C 945 P EQUIVALENT Search Results

tca 945

Abstract: 12A200S IR10 RCR-2368B MARKING CODE JN marking 2501 TCA 208
Contextual Info: OUTLINE Type TCA Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.

7343L

Abstract: tca 4001
Contextual Info: OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity. This ensures higher permissible ripple current and excellent noise absorption performance on high-frequency circuits.

RN10U

Contextual Info: P-TCA-E006 OUTLINE (Type TCA) Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.

Contextual Info: No. P-TCA-002 DATE 2007-11 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.

TCA 160c

Abstract: RCR-2368B m1 marking code marking code M1 marking A7 4001
Contextual Info: No. P-TCA-003 DATE 2008-10 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

945 TRANSISTOR

Abstract: 700B AN1294 GP413
Contextual Info: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

SC70-5L

Abstract: diode 5L
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82402374 TVS Diode Array WE-TVS SC70-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 Lines - unidirectional • Provide ESD Protection for each line to

M R029

Abstract: h 945 p
Contextual Info: 4 3 RELEASED FOR PUBUCAT10N THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. D 18.00 [457.2] — .079 [2.01] TYP — .154 [3.91] .160 [4.06] —► TYP 0.059 [1.50] .063 [1.60] TYP 4 )-$ — .069 [1.75] 2 PLCS

MRF181

Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Contextual Info: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

c 945 p equivalent

Abstract: SC70-6L
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82402375 TVS Diode Array WE-TVS SC70-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to

TC50025

Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
Contextual Info: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

capacitor ceramic variable RF

Abstract: variable capacitor 945 TRANSISTOR 700B M243 SD57030 TSD57030 c 945 TRANSISTOR equivalent
Contextual Info: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION

ARLON-GX-0300-55-22

Abstract: TC50025 MRF181 MRF181SR1 450 VDC MALLORY CAPACITOR 300 uF 450 VDC Mallory Capacitor
Contextual Info: MOTOROLA MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

PD85035C

Abstract: 945 TRANSISTOR M243
Contextual Info: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

M R029

Abstract: R029
Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. DIST AA 53 REVISIONS LTR .154 [3.91] .160 [4.06] TYP .069 [1.75] 2 PLCS —•(£) (j) -(j) j? ' BUS □ -s a ­ RECEPTACLE c 1 / S 1 1 /

945 TRANSISTOR

Abstract: JESD97 M243 PD85035C transistor marked 12w
Contextual Info: PD85035C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

SD57045

Abstract: 28/BZW06-171 equivalent M243 TSD57045
Contextual Info: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

SD57045

Abstract: M250 SD57045-01 TSD57045-01
Contextual Info: SD57045-01  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

0843 12L

Contextual Info: SD57045-01  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel

Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage