C1Q TRANSISTOR Search Results

C1R sot23

Abstract: CMPT5088 CMPT5089
Contextual Info: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

C1q TRANSISTOR

Abstract: CMPT5088 CMPT5089 marking code R5 sot23 marking code "R5" sot23 C1R sot23
Contextual Info: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

C1R sot23

Contextual Info: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: CMPT5088 CMPT5089 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

CMPT5088

Abstract: CMPT5089
Contextual Info: CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central" CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

C1R sot23

Contextual Info: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

C1R sot23

Contextual Info: Central CMPT5088 CMPT5089 Sem iconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 - JANUARY 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV28 EF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 40 V ^CEO 30 V Em itter-Base Voltage V E BO 10 V Peak Pulse Current ' cm 800

Contextual Info: Central" CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

CMPT5088

Abstract: CMPT5089
Contextual Info: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

Contextual Info: Ce n t r a 1 TM CMPT5088 CMPT5089 Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT5088, CMPT5089types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface

Contextual Info: Central CMPT5088 CMPT5089 Sem iconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

Contextual Info: LINEAR SYSTEMS IT120A IT120 1T121 1T122 Linear integrated Systems MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 Ta= 25°C unless otherwise noted 10mA

APT55GF60BN

Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE 0 2 5 7 ^ 0 ^ o o G o a a a sb3 D I AV P A dvanced R o w er Te c h n o l o g y APT55GF60BN 600V 55A POWER MOS IV IGBT N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: TEKTRONIX INC/ MELECS fllC D • 6^01,175 OOnOGl? O ■ T E ICH 'NfcrW QUICKCHIP 2 FAMILY OF INTEGRATED CIRCUIT ARRAYS The Q u ickC hip 2 integrated circuit substrates com p rise a fam ily of arrays of uncom m itted very high speed bipolar transistors, cap acito rs and

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

BC5578

Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484

BC5468

Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
Contextual Info: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.

513 s12

Abstract: UPC2745T UPC2745T-E3
Contextual Info: 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER FEATURES UPC2745T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 7.5 mA • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL 1.8 MIN • LOW POWER CONSUMPTION: 22.5 mW TYP 12 7.0 10 6.5

UPC2745T

Abstract: UPC2745T-E3
Contextual Info: 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER FEATURES UPC2745T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 7.5 mA • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL 1.8 MIN • LOW POWER CONSUMPTION: 22.5 mW TYP 12 7.0 10 6.5

DS00594

Abstract: 74LS CD4013B CD4013BC CD4013BCM CD4013BCN CD4013BCSJ M14A M14D MS-001
Contextual Info: CD4013BC Dual D-Type Flip-Flop O ctober 1987 FAIRCHILD Revised January 1999 S E M IC D N D U C T O R IM CD4013BC Dual D-Type Flip-Flop General Description Features T he C D 4013B dual D -type flip-flop is a m onolithic com ple­ m entary M OS CMOS integrated circuit constructed with

SN76881N

Abstract: television remote TMS9900 sn76881 amplifier 40khz tms 1000 INFRARED REMOTE CONTROL IC 14 pin
Contextual Info: INFRA-RED REMOTE CONTROL RECEIVER Receiver for Infra-red Remote Control Systems VO CO Serial Data output drives directly into Microprocessor High Sensitivity nA signals give data 0/P Large Input Dynamic Range (95dB) High Overload Capability Versatility. Main Operating Parameters controlled