6X1220R

Abstract: Proportional solenoid driver Transistor C221 AN4137 c221 TRANSISTOR 22uF 50V electrolytic capacitor EPC19 epc19 bobbin an4141 r222 1kv
Contextual Info: FS6X0420RJ/ FS6X0720RJ/ FS6X1220RJ Fairchild Power Switch FPS Features Description „ Current Mode PWM Control with a Fixed Operating Frequency (300kHz) The FS6X-Series is specially designed for off-line DC-DC converters with minimal external components. This device combines a current mode PWM controller with a high voltage power

transistor C143

Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
Contextual Info: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999

HC221A

Abstract: HC221T 74ls221 circuits diagram HC221 c221 TRANSISTOR
Contextual Info: r = 7 SGS-THOMSON Ä 7 # RÆOMômtEOTts*! M54HC221/221A M74HC221/221A DUAL MONOSTABLE MULTIVIBRATOR • HIGHSPEED tpD = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 |iA (MAX.) AT Ta=25"C ACTIVE STATE Ice = 700 |iA (MAX.) AT Vcc=5V

Contextual Info: HIGH VOLTAGE POW ER OPERATIONAL AMPLIFIERS A p è x M I C R O T E C H N O L O C V PA89 •PA89A HTTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • 1140V P-P SIGNAL OUTPUT WIDE SUPPLY RANGE — +75V to +600V PROGRAMMABLE CURRENT LIMIT

transistor SMD p41

Abstract: transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint
Contextual Info: Item Number 1 2 3 4 5 6 7 8 Quantity 1 11 3 6 4 1 9 2 Value 220uF 0.1uF 1nF 100uF TANT 0.1uF 10nF 100pF 1nF Description 220uF 10V TPSE227K10R0100 X7R 0.1uF 25V 0805 X7R 1nF 50V 0805 TANT 100UF 16V X7R 0.1uF 25V 0805 X7R 10nF 25V 0805 COG 100pF 50V 0805 X7R 1nF 50V 0805

MMA0204-50

Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
Contextual Info: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .

a744s

Abstract: A744 DCU 0805 l141 wima MKS-4 BUF C145 c143 C143 T transistor Transistor C221 SLAA114
Contextual Info: Application Report SLEA043 – January 2005 TAS5028-5122C6EVM Application Report Jonas Svendsen Digital Audio & Video Products ABSTRACT The TAS5028-5122C6EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5028APAG and TAS5122DCA from Texas Instruments.