Untitled
Abstract: No abstract text available
Text: 2731 Geräteanschlusskabel www.schurter.com/pg07_2 Netzweiterverbindungsleitung mit IEC Gerätanschlussstecker C, gerade C 70° C Beschreibung Referenzen Netzweiterverbindungsleitung, Schutzklasse II, Stifttemperatur 70 °C, Kabel Allgemeine Informationen
|
Original
|
com/pg07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2730 Geräteanschlusskabel www.schurter.com/pg07_2 Netzweiterverbindungsleitung mit IEC Gerätanschlussstecker C, gerade C 70° C Beschreibung Referenzen Netzweiterverbindungsleitung, Schutzklasse II, Stifttemperatur 70 °C, Kabel Allgemeine Informationen
|
Original
|
com/pg07
E45116
min/50â
-25testeckdose
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2711 Geräteanschlusskabel www.schurter.com/pg07_2 Netzweiterverbindungsleitung mit IEC Gerätanschlussstecker C, schräg abgewinckelt 70°C C 70° C Beschreibung Referenzen Netzweiterverbindungsleitung, Schutzklasse II, Stifttemperatur 70 °C, Kabel Allgemeine Informationen
|
Original
|
com/pg07
E45116
|
PDF
|
5088E
Abstract: No abstract text available
Text: CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
|
Original
|
CMLT5088EM
5088E
OT-563
20-January
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
|
Original
|
CMLT5088EM
5088E
OT-563
20-January
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
|
Original
|
CMLT5088EM
5088E
OT-563
12-February
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2712 Cord Sets www.schurter.com/pg07_2 Interconnection Cord with IEC Plug C, Angled C 70° C Description Interconnection Cord, Protection class II, Pin temperature 70 °C, Cable Approvals pdf, html, General Product Information, Approvals, RoHS, CHINA-RoHS,
|
Original
|
com/pg07
E45116
250VAC;
1min/50Hz)
to2712
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2730 Cord Sets www.schurter.com/pg07_2 Interconnection Cord with IEC Plug C, Straight C 70° C Description Interconnection Cord, Protection class II, Pin temperature 70 °C, Cable Approvals pdf, html, General Product Information, Approvals, RoHS, CHINA-RoHS,
|
Original
|
com/pg07
E45116
250VAC;
1min/50Hz)
to2730
|
PDF
|
BTS089
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage
|
OCR Scan
|
MMBT5088LT1
MMBT5089LT1*
5088LT1
5089LT1
25rtC
BT5089LT1
BTS089
|
PDF
|
2N508
Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Text: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage
|
OCR Scan
|
2N5088/D
2N508
N5088
N5089
O-226AA)
2N5088
2N5088 MOTOrola
2N5089
2N5089 MOTOROLA
|
PDF
|
2n508
Abstract: 2n5088
Text: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage
|
OCR Scan
|
2N5088/D
2N508
O-226AA)
2n5088
|
PDF
|
M5L8049
Abstract: ta8783 CSB503F5 D 8049 NEC
Text: APPLICATIONS m u R a ta RESONATORS Fig- 7-1 B a s ic O s c illa tio n C irc u it w ith C M O S In v e rte r IC : C D 4 0 6 9 U B E M O S X : C e ra m ic R eso n ato r C L„ C|_2 : Loading C a p a c ita n c e R d : D am p in g R esistan ce C e r a m ic
|
OCR Scan
|
220pF
470pF
120pF
330pF
C1378
TEA2029C
503F21
M5L8049
ta8783
CSB503F5
D 8049 NEC
|
PDF
|
mpsa18
Abstract: 2N5088
Text: 2N5088 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit C o lle c to r -E m itte r V o lta g e v CEO 30 25 Vdc C o lle c to r-B a s e V o lta g e v CBO 35 30 V dc 3.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s •Emitter-Base V o lta g e >C
|
OCR Scan
|
2N5088
2N5089
2N5088
O-226AA)
mpsa18
|
PDF
|
BC118
Abstract: 2N3692 2N3694 2N5133 BC107 BC135 MA4101 108B 40MHZ me4102
Text: /moll /ignol Tron/i/tor/ npn TO-IO« TO- 18 f E le c tric a l C h a ra c te r is tic s @ T A = 2 5 ° C M a x im u m R a tin g s \ TYPE NO. BVc b O O CÛ UJ > co 'C O UJ ü > Pd h p E @ V ç e @ *C V C E s a t @ ' c / ' b Cob m ax. m ax. NPN m in . /m a x .
