concept 2101S
Abstract: NSD-2101s 2101S Concept ECJ-0EB0J475M k 2101 equivalent AMK063BJ474MP-F JESD78 NSD-2101 nsd2101 piezo wafer
Text: Data Sheet NSD-2101 P i e z o M o t o r D r i v e r A S I C f o r S QL- RV S er ie s R e d u c e d Vol t a g e S Q U I G G L E RV a n d U TA F M o t o r s 1 General Description 2 Key Features Industry’s smallest piezo motor drive solution with direct battery
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NSD-2101
16-pin
com/NSD-2101
concept 2101S
NSD-2101s
2101S Concept
ECJ-0EB0J475M
k 2101 equivalent
AMK063BJ474MP-F
JESD78
NSD-2101
nsd2101
piezo wafer
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NSD-2101
Abstract: ultrasonic piezo MC-33DB-RV k 2101 equivalent AMK063BJ474MP-F ECJ-0EB0J475M JESD78 AMK06 4468 8 pin driver piezo wafer
Text: Preliminary Data Sheet NSD-2101 P i e z o M o t o r D r i v e r A S I C f o r S QL- RV S er ie s R e d u c e d Vol t a g e S Q U I G G L E RV a n d U TA F M o t o r s 1 General Description 2 Key Features Industry’s smallest piezo motor drive solution with direct battery
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Original
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NSD-2101
16-pin
com/NSD-2101
NSD-2101
ultrasonic piezo
MC-33DB-RV
k 2101 equivalent
AMK063BJ474MP-F
ECJ-0EB0J475M
JESD78
AMK06
4468 8 pin driver
piezo wafer
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Untitled
Abstract: No abstract text available
Text: REVISION C DSM-XXX-X-XX-S-X-XX-XX MDUNTING FftCE —FT: Flushed Threaded Inserts RV-01 -RJi Renovable Jack Screws (JS-01) -MT! M3 Metric Threaded Inserts (RV-02) -MJi -MT option with renovable_ M3 Jackscrews (JS-02) [D] -NT Non-Threaded Rivet (RV-03) BDftRD MDUNT
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RV-01)
JS-01)
RV-02)
JS-02)
RV-03)
FB-318-TH)
LB-318-TH)
LB-318-T1)
FB-590-TH)
LB-59D-TH)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008VP,RV-70L,-85L,-10L,-12L -70LL,-85LL,-10LL,-12LL 1048576-BIT 131072-W0RD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5M 51 00 8V P, RV are 1048576-bit C M O S static RAM s organized as 131072-word by 8-bit. They are fabri cated using high performance triple polysilicon C M O S
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M5M51008VP
RV-70L
-70LL
-85LL
-10LL
-12LL
1048576-BIT
131072-W0RD
131072-word
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Untitled
Abstract: No abstract text available
Text: P R E C I S O T H I N N F I L M T E C H O L O G Y SMT CHIPS C E C C Q ualified Thin Film R esistor Chip N T hin Film M odels RU-RV F eatures • Nickel barrier for high temperature operating conditions • Tight T C R <10ppm/°C, and in lot tracking <5 ppm/°C for RV version
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10ppm/Â
100ppm/Â
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Untitled
Abstract: No abstract text available
Text: Preliminary Information AMD-K6 Processor Data Sheet AMDZ1 Preliminary Information 1998 Advanced Micro Devices, Inc. ALL rig h ts re se rv e d . A d v a n c e d M icro D evices, In c. “A M D ” re se rv e s th e r ig h t to m a k e ch a n g es in its
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Untitled
Abstract: No abstract text available
Text: QUICK REFERENCE GUIDE ELECTRIC & M AGNETIC FIELD M EASUREM ENT 8 7 0 0 Se rie s S u rv e y Syste m 293 M o d e l 8 7 1 8 S u rv e y M e t e r 296 M o d e l 8 7 1 2 S u rv e y M e t e r 303 8 7 1 7 Se rie s R a c k - M o u n t S u rv e y M e t e r 306 8 7 0 0 Se rie s Electric Fie ld P ro b e s
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231-1700-IN
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Untitled
Abstract: No abstract text available
Text: REVISION F DSM-XXX-X-XX-P-X-XX-XX TAIL SETBACK -318 -590 SHELL SIZE/PDSITIDN— 1 -E-09 —A— 15 —B—25 -C-37 HDUNTING FACE —ET: Flushed Threaded Inserts RV-01 -RJi Removable Jack Screws (JS-01) -MT! M3 Metric Threaded Inserts (RV-02) -MJi -MT option with removable
