C1210X475K5RACTU Search Results

Contextual Info: KEMET Part Number: C1210X475K5RACTU C1210X475K5RAC7800 Capacitor, ceramic, 4.7 uF, +/-10% Tol, 50V, X7R, 1210 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

Contextual Info: C1210X475K5RACTU aka C1210X475K5RAC7800 Capacitor, ceramic, 4.7 uF, +/-10% Tol, 50V, X7R, 1210 Dimensions mm Specifications ID Dimension Tolerance L W T B 3.3 2.5 2.5 0.6 +/-0.4 +/-0.2 +/-0.2 +/-0.25 Manufacturer: Capacitance: Chip Size: Voltage: Temperature Coefficient:

C1210X475K5RAC7800

Contextual Info: C1210X475K5RACTU aka C1210X475K5RAC7800 Capacitor, ceramic, 4.7 uF, +/-10% Tol, 50V, X7R, 1210 Dimensions mm Specifications ID Dimension Tolerance L W T B 3.4 2.50 2.5 0.50 +/-0.4 +/-0.20 +/-0.2 +/-0.25 Manufacturer: Capacitance: Chip Size: Voltage: Temperature Coefficient:

Contextual Info: KEMET Part Number: C1210X475K5RACTU C1210X475K5RAC7800 Capacitor, ceramic, 4.7 uF, +/-10% Tol, 50V, X7R, 1210 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Contextual Info: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

SMD EZ 648

Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
Contextual Info: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

BLF888B

Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Contextual Info: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

Contextual Info: AN11325 2-way Doherty amplifier with BLF888A Rev. 01 — 14 November 2013 Application note Document information Info Content Keywords BLF888A, Doherty, DVB-T, UHF Abstract This document gives a description and measurement results of a 2-way Doherty amplifier using 2  BLF888A UHF LDMOS transistors.

907 TRANSISTOR smd

Contextual Info: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor l32

Abstract: SMD EZ 648 001aan207 BLF0510H6600P
Contextual Info: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor l31

Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

Contextual Info: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
Contextual Info: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

UT-090C-25

Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
Contextual Info: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

Contextual Info: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

SMD l33 Transistor

Contextual Info: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

Contextual Info: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

smd transistor L33

Abstract: transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2
Contextual Info: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 2 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog