C10A series
Abstract: GFM 15A 2N1777A solid state c10a RECTIFIER
Text: SCR CIO SERIES 2N1770A-2N1777A CIO Series 2N1770A-2N1777A Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load
|
OCR Scan
|
2N1770A-2N1777A
2N1770A-2N1777A)
2N1770A)
C10A series
GFM 15A
2N1777A solid state
c10a RECTIFIER
|
PDF
|
2n2619
Abstract: No abstract text available
Text: jG/nitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JE D E C 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N1770-78 2N2619 2N1600A2N1604A - - 2N1842-50 - 25-400 25-600 25-600
|
OCR Scan
|
C220-2
2N1770-78
2N2619
2N1600A2N1604A
2N1842-50
2N1770A
2N1846
2N1847
2N1603
C126C
2n2619
|
PDF
|
2N1602
Abstract: C220D c220e 2N1604 c220b 2N1601 scr 106 C 2N1842-50 SCR C220D 25600
Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information home | help | email Phase Control SCR's 7.4 - 25 Amp Military Product Products Quality Quote Request Value Added E-mail High Reliability *2N1771A-2N1778A and 2N2619A are available in Jan and Jantx Spec Sheet
|
Original
|
2N1771A-2N1778A
2N2619A
C220-2
2N1770-1778
2N1600A2N1604A
2N1842-50
2N1770A-
2N1846
2N1775A
2N1775
2N1602
C220D
c220e
2N1604
c220b
2N1601
scr 106 C
2N1842-50
SCR C220D
25600
|
PDF
|
SCR C220D
Abstract: scr C10 C220B C220D C126M C15U C123 SCR 2n1602 c220f C220E
Text: jemitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JEOEC 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N 1770-78 2N2619 2N 1600A2N1604A - - 2N 1842-50 - 25*400 25-600 25-600
|
OCR Scan
|
2N1770A
2N2619
1600A2N1604A
C220-2
1N1770
2N1771
2N1772
2N1773
2N1774
2N1775
SCR C220D
scr C10
C220B
C220D
C126M
C15U
C123 SCR
2n1602
c220f
C220E
|
PDF
|
SCR GE C20F
Abstract: scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B
Text: PHASE CONTROL SCR’s MEDIUM CURRENT 7.5 TO 25 AMPERES CIO GE TYPE CM 2N1770A-77A* 2N1770-78 JED EC C36 C31 -33 C l 22 — — — 2N1842-50 — — — C20-22 C3Q-32 C37 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE 25-400 25-600 25-600
|
OCR Scan
|
C20-22
C30-32
C31-33
2N1770A-77A*
2N1770-78
2N1842-50
2n1847
2N1776A
2N1776
2n1848
SCR GE C20F
scr C20F
scr c20d
ge c30b
GE C20F
GE C20B
GE scr C20f
GE SCR c20b
GE C1220 scr
GE C33B
|
PDF
|
SCR Applications Handbook
Abstract: SCR Handbook 2N1770A-2N1777A 2N1777A 2N1771A 2N1772A 2N1773A C10A scr 2N1770A C10A
Text: POWEREX INC B'ÎE I> • THTMbBl D0DS310 b H P R X cío r -*s -iz 2 N 17 7 0 A -2 N 1 7 7 7 A Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 P flS S B
|
OCR Scan
|
2N1770A-2N1777A
BP107
Amperes/25-400
GS31S
2N1770A-2N1777A
SCR Applications Handbook
SCR Handbook
2N1777A
2N1771A
2N1772A
2N1773A
C10A scr
2N1770A
C10A
|
PDF
|
S10BB
Abstract: 5 kv
Text: IRC series S10 Socket for Interface relay Type S10 1-pole, 1 connection level Logic wiring Integrated retaining clip and labelling space Coil bridge bar for A2, 11 Rated current 10 A Specifications Rated load Insulation – All terminals/DIN rail Contact terminals
|
Original
|
C10-A,
C10-T,
S10-BB
E-28923
S10BB
5 kv
|
PDF
|
B20G
Abstract: RELECO C10A C10G
Text: IRC series S10-M Socket for Interface relay Type S10-M I/O socket for IRC relays, 16A Logic connection , 2 x A2 Rated current 16 A Specifications Rated load Insulation – All terminals/DIN rail Contact / Coil terminals Cross-section of connecting wire – Single-wire
|
Original
|
S10-M
V10-G,
V10-E
V10-R
V10-A
B20-G,
B20-R
B20-A
E-28923
B20G
RELECO
C10A
C10G
|
PDF
|
zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
|
Original
|
110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
|
PDF
|
TY 1016 scr
Abstract: thyristor prxt
Text: POWEREX INC B'ÎE I> • THTMbBl D0DS310 b H P R X c í o r - * s - i z 2 N 17 7 0 A -2 N 1 7 7 7 A Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14
|
OCR Scan
|
D0DS310
BP107
Amperes/25-400
MAX/10
TY 1016 scr
thyristor prxt
|
PDF
|
SCR GE C20F
Abstract: scr c20d GE C20B GE C1220 scr GE scr C20f GE C33B C20D C32H GE SCR c20b scr C20F
Text: PH ASE C O N T R O L SCR’ s M EDIUM C U R R E N T 7.5 TO 25 A M P E R E S CIO G E T YPE CM 2N1770A-77A* 2N1770-78 JED EC C3Q-32 C37 Cl 22 — — — 2N1842-50 — — — C20-22 C36 C31 -33 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE
|
OCR Scan
|
C20-22
C30-32
C31-33
2N1770A-77A*
2N1770-78
2N1842-50
Z4XL12
Z4XL14
Z4XL16
Z4XL18
SCR GE C20F
scr c20d
GE C20B
GE C1220 scr
GE scr C20f
GE C33B
C20D
C32H
GE SCR c20b
scr C20F
|
PDF
|
1606-XLE120E
Abstract: 1606-xle80e fuse t6.3a 1606-XLE240EP 1606-XLE240E 1606-XLE 1606-XL CONDENSADORES T6.3A AL system donner
Text: 1 2 3 4 5 EN DE FR ES IT Instruction Manual Bedienungsanleitung Manual d'instructions Manual de instrucciones Manuale di Istruzione DC Power Supply DC Stromversorgung DC Alimentation d'Énergie DC Fuente De Alimentación DC Gruppo di alimentazione 6 PT Manual de Instruções
|
Original
|
1606-XLE
1606-XLE80E,
1606-XLE120xx
PN-22659
PU-360
38-10B
1606-XLE240xx
1606-XLE80E
1606-XLE120xx,
1606-XLE120E
1606-xle80e
fuse t6.3a
1606-XLE240EP
1606-XLE240E
1606-XLE
1606-XL
CONDENSADORES
T6.3A AL
system donner
|
PDF
|
IEC60068-2-30
Abstract: CS10 PU-360
Text: 1 2 3 4 5 6 EN DE FR ES IT PT Instruction Manual Bedienungsanleitung Manual d'instructions Manual de instrucciones Manuale di Istruzione Manual de Instruções DC Power Supply DC Stromversorgung DC Alimentation d'Énergie DC Fuente De Alimentación DC Gruppo di alimentazione
|
Original
|
PU-360
0-10A
241-S1
IEC60068-2-30
CS10
|
PDF
|
j1430
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372/D
MRF372
MRF372R5
j1430
|
PDF
|
|
|
diode t25 4 L8
Abstract: diode t25 4 HO
Text: MITSUBISHI TRANSISTOR M O D U LES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE • Ic • Vcex Collector current.15A Coliector-emitter voltage.1000V • hFE DC current gain . 75 • Insulated Type
|
OCR Scan
|
QM15TB-2H
E80276
E80271
diode t25 4 L8
diode t25 4 HO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372/D
MRF372
MRF372/D
|
PDF
|
balun 75 ohm
Abstract: C14A RO3010 MRF372 c9ab
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372/D
MRF372
balun 75 ohm
C14A
RO3010
MRF372
c9ab
|
PDF
|
marking c14a
Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372
marking c14a
RO3010
marking L4A
c7a series vishay capacitor
NTHS-1206J14520R5
bc16a
C15B
transistor D 863
vishay 1001
|
PDF
|
part marking information vishay HD 1
Abstract: l1a marking MRF372R5
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372
part marking information vishay HD 1
l1a marking
MRF372R5
|
PDF
|
R10B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R5
R10B
|
PDF
|
R4A marking
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R5
R4A marking
|
PDF
|
RO3010
Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372R3
MRF372R5
MRF372R3
MRF372
RO3010
marking c14a
marking R5b
device L1a marking
L1A marking on device
marking r4b diode
C14A
marking us capacitor pf l1
R4A print
MRF372
|
PDF
|
marking c14a
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
|
PDF
|
R16A3
Abstract: R18A2 r9a3 R18A1 R18A3 C38A r17a R16A1 thermaflo yageo RC0603FR-0710KL
Text: IRDC3622D USER GUIDE FOR DUAL OUTPUT IRDC3622D EVALUATION BOARD USING IRF6622 AND IRF6629 DIRECTFET MOSFETS Table of Contents Page 1 Description www.irf.com Board Features 1 Connections & Operating Instructions 2 Layout 5 Schematic 10 Bill of Materials 11
|
Original
|
IRDC3622D
IRDC3622D
IRF6622
IRF6629
RD-0621
IR3622
R16A3
R18A2
r9a3
R18A1
R18A3
C38A
r17a
R16A1
thermaflo
yageo RC0603FR-0710KL
|
PDF
|