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-E-09
-C-37
RV-01)
JS-01)
RV-02)
JS-02)
RV-03)
EB-318-TH)
LB-318-TH)
LB-318-T1)
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mm-100-xx
Abstract: No abstract text available
Text: Preliminary Information AMD-K6-2 Processor Data Sheet AMD£I Preliminary Information 1998 Advanced Micro Devices, Inc. ALL rig h ts re se rv e d . A d v a n c e d M icro D evices, In c. “A M D ” re se rv e s th e r ig h t to m a k e ch a n g es in its
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2185od
mm-100-xx
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M5M51008AP
Abstract: M5M51008AVP
Text: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-10L, -12L,-70LL,-85LL,-10LL,-12LL 1048576-BIT 131Q72-WORD BY 8-BIT CM0S STATIC RAM D E S C R IP T IO N The M5M51008AP, FP, VP, RV are a 1048576-b it CMOS static RAM organized as 131072 word by 8 -b it which are
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M5M51008AP
RV-70L
-70LL
-85LL
-10LL
-12LL
1048576-BIT
131Q72-WORD
M5M51008AP,
1048576-b
M5M51008AVP
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AMD K6
Abstract: No abstract text available
Text: Preliminary Information AMD-645 Peripheral Bus Controller Data Sheet AMDËI Preliminary Information 1997 Advanced M icro Devices, Inc. A ll rig h ts re se rv e d . A d v a n c e d M icro D evices, Inc. "A M D " re s e rv e s th e r ig h t to m a k e c h a n g e s in its
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AMD-645â
AMD-645
21095B/0â
208pin
208-pin
AMD K6
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27400A
Abstract: No abstract text available
Text: a>| MITSUBISHI LS Is M5M27400AP,FP,VP,RV-12,-15 4194304-BIT 524288-WORD BY 8-BIT/262144-WORD BY 16-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The M 5M 27400A P , FP, VP, RV are high-speed 4194304-bit one time programmable read only m em ories. They PIN C O N F IG U R A TIO N (T O P V IE W )
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M5M27400AP
RV-12
4194304-BIT
524288-WORD
8-BIT/262144-WORD
16-BIT)
7400A
4194304-bit
40-pin
27400A
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fire detector
Abstract: OEC1010 LC8910 LC8912 LC8913 D1P28 detector fire OEC10 3068A
Text: Ordering number: EN 2003B C M O S LSI NO.2003B L C 8 9 1 0 Series I Remote Control LSI O v e rv ie w The LC 8910 series are L SIs designed for transm it/receive use in remote control system applications.
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2003B
2003B
LC8910
fire detector
OEC1010
LC8912
LC8913
D1P28
detector fire
OEC10
3068A
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Linear Image Sensor MN3610 2048-Bit CCD Linear Image Sensor • O ve rv iew I Pin Assignments The MN3610 is a 2048-pixel high sensitivity C C D linear image sensor combining photo-sites using low dark output floating photodiodes and C C D analog shift registers for read out. It
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MN3610
2048-Bit
MN3610
2048-pixel
S0026C
001352b
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m5m51
Abstract: M5M51T08
Text: MITSUBISHI LSIs M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1 T 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 w ord by 8 - bit w hich are fabricated using h ig h -p e rfo rm a n c e qu a d ru p le -p o lysilico n
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M5M51
T08AP
RV-70SL
-85SL
-10SL
-12SL
1048576-BIT
131072-WQRD
M5M51T08
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EM 257
Abstract: No abstract text available
Text: ON S ty le C J> L ayout o I |V + o CL >B " co o "B Qi in 1 +1 KD 00 I £ CD -p in > in ^ O' CL O 00 CM to CM in m in iv Ld <N rv 00 ^_ O 00 '<• o tO O to o in — . crs IT CD CD \ +1 CL O -P cu lO < CM lO o O' o CO c o >+ oo m X X to T— CO O) rv m oo
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SSN001.
\DRAWING\257\C257FXXXREVA.
EM 257
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Untitled
Abstract: No abstract text available
Text: _ bq2058 BENCHMARQ Lithium Ion Pack Supervisor for 3 -and 4-Cell Packs Features General Description >• P ro te c ts a n d in d iv id u a lly m o n i to r s t h r e e o r fo u r L i-Io n s e rie s cells fo r o v e rv o ltag e , u n d e rv o lt
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bq2058
bq2058
16-pin
bq2058W
bq2058M
2058F
bq2058K
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Linear Image Sensor MN3662 3648-Bit High-Resolution CCD Linear Image Sensor • O ve rv iew ■ P in Assignments Th e M N 3 6 6 2 is a high responsivity C C D linear im age sensor having floating photodiodes in the photodetector region, C C D
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MN3662
3648-Bit
400nm
680pF
0Q135bb
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Area Image Sensor MN3723FE 4.5m m 1/4 inch EIS CCD Area Image Sensor • O ve rv iew ■ P in Assignments T h e M N 3 7 2 3 F E is a 4.5m m (1 /4 inch) Interline Transfer C C D (IT -C C D ) solid state im age sensor device. This device uses photodiodes in the optoelectric conversion
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MN3723FE
270TO10T)
0D1344b
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Untitled
Abstract: No abstract text available
Text: _ b q 2 0 5 8 BENCHMARQ Lithium Ion Pack Supervisor for 3 -and 4-Cell Packs Features General Description >• P ro te c ts a n d in d iv id u a lly m o n i to r s th r e e or fo u r L i-Io n s e rie s cells for o v e rv o ltag e , u n d e rv o lt
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bq2058
16-pin
bq2058W
bq2058M
bq2058F
bq2058K
bq2058SN
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Untitled
Abstract: No abstract text available
Text: _ b q 2 0 5 8 BENCHMARQ Lithium Ion Pack Supervisor for 3 -and 4-Cell Packs Features General Description >- P ro te c ts a n d in d iv id u a lly m o n i to r s t h r e e o r fo u r L i-Io n s e rie s cells fo r o v e rv o ltag e , u n d e rv o lt
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bq2058
16-pin
bq2058W
bq2058M
2058F
bq2058K
bq2058S
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Linear Image Sensor MN3610H 2048-Bit High-Responsivity CCD Linear Image Sensor • O v e rv ie w ■ P i n Assignm ents T he M N 3 61 0 H is a 2048-p ixel high sensitivity C C D linear image sensor combining photo-sites using low dark output
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MN3610H
2048-Bit
2048-p
All114
bT32flS2
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Area Image Sensor MW3736CKH 11 mm 2/3 inch 768H CCD Area Image Sensor • P i n Assignm ents ■ O v e rv ie w Th e M W 3 7 3 6 C K H is a 11m m (2 /3 inch) Interline Transfer C C D (IT -C C D ) solid state im age sensor device. This device uses photodiodes in th e optoelectric conversion
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MW3736CKH
3736C
bT32fl52
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m5m51008afp
Abstract: MSM51008
Text: M IT S U B IS H I L S Is M5M51008AFP,VP,RV-12VL,-15VL, -12VLL.-15VLL 1 0 4 8 5 7 6 - B IT 1 3 1 Q 7 2 -W O R D B Y 8 - B I T C M 0 S S T A T IC R A M DESCRIPTION The M 5M 51008A FP , VP, RV are a 1 0 4 8 5 7 6 -b it CMOS static •3AM organized as 131072
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M5M51008AFP
RV-12VL
-15VL,
-12VLL
-15VLL
1008A
MSM51008
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