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    C 6113 TRANSISTOR Search Results

    C 6113 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 6113 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 6116

    Abstract: UN6113 611H schematic diagram washing machines UN6110 UN6111 UN6112 UN6114 UN6115 UN6116
    Text: Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor Unit: mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 4.0 • Resistance by Part Number ● ● ●


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    PDF N6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 ic 6116 UN6113 611H schematic diagram washing machines UN6110 UN6111 UN6112 UN6114 UN6115 UN6116

    ic 6116

    Abstract: c 6113 transistor UNR6111 UNR6115 611H 6110 611-7 ic UNR6112 UNR6113 UNR6114
    Text: Transistors with built-in Resistor UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L M Di ain sc te on na tin nc ue e/ d UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L (0.7) 2.5±0.1 (0.8) (0.8)


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    PDF UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L 6110/611D/611E/611F/611H/611L) ic 6116 c 6113 transistor UNR6111 UNR6115 611H 6110 611-7 ic UNR6112 UNR6113 UNR6114

    ic 6116

    Abstract: c 6113 transistor 6110 ic 6116 pdf datasheet UNR6111 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116
    Text: Transistors with built-in Resistor UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L Unit: mm 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.8 4.0 1.0 For digital circuits


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    PDF UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L 6110/611D/611E/611F/611H/611L) UNR6111 UNR6112 UNR6113 UNR6114 ic 6116 c 6113 transistor 6110 ic 6116 pdf datasheet UNR6111 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116

    ic 6116

    Abstract: UNR6111 ic 611 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116 UNR6117 UNR6118
    Text: Transistors with built-in Resistor UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) For digital circuits


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    PDF UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L 6110/611D/611E/611F/611H/611L) UNR6111 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116 UNR6117 ic 6116 UNR6111 ic 611 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116 UNR6117 UNR6118

    c 6113 transistor

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) For digital circuits


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    PDF UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L 6110/611D/611E/611F/611H/611L) UNR6111 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116 UNR6117 c 6113 transistor

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. PSAH-B Drawing No. LP0675 Released 03/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL PSAH - HALL EFFECT SPEED SENSOR The Hall Effect speed sensor (PSAH) is ideal for sensing steel gears or other ferrous targets from 0 to 10 KHz. This sensor does not have a minimum


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    PDF LP0675 PSAH0000 201-B, Sector-30 Gurgaon-122002

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. ZUJ/ZUL-C Drawing No. LP0746 Released 02/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODELS ZUJ AND ZUL - LARGE THRU-BORE ROTARY PULSE GENERATORS FOR MOTOR FEEDBACK GENERAL DESCRIPTION The ZUJ and ZUL are high performance units that are ideal for fast revving


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    PDF LP0746 201-B, Sector-30 Gurgaon-122002

    Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

    Abstract: No abstract text available
    Text: Bulletin No. ZPJ-C Drawing No. LP0723 Released 03/14 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODELS ZPJ - LARGE THRU-BORE ROTARY PULSE GENERATOR GENERAL DESCRIPTION The Model ZPJ ia a thru-bore encoder with a bore of 0.625" (15.875 mm).


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    PDF LP0723 201-B, Sector-30 Gurgaon-122002 Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

    c 6113 transistor

    Abstract: CEF06N5
    Text: CEF06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 500V , 4.5A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole


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    PDF CEF06N5 O-220F O-220F c 6113 transistor CEF06N5

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. PSAFP- A Drawing No. LP0589 Released 03/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net “FLAT PACK” RECTANGULAR INDUCTIVE PROXIMITY SENSORS      IDEAL FOR LIMITED SPACE APPLICATIONS SENSE FERROUS & NON-FERROUS METAL OBJECTS TO


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    PDF LP0589 201-B, Sector-30 Gurgaon-122002

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. PRM/RRM-B Drawing No. LP0522 Released 06/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODELS PRM & RRM – MINIATURE DC POWERED PHOTO-ELECTRIC SENSOR     GENERAL DESCRIPTION +10 to +30 VDC OPERATION WITH REVERSE POLARITY


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    PDF LP0522 201-B, Sector-30 Gurgaon-122002

    coil metal detector circuit

    Abstract: No abstract text available
    Text: Bulletin No. PSA-H Drawing No. LP0238 Released 05/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net INDUCTIVE PROXIMITY SENSORS     SENSE FERROUS & NON-FERROUS METAL OBJECTS TO “ZERO SPEED” 2-WIRE CURRENT SOURCE & 3-WIRE NPN OPEN COLLECTOR


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    PDF LP0238 201-B, Sector-30 Gurgaon-122002 coil metal detector circuit

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. PSAB-D Drawing No. LP0443 Released 05/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net INDUCTIVE PROXIMITY SENSORS     SENSE FERROUS & NON-FERROUS METAL OBJECTS TO “ZERO SPEED” 2-WIRE CURRENT SOURCE (NAMUR) & 3-WIRE NPN TRUE


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    PDF LP0443 201-B, Sector-30 Gurgaon-122002

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. PES/DC-C Drawing No. LP0156 Released 04/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net COMPACT DC POWERED PHOTO-ELECTRIC SENSORS       RETROREFLECTIVE, PROXIMITY (DIFFUSE) & OPPOSED BEAM PAIRS MODULATED LED LIGHT BEAMS FOR IMMUNITY TO AMBIENT


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    PDF LP0156 MB300000 RT100000 RT200000 201-B, Sector-30 Gurgaon-122002

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. APLIT-J Drawing No. LP0149 Released 06/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL APLIT - APOLLO 5 AMP AC CURRENT METER  3 1/2-DIGIT, 0.56" (14.2 mm) HIGH LED DISPLAY  SELECTABLE DECIMAL POINT LOCATION  BUILT-IN SCALING PROVISIONS


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    PDF LP0149 4/IP65 201-B, Sector-30 Gurgaon-122002

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. CUB4LP-M Drawing No. LP0318 Released 12/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL CUB4LP - LOOP POWERED PROCESS INDICATOR MODEL CUB4CL - CURRENT LOOP INDICATOR  DUAL RANGE, 4 to 20 mA OR 10 to 50 mA  3½-DIGIT, 0.6" (15.2 mm) HIGH DIGITS


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    PDF LP0318 4X/IP65 CUB4CL40 MLPS1000 201-B, Sector-30 Gurgaon-122002

    n 6113 transistor

    Abstract: c 6113 transistor
    Text: A153S& VQ2004 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) (n ) (A) PACKAGE VQ2004 -60 5 -0.41 All VQ2006 -90 5 -0.41 All Performance Curves: VPDV10 •d


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    PDF VQ2004 VQ2006 A153S& 14-PIN VPDV10 n 6113 transistor c 6113 transistor

    SMP40P06

    Abstract: No abstract text available
    Text: Tem ic SMP40P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) -6 0 rDS(on) (£2) 0.045 I d (A) -4 0 S TO-220AB 9 o DRAIN connected to TAB U U U ^ GD S D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


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    PDF O-220AB SMP40P06 36665--Rev. P-36665--Rev. SMP40P06

    AT-60500

    Abstract: AT-01635 AT-21400 AT21400 AT-60586
    Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0


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    PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586

    AT-64020

    Abstract: No abstract text available
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


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    PDF AT-64020

    Untitled

    Abstract: No abstract text available
    Text: WVUEREX KD221K75 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d rH n Q tO n Transistor Module 75 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor M odules are high power devices designed for use


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    PDF KD221K75 Amperes/1000

    UL1577

    Abstract: hcpl 611 A 2531 0601 HP 4502 HP 2530 hcpl4503 6N136 HCPL-0600 HCPL-0601 HCPL-0611
    Text: Small Outline High-Speed Logic Gate Optocouplers Device Description HCPL-0600 S Vie H ahodeE 2 Vt CATHODE [3 DVgut 11 Ugno Small Outline Optically Coupled Logic Gate HCPL-0601 a »NODE g Uvee Z i Vi CATHO D E Q HVoUT E Small Outline High CMR, Optically Coupled


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    PDF HCPL-0600 10MBd UL1577 HCPL-0601 Vch-50V HCPL-0611 10KV/hs@ VCH-1000 6N136 hcpl 611 A 2531 0601 HP 4502 HP 2530 hcpl4503 6N136 HCPL-0611

    Lautsprecher LP

    Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
    Text: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.


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    PDF 8311o814 PV-T803 6E619 MRE826 NSE825 Lautsprecher LP transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028

    TO-22CFN

    Abstract: No abstract text available
    Text: T ra n s is to rs T O -2 2 0 • T Q -2 2 0 F P • T O -2 2 0 F N • H R T TD-220FP is a TG-220 w ifi mo« aated fin tar e re« mounting ar>d righer PC. 2W. TO-22CfN is a kw profle by 2mm version c* TO-22CFP wfrcul fin support pin, for higher mounting density. HRT is a taped power transistor package fee uso with an automatic placement machine.


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    PDF O-220 O-220FP O-220FN O-220FP TG-220 O-22CFN O-22CFP TO-22CFN