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    C102 VOLTAGE Search Results

    C102 VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4SL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2S5.6FS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Unidirectional, 3.5 V, SOD-923 Visit Toshiba Electronic Devices & Storage Corporation

    C102 VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C102

    Abstract: c102 voltage
    Text: Technical form: C102 Description: Technical characteristics: Cond Number Nominal Section 2 x 0,75 mm² Formation 24 x 0,20 External Dimension mm 2,2 x 4,5 Conductor Resistance Ohm/Km ±5% 32 Operative Temperature (°C) -15°/+70° Max operative Voltage V


    Original     		PDF

    C102 M

    Abstract: transistor c102 C102 M transistor C102 C102 transistor PDB-C102 c102 symbols
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33]


    Original     		PDB-C102 PDB-C102 10x10-14 100-PDB-C102 C102 M transistor c102 C102 M transistor C102 C102 transistor c102 symbols PDF

    transistor c102

    Abstract: C102 M C102 transistor c102 PDB-C102-I
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP


    Original     		PDB-C102-I PDB-C102-I transistor c102 C102 M C102 transistor c102 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP


    Original     		PDB-C102-I 10x10 100-PDB-C102-I PDF

    transistor c102

    Abstract: C102 transistor C102 c102 symbols c102 datasheet
    Text: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS CL 0.500 [12.70] MIN 45° CL Ø0.210[5.33] PHOTODIODE


    Original     		PDU-C102 PDU-C102 100-PDU-C102 transistor c102 C102 transistor C102 c102 symbols c102 datasheet PDF

    atm 194

    Abstract: No abstract text available
    Text: V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver with Isolated Stud Pins Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42−0.15) .292−.006 Optical Centerline (2) .080


    Original     		V23806-A8-C102 D-13623, atm 194 PDF

    Densei-Lambda PH50S

    Abstract: C102 transistor transistor c102 PH50S PH50S110
    Text: DENSEI-LAMBDA PH50S110 SPECIFICATION C102-01-01B MODEL ITEMS PH50S PH50S PH50S PH50S PH50S 110-5 110-12 110-15 110-24 110-28 1 Nominal Output Voltage V 5 12 15 24 28 2 Maximum Output Current A 10 4.2 3.4 2.1 1.8 W 50 50.4 51 50.4 50.4 % 80 82 83 84 84 0.55


    Original     		PH50S110 C102-01-01B PH50S 185VDC 110VDC 185VDC, Densei-Lambda PH50S C102 transistor transistor c102 PH50S PH50S110 PDF

    DC340V

    Abstract: korin
    Text: EPM2405SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 24V Rated load current 0.5A ■Electrical specification Ta=25℃ Item Specification Conditions・Note


    Original     		EPM2405SJ DC110ï DC140V, DC340V 100mV DC110Vï 250mV 240mVp-p 300mVp-p AC85Vï DC340V korin PDF

    Untitled

    Abstract: No abstract text available
    Text: EPM0310SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 3.3V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note


    Original     		EPM0310SJ DC110ï DC140V, DC340V DC110Vï 100mV 60mVp-p 100mVp-p AC85Vï AC276V PDF

    LF-4Z-E393

    Abstract: No abstract text available
    Text: EPM1210SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 12V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency


    Original     		EPM1210SJ DC110ï DC140V, DC340V 100mV DC110Vï 250mV 120mVp-p 150mVp-p AC85Vï LF-4Z-E393 PDF

    korin pj5h

    Abstract: LF-4Z-E363H
    Text: EPM1510SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 15V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency


    Original     		EPM1510SJ DC110ï DC140V, DC340V 100mV DC110Vï 250mV 150mVp-p 200mVp-p AC85Vï korin pj5h LF-4Z-E363H PDF

    Untitled

    Abstract: No abstract text available
    Text: EPM0510SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 5V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency


    Original     		EPM0510SJ DC110ï DC140V, DC340V DC110Vï 100mV 60mVp-p 100mVp-p AC85Vï AC276V PDF

    Untitled

    Abstract: No abstract text available
    Text: EPM1205SJ •入出力条件（Input-output condition） 項目 規格 Item Specification 入力電圧範囲 DC110～450V Input voltage range 定格入力電圧 DC140V, DC340V Rated input voltage 定格出力電圧 12V Rated output voltage 定格負荷電流


    Original     		EPM1205SJ DC110ï DC140V, DC340V 200mV 120mVp-p L/60Hz) D2SB60 LF-4Z-E333 PDF

    sff-8431

    Abstract: Transceivers
    Text: TRANSCEIVERS Product Specification Multirate up to 8.5GBd Limiting Transceivers TRX08GDP0410 General Description and Applications MergeOptics SFP+ LW is a multipurpose multi-rate optical transceiver module for transmission at 1310nm over single mode fiber. Supporting Fibre Channel standards make it ideally suited for storage area network applications. Its sub watt


    Original     		TRX08GDP0410 1310nm TRX08GDP041 TRX08GDP0410 C1-02, ELXTRX08GDP1110EA4 sff-8431 Transceivers PDF

    LM5020

    Abstract: R107 diode transistor c111 CRCW08054991FRT6 C105 Diode transistor C101 transistor c102 C107 C108 C103 c104
    Text: 1.0 Design Specifications Inputs Outputs #1 VinMin=-48 Vout1=13.5 VinMax=-48 Iout1=1.5 2.0 Design Description The LM5020 is employed here to design a Buck-Boost type power supply where the absolute value of the negative input voltage rail can be above or below the positive output voltage


    Original     		LM5020 CSP-9-111S2) CSP-9-111S2. LM5020 R107 diode transistor c111 CRCW08054991FRT6 C105 Diode transistor C101 transistor c102 C107 C108 C103 c104 PDF

    motorola D101

    Abstract: c2073 N101A motorola c105 WSL-2512-R012-F R012F ERIE CAPACITORS ERIE ceramic MAX767CAP transistor c102
    Text: 19-0224;Rev.3;7/00 MAX767 Evaluation Kit _Features The MAX767 evaluation kit EV kit is a fully assembled and tested printed circuit board for Maxim's synchronous, step-down power-supply controller. Providing a tightly regulated 3.3V output voltage from a 5V input


    Original     		MAX767 300kHz 20-Pin motorola D101 c2073 N101A motorola c105 WSL-2512-R012-F R012F ERIE CAPACITORS ERIE ceramic MAX767CAP transistor c102 PDF

    VR201

    Abstract: 10-14VDC PFE1000F pfe1000f-48 PFE1000 SW201 YC-251 VR202 PFE1000F-28 JEITA-9131B
    Text: PFE1000F Series Evaluation Board PFE1000F/EB Evaluation Board Instruction Manual and Electrical Characteristics _CAUTION ・Dangerous voltage 390V and high temperatures are present with the PFE Evaluation Board (unit) (unit). ・Avoid touching the unit during operation to avoid electric shock and possibility of being burned.


    Original     		PFE1000F PFE1000F/EB 100/200V 20ms/DIV 200us/DIV 130VAC 50mV/DIV 00V/DIV VR201 10-14VDC pfe1000f-48 PFE1000 SW201 YC-251 VR202 PFE1000F-28 JEITA-9131B PDF

    motorola D101

    Abstract: R012F n101a sanyo WG capacitors motorola d102 2C201 sanyo capacitor wg sanyo capacitor WF ERIE ceramic capacitor C101 Transistor
    Text: MAX767 Evaluation Kit _Features ♦ Fixed 3.3V Output Voltage ±4% ♦ Up to 1.5A and 5A Output Currents ♦ 120µA Standby Supply Current ♦ 700µA Quiescent Supply Current ♦ 300kHz Switching Frequency ♦ More than 90% Efficiency


    Original     		MAX767 300kHz 20-Pin MAX767EVKIT-SO motorola D101 R012F n101a sanyo WG capacitors motorola d102 2C201 sanyo capacitor wg sanyo capacitor WF ERIE ceramic capacitor C101 Transistor PDF

    C102 transistor

    Abstract: C103 transistor transistor c102 transistor C103 A80-A350X C102 C103 EPCOS 350 04
    Text: Surge Arrester 2-Electrode-Arrester A80-A350X Ordering code: B88069X2230xxxx a DC spark-over voltage 1) 2) 350 ± 20 V % < 700 < 650 V V < 900 < 800 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20


    Original     		A80-A350X B88069X2230xxxx 57845/VDE0845 C102 transistor C103 transistor transistor c102 transistor C103 A80-A350X C102 C103 EPCOS 350 04 PDF

    47C202

    Abstract: No abstract text available
    Text: TOSHIBA TLCS-47E Series TMP47P202V CMOS 4-Bit Microcontroller For program operation, the programming is achieved by using with EPROM programmer TMM27256AD type and adapter socket. The Function of this device is exactly same as the 47 C102/202. TMP47P202VP


    OCR Scan     		TLCS-47E TMP47P202V TMM27256AD C102/202. TMP47P202VP 47P202V 16Kbits 2048X DIP20 47C202 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver w ith Isolated Stud Pins Dimensions in mm inches V ie w Z (Lead cro ss section and s ta n d o ff size) (11.5 max) .453 max. (7.42-0.15) .2 9 2 -0 0 6 O p tic a !_


    OCR Scan     		V23806-A8-C102 D-13623, iconductor/products/37/376 PDF

    C102

    Abstract: diode c102 tr c102 C-102-B C-102-A
    Text: C-102 Series CLAROSTAT High CTR Optically Coupled Isolators SBBORS a comas cnoup Absolute Maximum Ratings TA = 25°C unless otherwise stated. Feature« 10KV I/O isolation very high current-transter-ratio (CTR) hermetically-sealed components UL listed replaces CLA65 family of isolators


    OCR Scan     		C-102 CLA65 100mA 300pps) CLA65AA C-102-B C-102-A C102 diode c102 tr c102 C-102-A PDF

    Untitled

    Abstract: No abstract text available
    Text: . 40E D 34=n?3fl 000124fl 4 S E N I FASCO INDS/ SENISYS ' •' • • —HJ uv V i.'J.-W -v,'- • ■■ . irj-iW.hVM't.i -4 1 -8 5 Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating Temperature. -55°G to +1 0 0*0


    OCR Scan     		000124fl CLA65 C-102 CLA65 CLA65AA C-102-B C-102-A PDF

    C102 M

    Abstract: c102 diode c102 CLA65 c 102 C-102-A C-102-B CLA65AA clairex C102B
    Text: 40E D 34=n?3fl aG0124fl 4 S E N I FASCO INDS/ SENISYS Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating to + 100*0


    OCR Scan     		T73fl C-102 CLA65 CLA65AA C-102-B C-102-A C102 M c102 diode c102 c 102 C-102-A CLA65AA clairex C102B PDF