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    C1Q TRANSISTOR Search Results

    C1Q TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1Q TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1R sot23

    Abstract: CMPT5088 CMPT5089
    Text: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5089 OT-23 20MHz C1R sot23 CMPT5088

    C1q TRANSISTOR

    Abstract: CMPT5088 CMPT5089 marking code R5 sot23 marking code "R5" sot23 C1R sot23
    Text: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    Original     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5089 CMPT5088: CMPT5089: OT-23 20MHz C1q TRANSISTOR CMPT5088 marking code R5 sot23 marking code "R5" sot23 C1R sot23

    C1R sot23

    Abstract: No abstract text available
    Text: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CMPT5088 CMPT5089 CMPT5088, OT-23 20MHz C1R sot23

    Untitled

    Abstract: No abstract text available
    Text: CMPT5088 CMPT5089 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal


    Original     		PDF CMPT5088 CMPT5089 CMPT5088 CMPT5089 CMPT5088: CMPT5089: OT-23 20MHz

    CMPT5088

    Abstract: CMPT5089
    Text: CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal


    Original     		PDF CMPT5088 CMPT5089 CMPT5088 CMPT5089 CMPT5088: CMPT5089: OT-23 20MHz

    C1R sot23

    Abstract: No abstract text available
    Text: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    Original     		PDF CMPT5088 CMPT5089 OT-23 CMPT5088, CMPT5089 25oCMPT5089 20MHz C1R sot23

    513 s12

    Abstract: UPC2745T UPC2745T-E3
    Text: 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER FEATURES UPC2745T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 7.5 mA • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL 1.8 MIN • LOW POWER CONSUMPTION: 22.5 mW TYP 12 7.0 10 6.5


    Original     		PDF UPC2745T UPC2745T UPC2745T-E3 34-6393/FAX 513 s12 UPC2745T-E3

    UPC2745T

    Abstract: UPC2745T-E3
    Text: 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER FEATURES UPC2745T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 7.5 mA • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL 1.8 MIN • LOW POWER CONSUMPTION: 22.5 mW TYP 12 7.0 10 6.5


    Original     		PDF UPC2745T UPC2745T UPC2745T-E3 24-Hour UPC2745T-E3

    Untitled

    Abstract: No abstract text available
    Text: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5088: CMPT5089: OT-23 CP188 26-September

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5088: CMPT5089: OT-23 26-September

    C1R sot23

    Abstract: No abstract text available
    Text: Central CMPT5088 CMPT5089 Sem iconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


    OCR Scan     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5089 OT-23 CMPT508B 100hA 20MHz C1R sot23

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 - JANUARY 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV28 EF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 40 V ^CEO 30 V Em itter-Base Voltage V E BO 10 V Peak Pulse Current ' cm 800


    OCR Scan     		PDF BCV28 100mA, 100pA, --10mA, 20MHz width-300 FMMT38A

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


    OCR Scan     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5089 OT-23 20MHz

    CMPT5088

    Abstract: CMPT5089
    Text: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    OCR Scan     		PDF CMPT5088 CMPT5089 OT-23 CMPT5088, CMPT5089 CMPT5088 500uA, 20MHz

    Untitled

    Abstract: No abstract text available
    Text: Central CMPT5088 CMPT5089 Sem iconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    OCR Scan     		PDF CMPT5088 CMPT5089 CMPT5088, CMPT5089 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS318 LINEAR SYSTEMS LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES LOGCONFORMANCE re =1 TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted lc Collector Current 10mA M axim um Tem peratures Storage Temperature Range


    OCR Scan     		PDF LS318 250mW 500mW LS318

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS IT120A IT120 1T121 1T122 Linear integrated Systems MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 Ta= 25°C unless otherwise noted 10mA


    OCR Scan     		PDF IT120A IT120 1T121 1T122 250mW 500mW

    APT55GF60BN

    Abstract: No abstract text available
    Text: A D V A NC ED POWER TECHNOLOGY b lE 0 2 5 7 ^ 0 ^ o o G o a a a sb3 D I AV P A dvanced R o w er Te c h n o l o g y APT55GF60BN 600V 55A POWER MOS IV IGBT N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan     		PDF APT55GF60BN 15ent

    Untitled

    Abstract: No abstract text available
    Text: TEKTRONIX INC/ MELECS fllC D • 6^01,175 OOnOGl? O ■ T E ICH 'NfcrW QUICKCHIP 2 FAMILY OF INTEGRATED CIRCUIT ARRAYS The Q u ickC hip 2 integrated circuit substrates com p rise a fam ily of arrays of uncom m itted very high speed bipolar transistors, cap acito rs and


    OCR Scan     		PDF

    SMD MARKING CODE C2U

    Abstract: smd code marking C2G
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX


    OCR Scan     		PDF OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A BC857C BC858 BC858A SMD MARKING CODE C2U smd code marking C2G

    BC5578

    Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484


    OCR Scan     		PDF OT-23 350mW CMPT918 2N918 CMPT2222A 2N2222A CMPT2369 2N2369 CMPT2484 2N2484 BC5578 npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd

    BC5468

    Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
    Text: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.


    OCR Scan     		PDF OT-23 350mW CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3646 GMPT3904 CMPT3906 BC5468 SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840

    DS00594

    Abstract: 74LS CD4013B CD4013BC CD4013BCM CD4013BCN CD4013BCSJ M14A M14D MS-001
    Text: CD4013BC Dual D-Type Flip-Flop O ctober 1987 FAIRCHILD Revised January 1999 S E M IC D N D U C T O R IM CD4013BC Dual D-Type Flip-Flop General Description Features T he C D 4013B dual D -type flip-flop is a m onolithic com ple­ m entary M OS CMOS integrated circuit constructed with


    OCR Scan     		PDF CD4013BC CD4013B DS00594 74LS CD4013BC CD4013BCM CD4013BCN CD4013BCSJ M14A M14D MS-001

    SN76881N

    Abstract: television remote TMS9900 sn76881 amplifier 40khz tms 1000 INFRARED REMOTE CONTROL IC 14 pin
    Text: INFRA-RED REMOTE CONTROL RECEIVER Receiver for Infra-red Remote Control Systems VO CO Serial Data output drives directly into Microprocessor High Sensitivity nA signals give data 0/P Large Input Dynamic Range (95dB) High Overload Capability Versatility. Main Operating Parameters controlled


    OCR Scan     		PDF 40kHz) SN76881N television remote TMS9900 sn76881 amplifier 40khz tms 1000 INFRARED REMOTE CONTROL IC 14 pin