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    C-1000B MHZ Search Results

    C-1000B MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RTK5RX65N0S01000BE Renesas Electronics Corporation Renesas RX65N Cloud Kit Visit Renesas Electronics Corporation
    RTK5RX23W0C01000BJ Renesas Electronics Corporation Target Board for RX23W Module Visit Renesas Electronics Corporation
    VLX1000BKG8 Renesas Electronics Corporation PanelPort™ LinkXtend™ Full Protocol Repeater Visit Renesas Electronics Corporation
    RTKA279972DA1000BU Renesas Electronics Corporation Automotive High Definition Link Decoder Evaluation Board Visit Renesas Electronics Corporation
    RTK9743F01S01000BE Renesas Electronics Corporation RZ/Five Evaluation Board Kit, , / Visit Renesas Electronics Corporation

    C-1000B MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BCM5500 PRODUCT Brief 10 GBPS SERIAL HIGH-SPEED TRANSCEIVER/BACKPLANE SERDES B C M 5 5 0 0 F E AT U R E S S U M M A R Y Serial Transceiver Supporting 1000B-CX, • Quad 1000B-LX, and 1000B-SX Full Duplex Operation O F B E N E F I T S • Enhanced IEEE 802.3z Ten Bit Interface TBI


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    PDF BCM5500 1000B-CX, 1000B-SX 1000B-LX, 25Vmicron 10-Bit Phase-Locked125 8B/10B 10B/8B BCM5500

    31136 remote control receiver circuit

    Abstract: EPIC-1 G961 iec 2091 IOM2
    Text: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification


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    PDF 16-bit 31136 remote control receiver circuit EPIC-1 G961 iec 2091 IOM2

    Q-67100-H6341

    Abstract: star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025
    Text: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3


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    PDF 16-bit Q-67100-H6341 star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025

    siemens integrated circuit TL 2521

    Abstract: ST20 ST21 ST30 ST31 CL15 ST01 ST10 ST11 PEF24911
    Text: ICs for Communications Quad ISDN 2B1Q Echocanceller Digital Front End PEB 24911 Version 1.2 PEF 24911 Version 1.2 Data Sheet 12.97 DS 2 PEB 24911 Revision History: Original Version: 12.97 Previous Releases: Data Sheet 12.97 DS 1 Page Subjects changes since last revision


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    PDF 80-kHz siemens integrated circuit TL 2521 ST20 ST21 ST30 ST31 CL15 ST01 ST10 ST11 PEF24911

    8050d transistor

    Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10
    Text: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,


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    PDF W562XXX W529xx W523x W583xx W56xxxx W581xx W528x W56xxx W528x, 8050d transistor winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10

    BUK456-1000A

    Abstract: BUK456 BUK456-1000B T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^ 5 3 ^ 3 1 00 2 0 5 4 0 0 ■ PowerMOS transistor BUK456-1000A BUK456-1000B r - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUK456-1000A BUK456-1000B BUK456 -1000A -1000B T0220AB

    BUK436W-1000B

    Abstract: T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and


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    PDF BUK436W-1000B OT429 TQ247) T0247) OT429 BUK436W-1000B T0247

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 511000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)


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    PDF 000B-60/-70/-80 511000BL-60/-70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000B/BL-60) 511000B/BL-70)

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0


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    PDF KM616V1000B, KM616U1000B 100ns 616V1000B 1000B

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60


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    PDF 511000B/BL-60) 511000B/BL-70) 511000B-80) 1000B/BL-60) 1000B/BL-70) 1000B-80)

    T3D 67 diode

    Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
    Text: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated


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    PDF 50-60Hz T3D 67 diode t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100

    E76270

    Abstract: T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110
    Text: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated


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    PDF 50-60Hz E76270 T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110

    Untitled

    Abstract: No abstract text available
    Text: CPCIare LDA Series O O R P O R A T I O Ni LDA Series Solid State Optocoupler DESCRIPTION CP Clare’s LDA series solid state optocoupler provide an optically isolated means of switching control circuits. Applications include Telecom, Industrial Control and Instrumentation circuits, where electrical isolation of the control


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    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60


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    PDF 511000B-60/-70/-80 511000BL-60/70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000BL-60) 511000BL-70)

    Untitled

    Abstract: No abstract text available
    Text: Zilog MILITARY Product Specification October 1988 Z 8 0 3 8 /Z 8 5 3 8 M ilitary FIO FIFO In p u t/ O utput Interface Unit F m Iu i m • 128-byte FIFO buffer provides asynchronous bidirectional CPU/CPU or CPU/peripheral interface, expandable to any width in byte


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    PDF 128-byte Z8038 /Z8538 16-bmission

    buk438

    Abstract: BUK438-1000A BUK438-1000B 2u 57 diode SOT93 package
    Text: 7=3?-/-S Philips Components Data sheet status Preliminary specification date of issue March 1991 PHILIPS PowerMOS transistor SbE D INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUK438-1000A/B 711002b BUK438 -1000A -1000B K438-10OOA/B BUK438-1000A BUK438-1000B 2u 57 diode SOT93 package

    k428

    Abstract: MC 140 transistor "MC 140" transistor K-428 transistor mc 140 diode K428
    Text: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK428-1OOOA/B 711Dfl2b 00M454fl BUK428 -1000A -1000B -SOT199 BUK428-1000A/B 7110aab k428 MC 140 transistor "MC 140" transistor K-428 transistor mc 140 diode K428

    Untitled

    Abstract: No abstract text available
    Text: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF BUK638-1000A/B 7110fiEb BUK638 BUK638-10OOA/B

    K428

    Abstract: MC 140 transistor "MC 140" transistor BUK428-1000B diode K428
    Text: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK428-1OOOA/B 711Dfl2b 00M454fl BUK428 -1000A -1000B -SOT199 K428 MC 140 transistor "MC 140" transistor BUK428-1000B diode K428

    Untitled

    Abstract: No abstract text available
    Text: N E C _¿¿PD750104.750106.750108.750104 A . 750106(A). 750108(A) 9. RESET FUNCTION The /¿PD750108 is reset with the external reset signal (RESET) or the reset signal received from the basic interval tim er/w atchdog tim er. When either reset signal is input, the internal reset signal is generated. Figure 9-1 shows the


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    PDF uPD750104 uPD750106 uPD750108 PD750108

    Untitled

    Abstract: No abstract text available
    Text: 7 Philips Components Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF GG44S4fl BUK428 -1000A -1000B

    K638

    Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a


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    PDF BUK638-1000A/B 0G44744 BUK638 -1000A -1000B K638-1OOOA/B 711Gfi5b 04M74L K638 transistor S52 DIODE 1000a fet 1000A

    K438-1000A

    Abstract: BUK438-1000A BUK438-1000B k4381
    Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a


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    PDF BUK438-1OOOA/B 711002b BUK438 -1000A -1000B BUK438-1000A/B 711062b T-39-I5 K438-1000A BUK438-1000A BUK438-1000B k4381

    BUK456-1000A

    Abstract: BUK456 1000A MOS BUK456-1000B T0220AB
    Text: Philips Components BUK456-1000A BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK456-1000A BUK456-1000B BUK456 -1000A -1000B T0220AB; M89-1162/RC BUK456-1000A 1000A MOS BUK456-1000B T0220AB