|
OCR Scan
|
200mW
100mA
150MHz
O-106
BC118
2N3692
2N3694
2N5133
BC107
BC135
MA4101
108B
40MHZ
me4102
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage
|
OCR Scan
|
2N6428/6428A
z-10K
2N6428
2N6428A
100Hz
|
PDF
|
MA550
Abstract: 2N5088 2N5962 MMBT5962
Text: S E M IC O N D U C T O R 2N5962 MMBT5962 M a rk : 1 1 7 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r cu rre n ts to 50 mA. Sourced from Process 07. See 2N 5088 for characteristics.
|
OCR Scan
|
2N5962
MMBT5962
OT-23
2N5088
MA550
MMBT5962
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E ng ineerin g D ata Performance Specifications C o n ta c t D ata T h e A -L in e c o n n e c to r line is b u ilt to c o n fo rm to a n d e x c e e d th e te s t re q u ire m e n ts o f M IL -C -2 6 4 8 2 S e rie s II s p e c ific a tio n . It is a ls o c o m p a tib le w ith a n d m a te a b le to s im i
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PCB - Lead Wire Strain Relief Terminals F o r high q u a lity W ire -to -P C B c o n n e c tio n s , Z ie ric k c rim p -o n stra in re lie f te rm in a ls o ffe r an e c o n o m ic a lte rn a tiv e to c o s tly m ating c o n n e cto rs, te rm in a l b lo c k s and h e a d e r strip s. S tra in re lie f te rm in a ls crim p
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage
|
OCR Scan
|
KSP8097
|
PDF
|
LT 5226
Abstract: M83421 M83421/01-2172R M83421/01-5246S
Text: MIL STYLE FILM CAPACITORS DEARBORN MIL-C-83421/01 H E R M E TIC A LLY -S E A LE D A X IA L -L E A D M E TA LIZ E D -P O LY C A R B O N A TE C A P A C IT O R S T O M ILITA R Y S P E C IFIC A TIO N M IL-C - 83421/01 MIL STYLE CRH01, CRH02, CRH03, CRH04, CRH05
|
OCR Scan
|
MIL-C-83421/01
CRH01,
CRH02,
CRH03,
CRH04,
CRH05
M83421/01
MIL-C-83421/01.
CRH11,
CRH12,
LT 5226
M83421
M83421/01-2172R
M83421/01-5246S
|
PDF
|
M15098
Abstract: MS90451-7152 MS25237-387 ms24515 MS25237-327 MS24367-715AS15 MS25231-313 MS25237 OL387 MS15571-11
Text: 1080 Johnson Drive Buffalo Grove, IL 60089 _ 708-459-3400 Fax 708-459-2708 flH H C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e C ross R e fe re n c e Competitor Page
|
OCR Scan
|
CLUY164
TLY113A
TLY113AP
TLY113AQ
TLY114A
TLY114AP
CMD3450
CMD5454A
M15098
MS90451-7152
MS25237-387
ms24515
MS25237-327
MS24367-715AS15
MS25231-313
MS25237
OL387
MS15571-11
|
PDF
|
2N6428A
Abstract: No abstract text available
Text: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage
|
OCR Scan
|
N6428/6428A
2N6428A
|
PDF
|
N5089
Abstract: 2N5088
Text: MAXIMUM RATINGS Symbol 2N5088 2N5089 Unit C o lle ctor-E m itter V o ltage v CEO 30 25 Vdc C ollector-Base V o ltage v CBO 35 30 Vdc Em itter-Base V o ltage v EBO 3.0 Vdc C o lle ctor C u rre n t — C o ntinuous •c 50 m A dc Total Device D issipa tion Derate above 25°C
|
OCR Scan
|
2N5088
2N5089
2N5088
N5089
|
PDF
|
stm 8309
Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
Text: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C
|
OCR Scan
|
M39003/01/02/03/04/06/09
MIL-C-39003
CSR09,
M39003/02
CSR13,
M39003/01
CSR21,
M39003/09
CSR23,
M39003/03
stm 8309
m3003
L 0904 8178
bat 63-03
HF 4053
C2899
pa 3029 b
MARKING 8042
M3003 16
aw 7199
|
PDF
|
