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    C18 5T Price and Stock

    Rochester Electronics LLC UC185TD-ADJ

    IC REG LINEAR ADJ LDO REGULATOR
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    DigiKey UC185TD-ADJ Bulk 38
    • 1 -
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    • 100 $8.08
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    Microchip Technology Inc PIC18LF4525-I/PT

    8-bit Microcontrollers - MCU 48KB 3968 RAM 36I/O
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    Mouser Electronics PIC18LF4525-I/PT 5,889
    • 1 $7.52
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    KEMET Corporation C320C185K5N5TA91707301

    Multilayer Ceramic Capacitors MLCC - Leaded 50V 1.8uF X8L 10% LS=2.54mm AECQ2
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    Mouser Electronics C320C185K5N5TA91707301 4,415
    • 1 $0.81
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    Microchip Technology Inc PIC18F4685T-I/PT

    8-bit Microcontrollers - MCU 96KB FL 3328bytes RAM 36I/O
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    Mouser Electronics PIC18F4685T-I/PT 3,370
    • 1 $11.45
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    Microchip Technology Inc PIC18F4455-I/PT

    8-bit Microcontrollers - MCU 24kBF 2048RM FSUSB2
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    Mouser Electronics PIC18F4455-I/PT 2,607
    • 1 $6.6
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    Find more C18 5T price and stock on Findchips.com

    C18 5T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C185T Powerex 900V V[drm] Max., 250A I[T] Max. Silicon Controlled Rectifier Scan PDF

    C18 5T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PIC18 example C18 codes

    Abstract: PIC18F4620 PWM example code 18F4620 ds51288 PIC18F452 PWM example codes picdem 2 plus using 18f452 examples 18f452 PIC18F452 Free Projects PIC18F452 macros examples PIC18f452 example codes
    Text: MPLAB C18 C COMPILER GETTING STARTED  2004 Microchip Technology Inc. DS51295C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		PDF DS51295C D-85737 NL-5152 DS51295C-page PIC18 example C18 codes PIC18F4620 PWM example code 18F4620 ds51288 PIC18F452 PWM example codes picdem 2 plus using 18f452 examples 18f452 PIC18F452 Free Projects PIC18F452 macros examples PIC18f452 example codes

    PIC18 example codes i2c

    Abstract: p18f8720 PIC18 example C18 codes mplab c18 library PIC18 example usart C18 codes hd44780 source code for eeprom 24LC PIC18 example codes sw_i2c PIC18 C18 codes usart PIC18 example C18 codes lcd
    Text: MPLAB C18 C COMPILER LIBRARIES  2003 Microchip Technology Inc. DS51297B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. •


    Original     		PDF DS51297B DK-2750 D-85737 DS51297B-page PIC18 example codes i2c p18f8720 PIC18 example C18 codes mplab c18 library PIC18 example usart C18 codes hd44780 source code for eeprom 24LC PIC18 example codes sw_i2c PIC18 C18 codes usart PIC18 example C18 codes lcd

    p18f4620

    Abstract: PIC18 example codes i2c PIC18 example C18 codes spi PIC18 example C18 codes lcd PIC18 example codes sw_i2c PIC18 example C18 codes PIC18 example C18 codes two device spi PIC18 example C18 codes i2c PIC18 example usart PIC18 C18 codes usart
    Text: MPLAB C18 C COMPILER LIBRARIES  2004 Microchip Technology Inc. DS51297C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. •


    Original     		PDF DS51297C D-85737 NL-5152 DS51297C-page p18f4620 PIC18 example codes i2c PIC18 example C18 codes spi PIC18 example C18 codes lcd PIC18 example codes sw_i2c PIC18 example C18 codes PIC18 example C18 codes two device spi PIC18 example C18 codes i2c PIC18 example usart PIC18 C18 codes usart

    TDK Ferrite Balun

    Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT

    mrfe6vp61k25h

    Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    ML9286-xxWA

    Abstract: vfd20 1T240-8
    Text: FEDL9286-01 Mar. 1, 2010 ML9286-xx Vacuum fluorescent display tube controller driver GENERAL DESCRIPTION The ML9286-xx is a 5 x 7 dot matrix type vacuum fluorescent display VFD tube controller driver IC which displays characters, numerics and symbols of a maximum of 20digits × 1 line.


    Original     		PDF FEDL9286-01 ML9286-xx ML9286-xx 20digits ML9286-xxWA vfd20 1T240-8

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    C18 5T

    Abstract: KNA21150C45UA KNA16150C35UA KNA16300C16MA KNA21300C15MA KNA16150 KNA16150C33MA KNA16200 KNA16200C25MA KNA16300
    Text: EMI Filter Array KNA16 Series Features • Distributed constant type LC filter. Prevents ringing caused by circuit impedance. • Stable noise attenuation over wide frequency range. • Small and low profile. • KNA16xxxUA Series realize sharp attenuation characteristics over the


    Original     		PDF KNA16 NA16xxxUA 470MHz 115pF KNA32 KNA32050 KNA32050C115DA KNA32075 KNA32075C82DA C18 5T KNA21150C45UA KNA16150C35UA KNA16300C16MA KNA21300C15MA KNA16150 KNA16150C33MA KNA16200 KNA16200C25MA KNA16300

    PTF141501E

    Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital


    Original     		PDF PTF141501E PTF141501F PTF141501E 150-watt, PTF141501E* PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6

    MRF6VP2600KH

    Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw

    MCP2120

    Abstract: pic16f84 tutorial TB048 AN756 MCP2150 DS21618 serial port to ttl using max232 MAX232 14 pin DS51246A
    Text: MCP2120/MCP2150 DEVELOPER’S KIT USER’S GUIDE Information contained in this publication regarding device applications and the like is intended by way of suggestion only. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with


    Original     		PDF MCP2120/MCP2150 D-81739 D-82152 DS51246A-page MCP2120 pic16f84 tutorial TB048 AN756 MCP2150 DS21618 serial port to ttl using max232 MAX232 14 pin DS51246A

    MW5IC2030NBR1

    Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 8, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original     		PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original     		PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 515D107M050BB6A