945 TRANSISTOR
Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
Text: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD57006
PD57006S
PD57006
PowerSO-10RF.
945 TRANSISTOR
AN1294
PD57006S
smd transistor z8
smd le
transistor 945 p
a4 smd transistor
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945 TRANSISTOR
Abstract: PD57030S AN1294 PD57030 le5012
Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD57030
PD57030S
PD57030
PowerSO-10RF.
945 TRANSISTOR
PD57030S
AN1294
le5012
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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945 TRANSISTOR
Abstract: 700B AN1294 GP413
Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package
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STAP57030
PowerSO-10RF
STAP57030
945 TRANSISTOR
700B
AN1294
GP413
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stmicroelectronics 402 transistor 650
Abstract: 700B AN1294 PD57018 PD57018S
Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57018
PD57018S
PowerSO-10RF
PD57018
PowerSO-10RF.
PD57018ned
stmicroelectronics 402 transistor 650
700B
AN1294
PD57018S
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Untitled
Abstract: No abstract text available
Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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PD57070
PD57070S
PowerSO-10RF
PowerSO-10RF.
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transistor G 945
Abstract: transistor L 945 945 TRANSISTOR M250 SD57030-01 XSD57030-01 h 945 p 945 P transistor c 945 p transistor
Text: SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel
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SD57030-01
SD57030-01
XSD57030-01
transistor G 945
transistor L 945
945 TRANSISTOR
M250
XSD57030-01
h 945 p
945 P transistor
c 945 p transistor
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E2 p SMD Transistor
Abstract: PD57045S 700B AN1294 PD57045
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,
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PD57045
PD57045S
PD57045
PowerSO-10RF.
E2 p SMD Transistor
PD57045S
700B
AN1294
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PDF
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Untitled
Abstract: No abstract text available
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
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c18st
Abstract: 700B AN1294 PD57070 PD57070S
Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57070
PD57070S
PowerSO-10RF
PD57070
PowerSO-10RF.
c18st
700B
AN1294
PD57070S
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MRF181
Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181/D
MRF181SR1
MRF181ZR1
MRF181/D
MRF181
300 uF 450 VDC Mallory Capacitor
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TC50025
Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
Text: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181SR1
MRF181ZR1
TC50025
MRF181SR1
motorola 549 diode
MRF181ZR1
ARLON-GX-0300-55-22
TC5002
300 uF 450 VDC Mallory Capacitor
MRF181
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945 TRANSISTOR
Abstract: 700B M243 SD57030 TSD57030 issi 546
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
945 TRANSISTOR
700B
M243
TSD57030
issi 546
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capacitor ceramic variable RF
Abstract: variable capacitor 945 TRANSISTOR 700B M243 SD57030 TSD57030 c 945 TRANSISTOR equivalent
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
capacitor ceramic variable RF
variable capacitor
945 TRANSISTOR
700B
M243
TSD57030
c 945 TRANSISTOR equivalent
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ARLON-GX-0300-55-22
Abstract: TC50025 MRF181 MRF181SR1 450 VDC MALLORY CAPACITOR 300 uF 450 VDC Mallory Capacitor
Text: MOTOROLA MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181SR1
MRF181ZR1
31JUL04
31JAN05
ARLON-GX-0300-55-22
TC50025
MRF181
450 VDC MALLORY CAPACITOR
300 uF 450 VDC Mallory Capacitor
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945 TRANSISTOR
Abstract: 700B M250 SD57030-01 capacitor 47
Text: SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed DESCRIPTION
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SD57030-01
SD57030-01
TSD57030-01
945 TRANSISTOR
700B
M250
capacitor 47
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transistor C 945
Abstract: LET9060C 945 TRANSISTOR M243 transistor d 945
Text: LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN
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LET9060C
LET9060C
transistor C 945
945 TRANSISTOR
M243
transistor d 945
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lc 945 p transistor NPN TO 92
Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :
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IJ11III
lc 945 p transistor NPN TO 92
945 TRANSISTOR
lc 945 p transistor
C 945 Transistor
lc 945 p transistor NPN
transistor c945
TRANSISTOR c945 p
BR c945
C945
c945 TRANSISTOR
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c945 transistor
Abstract: TRANSISTOR c945 p C945 P C945 NPN transistor transistor C945 C945 BR c945 transistor BR c945 C945 RI C945 TO92
Text: TO-92 Plastic-Encapsulate Transistors ^ C 945 TR A N SISTO R N PN FEATURES HSR9RB9RB Pow er TO-92 P cm ; 0 .4 W (Tam b=25°C) C ollector current 1.E M I T T E R Ic 2.C O L L E C T O R m : 0.15 A G S flttSR S S B fiB E S C ollector-b ase voltage 3.B A S E
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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OCR Scan
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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m lc 945
Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
Text: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
TI 945
945 npn
0034T
947 smd
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BDS945
Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors
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711002b
BDS943/945/947
T-33-0?
OT223)
BDS944/946/948.
BDS943
BDS945
BDS947
m lc 945
J 3305
DDM317S
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D 1427
Abstract: transistor C 945 945 TRANSISTOR transistor 945 transistor d 945 m243 SD57060 transistor G 945
Text: SD57060 RF & MICROWAVE TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs TARGET DATA . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • Pout = 60 W with 11.5 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57060 is a common source N-Channel
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SD57060
SD57060
022142A
D 1427
transistor C 945
945 TRANSISTOR
transistor 945
transistor d 945
m243
transistor G 945
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transistor c 945
Abstract: transistor d 945 c 945 transistor 945 TRANSISTOR transistor 945 M250 SD57060-01 transistor h 945
Text: SD57060-01 RF & MICROWAVE TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs TARGET DATA . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • Pout = 60 W with 11.5 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57060-01 is a common source N-Channel
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SD57060-01
SD57060-01
022729A
transistor c 945
transistor d 945
c 945 transistor
945 TRANSISTOR
transistor 945
M250
transistor h 945
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