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    C1815 POWER TRANSISTOR Search Results

    C1815 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1815 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor

    transistor c1815

    Abstract: c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815
    Text: C1815 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF C1815 OT-23 OT-23 C1815 100uA, 100mA, 30MHz transistor c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    C1815HF

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 30MHz C1815HF

    C1815 GR

    Abstract: C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE
    Text: C1815 C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF C1815 100mA, 30MHz C1815 GR C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE

    c1815 transistor

    Abstract: c1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz c1815 transistor c1815 gr

    c1815 gr

    Abstract: Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz c1815 gr Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF C1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60


    Original     		PDF C1815 100mA, 30MHz

    C1815 GR

    Abstract: OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors
    Text: C1815 NPN Plastic-Encapsulate Transistors P b Lead Pb -Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF C1815 O--92 100mA, 30MHz 23-Nov-06 C1815 GR OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR（ NPN ） 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60


    Original     		PDF C1815 30MHz 270TYP 050TYP

    C1815 GR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz C1815 GR

    C1815 transistors

    Abstract: transistors c1815 C1815
    Text: C1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage


    Original     		PDF C1815 01-Jun-2002 C1815 transistors transistors c1815 C1815

    C1815 NPN Transistor

    Abstract: C1815 TO92
    Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92

    c1815 SOT-23

    Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
    Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		PDF C1815 OT-23 OT-23 MIL-STD-202E c1815 SOT-23 transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf

    c1815 gr h

    Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
    Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF C1815 c1815 gr h C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR

    C1815

    Abstract: 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor
    Text: C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 C B Top View 1 1 K Collector 2 E 2 3 MARKING: HF D F


    Original     		PDF C1815 OT-23 31-Dec-2009 C1815 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor

    2SC1815

    Abstract: NPN SILICON EPITAXIAL TRANSISTOR C1815
    Text: MCC           !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) NPN SILICON EPITAXIAL TRANSISTOR C1815

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 C1815 GR 2SC1815 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdat) 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 C1815 GR 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y

    pin configuration NPN transistor 2sc1815

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100mAdc, 10mAdc) 310mAdc) 10Vdc, 30MHz) pin configuration NPN transistor 2sc1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 A1015 C1815 -10mA 30MHz