C 5252 TRANSISTOR Search Results

500w inverter circuit diagram

Abstract: inverter 1000w 12v dc to 220v ac circuit diagram Design 1000W inverter using 2 parallel transformer main inverter transformer 1000W SCR 40A 600V 500w Full bridge transformer block diagram of dual 12v power supply power supply hv laser co2 5v dc to 110v ac 400 hz inverter SCR firing inverter circuit
Contextual Info: a .I.e . s y s t e m s , in c . 1 5 0 H o m e r Av e n u e As h l a n d . M A 0 1 7 2 1 50B-881-5252 TELEX 9 2 8 2 0 7 FAX 61 7 - 2 3 5 - 6 5 B 8 C 0 2 L A S E R P O W E R 125W T O S U P P L IE S 1 50 0W S '!EPT /?S7 /?- /•' 1 25/250/500W BALLASTLESS INSTALLATION,

5252 F ic

Abstract: ic 5252 F c 5252 transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807t OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 9 dB TYP at 2 GHz

Contextual Info: SEMICONDUCTOR T EC H N O L O G Y OSE HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS D | fll3bMSfl OGOOBlfl T -^ 9 ~ D / g g B B bI h n a iæ s J lll NPN & PNP STI Type ^ | Polarity Power Dissipation @ 25°C watts v CB0 (volts) VCER (volts) "FE @ l c

Driver

Abstract: S1D15605D11B k 3918 regulator D1565 k 3918 TRANSISTOR S1D15606 S1D15607 5252 F 1114 S1D15605D00B S1D15606D01B
Contextual Info: S1D15605 Series Technical Manual Rev.2.4a NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1D15605

Abstract: S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565
Contextual Info: 8. S1D15605 Series Rev. 2.4a Contents 1. DESCRIPTION . 8-1 2. FEATURES . 8-1

2N5758

Abstract: 2N5760
Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m

MG1200V1us51

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

Contextual Info: CD4512BM/CD4512BC 7jW\National ÆjA Semiconductor CD4512BM/CD4512BC 8-Channel Buffered Data Selector General Description Features The CD4512BM/CD4512BC buffered &channel data selec­ tor is a complementary MOS CMOS circuit constructed w ith N- and P-channel enhancement mode transistors.

Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

c 5252 transistor

Abstract: 5252 diode
Contextual Info: SFH620A SIEMENS 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-320% • • • • • • • • • • • • • • at 1 mA: 45% typical >13 Low CTR Degradation Good CTR Linearity Depending on Forward Current

Contextual Info: SIEMENS SFH620A 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-32 0 % at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • • • • Isolation Test Voltage, 5 3 0 0 VACr MS

p6020

Abstract: TIP664 TIP-663 TIP663 TIP-665
Contextual Info: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

TIP665

Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
Contextual Info: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

5252 led

Abstract: SOIC-6
Contextual Info: SFH6315 SFH6316 SIEMENS High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-6 Footprint • Compatible with Infrared Vapor Phase Raflow and Wave Soldering Processes • Isolation Voltage, 2500VnMS • Very High Common Mode Transient Immunity:

TPC6801

Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
Contextual Info: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh

GN135

Abstract: 5252 F "integrated circuit" c 5252 transistor high speed small signal transistor
Contextual Info: OPTEK TECHNOLOGY INC ObE D g ^7=16580OQOOSfiD Optoaloctronic* Division TRW Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5252 January 1985 High Speed Optocouplers Types 6N135, 6N136, QPI2502 Features Absolute Maxim um Ratin gs No derating required up to 70°C

Contextual Info: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance

c 5252 transistor

Contextual Info: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance

6M136

Abstract: 5252 F led driver LT 5252 GN135 SN13S 5252 F ic 6N136 5252 F trw RF POWER TRANSISTOR 5252 S
Contextual Info: OPTEK TECHNOLOGY INC ObE D |I b b V7 ^=iaS0 f l S ô GD □0 □Q0 □ □DE2 â0 OG 11 for Product! Prniiurtl Saver Optoaiectronics Division 1987 Cost TRW Electronic Components Group Call TRW for more information! Product Bulletin 5252 Januarv 1985 I M MmWW