TQ3131
Abstract: TQ5131
Text: WIRELESS COMMUNICATIONS DIVISION TQ3131 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN 3V Cellular Band CDMA/AMPS LNA IC RF 50 ohm OUT RF Out GND C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description
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TQ3131
OT23-8
TQ3131
IS-95
TQ5131
800MHz
TQ5131
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TQ3631
Abstract: TQ3632 TQ5631 TQ5633
Text: WIRELESS COMMUNICATIONS DIVISION TQ3632 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN Low Current, 3V PCS Band CDMA LNA IC RF 50 ohm OUT RF Out LNA gnd C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description
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TQ3632
OT23-8
TQ3632
IS-95
TQ5631
TQ5633
1900MHz
TQ3631
TQ5633
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TQ3132
Abstract: TQ5131 TQ5132 triquint LNA
Text: WIRELESS COMMUNICATIONS DIVISION C2 Control Logic TQ3132 L1 C2 VDD GND GND RF IN DATA SHEET Low Current, 3V Cellular Band CDMA/AMPS LNA IC RF 50 ohm OUT RF Out GND C3 Control Logic Features Small size: SOT23-8 Single 3V operation Product Description Low-current operation
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TQ3132
OT23-8
TQ3132
IS-95
TQ5131
TQ5132
800MHz
TQ5132
triquint LNA
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TQ3631
Abstract: TQ5631
Text: WIRELESS COMMUNICATIONS DIVISION TQ3631 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN 3V PCS Band CDMA LNA IC RF 50 ohm OUT RF Out LNA gnd C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description Gain Select
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TQ3631
OT23-8
TQ3631
IS-95
TQ5631
1900MHz
TQ5631
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IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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BCW30
Abstract: C212
Text: SEMICONDUCTOR BCW30 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C2 1 2 Item Marking Description Device Mark C2 BCW30 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BCW30
OT-23
BCW30
C212
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CBVK741B019
Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
CBVK741B019
F63TNR
L86Z
MMPQ2907
NDM3000
NDM3001
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
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MMPQ2907
Abstract: SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
SOIC-16
MMPQ2907
SOIC-16
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NCS2500
Abstract: NCS2502 video amplifier SOT23-6 8678 sot23-5 AD8057 AD8038 AD8055 TSH341 NJM2711 22MF 470MF NCS2501 NCS2510 NCS2511
Text: Vs+ Vs+ Rm | Rg = 757 C2 10n U1 IN Rf1 R1 Rm R2 Rg2 R1 75 C4 10n VsZ = 1007 CAT-5 R2 Rg2 OUT 757 COAXIAL CABLE DRIVER C3 10n U2 Rf2 R3 75 Rg VsVs+ OUT 75 Rf 50 C2 10n R3 Rg1 R2 U2 IN R4 C3 10n Vs+ R5 50 C4 10n VsDIFFERENTIAL LINE DRIVER C1 0.2Mn C3 10n
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VsC17
NCS2500
200UBLICATION
BRD8052-1
BRD8052/D
NCS2500
NCS2502
video amplifier SOT23-6
8678 sot23-5
AD8057 AD8038 AD8055 TSH341 NJM2711
22MF
470MF
NCS2501
NCS2510
NCS2511
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2N3904 SOT-23
Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
Text: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to
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2N3904
MMBT3904
OT-23
MMPQ3904
PZT3904
SOIC-16
OT-223
2N3904
MMBT3904
MMPQ3904
2N3904 SOT-23
mark E4 SOT-23
MMBT3904 1A
2n3904 transistor
2N3904 equivalent
2n3904 data sheet
2N3904 die
FAIRCHILD SOT-223 MARK
h 2n3904
switch fairchild
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BCW29R
Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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BCW29
BCW30
BCW29
BCW30
BCW29R
BCW30R
BCW31
BCW32
MV SOT23
PARTMARKING MV
BCW31
BCW32
720 sot23
DSA003672
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Untitled
Abstract: No abstract text available
Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter
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SMBD7000/
MMBD7000
VPS05161
EHA07005
MMBD7000
EHB00137
EHB00138
Feb-18-2002
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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Untitled
Abstract: No abstract text available
Text: SMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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SMBD7000
EHA07005
VPS05161
Jul-31-2001
EHB00137
EHB00138
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Text: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
VPS05161
EHA07005
EHB00076
EHB00077
Jul-30-2001
EHB00078
BAV99
free pdf transistor a7s
bav99 marking
diode bav
A2 SOT23
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ZXTC2045E6TC
Abstract: No abstract text available
Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information
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ZXTC2045E6
OT23-6
OT236
ZXTC2045E6TA
ZXTC2045E6TC
ZXTC2045E6TC
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DUAL NPN SOT23-6
Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information
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ZXTC2045E6
OT23-6
OT236
ZXTC2045E6TA
ZXTC2045E6TC
DUAL NPN SOT23-6
NPN SOT23-6
320 sot236
ZXTC2045E6TA
marking E1 sot236
Surface mount NPN/PNP complementary transistor
ZXTC2045E6
ZXTC2045E6TC
MOSFET sot23-6
SOT23-6, complementary transistors
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BAV199
Abstract: marking jys jys diode
Text: BAV199 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol
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BAV199
VPS05161
EHA07005
EHB00086
Aug-20-2001
EHB00087
BAV199
marking jys
jys diode
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BAW156
Abstract: No abstract text available
Text: BAW156 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW156
VPS05161
EHA07006
EHB00107
Aug-20-2001
EHB00108
BAW156
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730116
Abstract: deutsch coax socket non-inverting amplifier sot23-6 layout SOT23-6 package CLC730116
Text: SOT23-6 Op Amp Evaluation Board Part Number CLC 730116 . Figure 2 illustrates the inverting schematic for the board. +V C C C2 + The CLC730116 evaluation board is designed to aid in the characterization of National’s 6-pin, monolithic amplifiers, that are available in the SOT23-6 package.
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OT23-6
CLC730116
730116
deutsch coax socket
non-inverting amplifier
sot23-6 layout
SOT23-6 package
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1N4148 SMD
Abstract: diode 1N4148 SMD TRANSISTOR C3225 TRANSISTOR SMD p1 resistor SMD footprint smd transistor p5 1n4148 smd diode 0603 smd resistor footprint smd transistor c6 1N4148 0603
Text: Designator Comment U1 TDE1708DFT U2 C1, C7 C2 Description Footprint LibRef SupplierName SupplierOrderCode Intelligent power switch DFN 4x4 TDE1708DFT STMicroelectronics TDE1708DFT ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers DFN8 10nF
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TDE1708DFT
100nF
B37941A1103K0*
B37941A5104K0*
B37931A5103K0*
10uF/6
B37931K0104K0*
1N4148 SMD
diode 1N4148 SMD
TRANSISTOR C3225
TRANSISTOR SMD p1
resistor SMD footprint
smd transistor p5
1n4148 smd diode
0603 smd resistor footprint
smd transistor c6
1N4148 0603
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BCW29R
Abstract: BCW30
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995_ PARTMARKING DETAILS - BCW29 BCW30 BCW29R BCW30R - C1 C2 C4 C5 COMPLEMENTARY TYPES - BCW29 - BCW31 BCW30 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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BCW29
BCW30
BCW29R
BCW30R
BCW30
BCW31
BCW32
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ZC930
Abstract: No abstract text available
Text: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0
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ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
C2/C20
50MHz
ZC830)
ZC930
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