Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FS
T1G4012036-FS
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mosfet j122
Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
del00
AGR09085EU
AGR09085EF
mosfet j122
AGR09085EF
J118 MOSFET
j122 mosfet
AGR09085EU
JESD22-C101A
RM73B2B120J
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Untitled
Abstract: No abstract text available
Text: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics
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T1G2028536-FL
T1G2028536-FL
TQGaN25HV
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Untitled
Abstract: No abstract text available
Text: T1G2028536-FS 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics
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T1G2028536-FS
T1G2028536-FS
TQGaN25HV
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transistor MARKING NC KRC
Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
AGR09130EU
AGR09130EF
transistor MARKING NC KRC
MARKING CODE c26
AGR09130EF
AGR09130EU
JESD22-C101A
amplifier copy machine
100B1R5BW
MOSFET marking Z4
marking code ACP
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mosfet j122
Abstract: J118 MOSFET j122 mosfet ALT500
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
iGR09085EF
DS04-055RFPP
DS04-028RFPP)
mosfet j122
J118 MOSFET
j122 mosfet
ALT500
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1812C105KAT2A
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems – General Purpose RF Power – Jammers – Radar – Professional radio systems – WiMAX – Wideband ampliiers
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T1G6000528-Q3
T1G6000528-Q3
1812C105KAT2A
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AGR09130E
Abstract: AGR09130EF AGR09130EU JESD22-C101A
Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
DS04-030RFPP
DS03-151RFPP)
AGR09130EF
AGR09130EU
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
delivering10-12,
DS04-055RFPP
DS04-028RFPP)
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Untitled
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
ca1212
DS04-028RFPP
DS03-057RFPP)
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PDF
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z921
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
c2000,
DS03-057RFPP
DS01-209RFPP)
z921
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RM73B2B
Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
DS04-154RFPP
DS04-030RFPP)
RM73B2B
gl 3201
AGR09130EF
AGR09130EU
JESD22-C101A
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PDF
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WZ150
Abstract: No abstract text available
Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
DS03-151RFPP
WZ150
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Untitled
Abstract: No abstract text available
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
TQGaN25
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1812C105KAT2A
Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101
Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers
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T1G6000528-Q3
T1G6000528-Q3
1812C105KAT2A
C1206C104KRAC7800
600L270
7737 transistor
CAPACITOR SPRAGUE 0149
Transistor s-parameter
600L270JT200
RO3210
RF Transistor s-parameter at 4GHz
J1101
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Z921
Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130EU
AGR09130EF
Z921
transistor MARKING NC KRC
MOSFET 930 06 ng
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Untitled
Abstract: No abstract text available
Text: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics
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T1G2028536-FL
T1G2028536-FL
TQGaN25HV
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AGR09085EF
Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Text: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
DS04-152RFPP
DS04-055RFPP)
AGR09085EF
AGR09085EU
JESD22-C101A
j122 mosfet
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FL
T1G4012036-FL
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JESD22-C101A
Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet
Text: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
DS04-199RFPP
DS04-152RFPP)
JESD22-C101A
AGR09085EF
AGR09085EU
ne 22 mosfet
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FL
T1G4012036-FL
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FS
T1G4012036-FS
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