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    C 550 TRANSISTOR Search Results

    C 550 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C 550 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MSP55

    Abstract: No abstract text available
    Text: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		MSP55 Freq40M PDF

    Untitled

    Abstract: No abstract text available
    Text: DT600-550 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550º V(BR)CBO (V) I(C) Max. (A)750 Absolute Max. Power Diss. (W)3.0k Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		DT600-550 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSP55A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		MSP55A Freq30M PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A ᴌFor Complementary with PNP Type BC559/560. N MAXIMUM RATING Ta=25ᴱ 30 VCBO BC550 BC549 Collector-Emitter Voltage 50 30 VCEO 45 UNIT


    Original     		BC549/550 BC559/560. BC549 BC550 100mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300


    Original     		MJ300A2F55 Code5-10 NumberTR00500010 PDF

    cc100r600

    Abstract: No abstract text available
    Text: CC100R600K Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150 h(FE) Min. Current gain.40 @I(C) (A) (Test Condition)100


    Original     		CC100R600K cc100r600 PDF

    Untitled

    Abstract: No abstract text available
    Text: KD225575 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550ö V(BR)CBO (V)600 I(C) Max. (A)75 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)75


    Original     		KD225575 NumberTR00700002 PDF

    Amplifier with transistor bc549

    Abstract: BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet
    Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING Ta=25 G J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO


    Original     		BC549/550 BC559/560. BC550 BC549 100mA, 100MHz Amplifier with transistor bc549 BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet PDF

    BC560

    Abstract: bc559 TRANSISTOR bc560 transistor BC559
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A ・For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50


    Original     		BC549/550. BC559/560 BC559 BC560 TRANSISTOR bc560 transistor BC559 PDF

    BC560

    Abstract: BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A ᴌFor Complementary with NPN Type BC549/550. N MAXIMUM RATING Ta=25ᴱ -30 VCBO BC560 BC559 Collector-Emitter Voltage -50 -30 VCEO -45 UNIT V H V


    Original     		BC559/560 BC549/550. BC559 BC560 -100mA, -10mA, 100MHz BC560 BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4517 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1


    Original     		2SC4517 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 M Hz CATV Input/O utput Trunk A m p lifier MHW6172 . . . designed specifically for 550 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz f j and an all gold metallization


    OCR Scan     		77-Channel MHW6172 60-Channel PDF

    MPS-A65

    Abstract: No abstract text available
    Text: Miniature Transistors TYPE POLA­ CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2


    OCR Scan     		BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 MT4102 MPS-A65 PDF

    bc556

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556 PDF

    transistor B 560

    Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560 PDF

    transistor C 548 B

    Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


    OCR Scan     		BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor C 548 B transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


    OCR Scan     		BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 PDF

    BC549 NPN transistor

    Abstract: BC550 BC549 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC549 BC550 C o l l e c t o r - E m i t t e r BC549 Voltage BC550 Emitter-Base Voltage


    OCR Scan     		BC549/550 BC549 BC550 BC55br 10j/A, BC549 NPN transistor BC550 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure PDF

    BC559

    Abstract: TRANSISTOR bc560 BC560 bc560 c
    Text: SEMICONDUCTOR TECHNICAL DATA BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE • For Complementary With NPN Type BC549/550. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage


    OCR Scan     		BC559/560 BC549/550. BC559 BC560 -10JUA, -100mA, TRANSISTOR bc560 BC560 bc560 c PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEo= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector-Base Capacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 PDF

    TRANSISTOR C 557 B

    Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance


    OCR Scan     		BC556/557/558/559/560 BC556, 8C559, BCS60 BC546 BC556 BC557/560 BC558/559 BC557/56Ã TRANSISTOR C 557 B BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559 PDF

    CB 548 transistor

    Abstract: transistor C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage


    OCR Scan     		BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 CB 548 transistor transistor C 548 B PDF

    MD-60

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 MHz CATV A m plifier M HW 6342 . . . designed specifically for 5 5 0 M H z C A TV applications. Features ion-im planted arsenic emitter transistors with 7 G H z fT and an all gold metallization system.


    OCR Scan     		77-Channel 60-Channel CTB77 MHW6342 MD-60 PDF

    transistor c 548

    Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage


    OCR Scan     		BC546/547/548/549/550 BC546, BC549, BC556 BC546 BC547/550 BC548/549 BC546 BC547/550 BC548/549/550 transistor c 548 transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C PDF