C 829 TRANSISTOR Search Results

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

SF 829 B

Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Contextual Info: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)

2SC4081RT1

Contextual Info: 2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage

2SA1576ART1

Contextual Info: 2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage

MSC2295

Abstract: MSC2295–BT1
Contextual Info: MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage Rating V(BR)CBO 30

npn, transistor, sc 107 b

Contextual Info: MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO

Contextual Info: MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage

Contextual Info: 2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 w This device is available in Pb−free package s . Specifications herein http://onsemi.com apply to both standard and Pb−free devices. Please see our website at

Contextual Info: MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO

Contextual Info: 2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 w This device is available in Pb−free package s . Specifications herein http://onsemi.com apply to both standard and Pb−free devices. Please see our website at

MSB709

Contextual Info: MSB709−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector − Base Voltage V(BR)CBO −60 Vdc

Contextual Info: MSB709−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector − Base Voltage V(BR)CBO −60 Vdc

marking 12Y

Abstract: marking code onsemi MSC2712GT1 MSC2712GT1G MSC2712YT1 MSC2712YT1G 12Y marking
Contextual Info: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage

MSA1162GT1

Abstract: MSA1162GT1G MSA1162YT1 MSA1162YT1G
Contextual Info: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • ESD Rating: TBD • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value

Contextual Info: 2SC2712GT1G General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • This is a Pb−Free Device http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc

MSD42SWT1

Abstract: MSD42SWT1G d4 sot323
Contextual Info: MSD42SWT1 Preferred Device NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

mps a12

Abstract: mpsa12
Contextual Info: MPSA12 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient

MSD602

Abstract: MSD602RT1
Contextual Info: MSD602−RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc

Contextual Info: MSB710−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc

MPSA12

Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
Contextual Info: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg

2SC2712GT1G

Abstract: MMBT3904
Contextual Info: 2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in

Contextual Info: MPS6560 Audio Transistor NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 25 Vdc Emitter −Base Voltage

BSS64LT1G

Abstract: BSS64LT1
Contextual Info: BSS64LT1 Driver Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 120 Vdc Emitter −Base Voltage

Contextual Info: MSD601−RT1, MSD601−ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA SURFACE MOUNT MAXIMUM RATINGS TA = 25°C