microwave radio transmitter
Abstract: c-band transmitter GHz HPA 8510 NJT5655 NJT5660 New Japan Radio Co HPA C band c-band microwave transmitter
Text: C-band Transmitter 3.0W Type MODEL NO. NJT5655 C-band Transmitter 3.0W Type MODEL NO. NJT5660 <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable High Power Amplifier, and converts L Band 950 to 1,525 MHz or 960 to 1,265 MHz IF Input to C Band
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NJT5655
NJT5660
microwave radio transmitter
c-band transmitter
GHz HPA
8510
NJT5655
NJT5660
New Japan Radio Co
HPA C band
c-band microwave transmitter
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gsm module datasheet
Abstract: gsm antenna GSM Transceiver dcr RF transmitter datasheet GSM RF module processor EGSM900 SKY13306-313LF gsm module GSM Transceiver
Text: QUAD-BAND GSM/GPRS RF SUBSYSTEM WITH DCR TRANSCEIVER EGSM900 Rx: 925–960 MHz DCS1800 Rx: 1805–1880 MHz DCR EGSM900 Rx Switches C A I SKY13270-92LF SKY13309-370LF SKY13306-313LF SKY13268-344LF Transmitter Module Base Band Processor DCS1800 Rx B DCR C
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EGSM900
DCS1800
SKY13270-92LF
SKY13309-370LF
SKY13306-313LF
SKY13268-344LF
SKY74963
SKY77500
gsm module datasheet
gsm antenna
GSM Transceiver dcr
RF transmitter datasheet
GSM RF module
processor
SKY13306-313LF
gsm module
GSM Transceiver
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Untitled
Abstract: No abstract text available
Text: Surface Mount Band Pass Filter 50Ω BPF-A175+ 170 to 180 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.2:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC
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-55oC
100oC
BPF-A175+
HQ1157
2002/95/EC)
M110471
EDR-8491UF1
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EMM5074X
Abstract: emm5074
Text: EMM5074X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 32.5 dBm Typ. •High Linear Gain: GL = 28 dB(Typ.) •Broad Band: 5.8 - 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5074X is a wide band power amplifier MMIC that
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EMM5074X
EMM5074X
Item0158
1906B,
emm5074
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Untitled
Abstract: No abstract text available
Text: EMM5074X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 32.5 dBm Typ. •High Linear Gain: GL = 28 dB(Typ.) •Broad Band: 5.8 - 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5074X is a wide band power amplifier MMIC that
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EMM5074X
EMM5074X
CON0158
1906B,
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EMM5078X
Abstract: 70GHz EMM5078
Text: EMM5078X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 26 dBm Typ. •High Linear Gain: GL = 30 dB(Typ.) •Broad Band: 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5078X is a wide band power amplifier MMIC that
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EMM5078X
EMM5078X
D0158
1906B,
70GHz
EMM5078
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Untitled
Abstract: No abstract text available
Text: EMM5078X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 26 dBm Typ. •High Linear Gain: GL = 30 dB(Typ.) •Broad Band: 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5078X is a wide band power amplifier MMIC that
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EMM5078X
EMM5078X
COND0158
1906B,
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EMM5078X
Abstract: EMM5078 ED-4701
Text: Preliminary ES/EMM5078X C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5078X is a wide band power amplifier MMIC that
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ES/EMM5078X
ES/EMM5078X
1906B,
EMM5078X
EMM5078
ED-4701
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Untitled
Abstract: No abstract text available
Text: 300pin MSA 10Gb/s Transponder for DWDM Description • 300pin MSA compliant • Full C-band, Full L-band Tunable Transponder • ITU-T Grid 50GHz spacing Full-band Tunable • Lithium Niobate (LiNbO3) External Modulator integrated (Tunable type) • ITU-T Grid 50/100GHz spacing(DWDM)
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300pin
10Gb/s
50GHz
50/100GHz
953Gbps
OC-192/SDH
STM-64,
313Gbps
09Gbps
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EMM5074X
Abstract: power amplifier tone control r 161 705 000 ED-4701 EMM5074
Text: Preliminary ES/EMM5074X C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 32.5 dBm Typ. •High Gain; GL = 28 dB(Typ.) •Wide Frequency Band ; 5.8 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5074X is a wide band power amplifier MMIC that
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ES/EMM5074X
ES/EMM5074X
1906B,
EMM5074X
power amplifier tone control
r 161 705 000
ED-4701
EMM5074
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STM-16
Abstract: TO56 package Korea KLT TO-56 Kodenshi TO56 TO-56 package laser diode
Text: C-band InGaAsP strained MQW FP LD TO KLT-4CB413G Description KLT-4CB413G is long wavelength Fabry-Perot AR LD source in TO-56 package with flat window cap. KLT-4CB413G consists of an InGaAsP strained multi-quantum well MQW laser diode and an InGaAs PIN-PD for output monitoring. It at C-band(1529~1559 nm) wavelength band and with data rate of 1.25Gbps.
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KLT-4CB413G
KLT-4CB413G
25Gbps.
STM-16
TO56 package
Korea KLT
TO-56
Kodenshi
TO56
TO-56 package laser diode
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M97032
Abstract: M9703
Text: Coaxial NEW! Band Stop Filter NSBP-108 88 to 108 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band -55 C to 100 C -55oC to 100oC 0.5W at 25oC o
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-55oC
100oC
NSBP-108
FF967
Frequenc1000
NSBP-108
M97032
EDR-7403
M9703
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Untitled
Abstract: No abstract text available
Text: Surface Mount NEW! Band Pass Filter RBP-220 212 to 228 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC
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-55oC
100oC
RBP-220
GP731
Typica00
TB-332
PL-176)
RBP-220
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10858
Abstract: M9703
Text: Surface Mount NEW! Band Pass Filter RBP-275 268 to 282 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC
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-55oC
100oC
RBP-275
GP731
TB-332
PL-176)
RBP-275
M97032
10858
M9703
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Untitled
Abstract: No abstract text available
Text: Surface Mount Band Pass Filter 50Ω RBP-263+ 230 to 297 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.2:1 Typ @ Pass Band • Small Size 0.35" X 0.35"
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-55oC
100oC
RBP-263+
GP731
2002/95/EC)
TB-332
PL-176)
M107609
EDR-8342
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MCL 25
Abstract: GP731 RBP-650
Text: Surface Mount Band Pass Filter RBP-650+ 624 to 680 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •
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RBP-650+
-55oC
100oC
GP731
2002/95/EC)
2RBP-650+
M104389
EDR-7837AU
MCL 25
GP731
RBP-650
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7497
Abstract: RBP-160 GP731 mcl 0 120 M104389
Text: Surface Mount Band Pass Filter RBP-160+ 120 to 210 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.2:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •
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RBP-160+
-55oC
100oC
GP731
2002/95/EC)
M104389
EDR-7834AU
7497
RBP-160
GP731
mcl 0 120
M104389
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TB 6064
Abstract: BPF-A122
Text: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application
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BPF-A122+
-55oC
100oC
100oC
M102075
EDR-7824U
TB 6064
BPF-A122
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RBP-400
Abstract: GP731
Text: Surface Mount Band Pass Filter RBP-400+ 292 to 490 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •
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RBP-400+
-55oC
100oC
GP731
2002/95/EC)
M104389
EDR-7836AU
RBP-400
GP731
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gp731
Abstract: RF band pass filter RBP-275
Text: RBP-275+ RBP-275 Surface Mount Band Pass Filter 268 to 282 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35"
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RBP-275+
RBP-275
-55oC
100oC
2002/95/EC)
GP731
TB-332
PL-176)
gp731
RF band pass filter
RBP-275
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PBP-35W
Abstract: MCL 25 mcl 0 120
Text: Plug-In Band Pass Filter 50Ω, PBP-35W+ PBP-35W 25 to 45 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40" -40 C to 85 C -55oC to 100oC
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PBP-35W+
PBP-35W
-55oC
100oC
2002/95/EC)
M98898
EDR-7459U
PBP-35W
MCL 25
mcl 0 120
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Gunn Diode
Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER
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DA1304
DA1307
DA1321
DA1321-1
DA1338
DA1338-1
DA1338-2
DA1338-3
DA1349-2
DA1349-4
Gunn Diode
Microwave Silicon Detector Diode
DW9248
microwave waveguide
Marconi gunn
Silicon Detector
UHF diode
varactor diode filter
varactor
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am79c433
Abstract: 13952 TRANSMITTER
Text: Tem ic U2763B S e m i c o n d u c t o r s 900-MHz ISM Band Transmitter Description The transmitter IC U2763B is specifically designed for cordless telephone applications in the 900-MHz ISM band. The IC is manufactured using TEMIC Semicon ductors’ advanced UHF process. It consists of a 900-MHz
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U2763B
900-MHz
U2763B
U2762B
U2781B,
AM79C432A
AM79C433.
D-74025
am79c433
13952 TRANSMITTER
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Untitled
Abstract: No abstract text available
Text: Tem ic U2763B S e m i c o n d u c t o r s 900-MHz ISM Band Transmitter Description The transmitter IC U2763B is specifically designed for cordless telephone applications in the 900-MHz ISM band. The IC is manufactured using TEMIC Semicon ductors’ advanced UHF process. It consists of a 900-MHz
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U2763B
900-MHz
U2763B
900-MHz
U2762B
AM79C432A
AM79C433.
D-74025
18-Feb-99
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