C 4055 TRANSISTOR Search Results

IRF620

Contextual Info: HE D I 4055*452 GOGflMflQ Ü | 3 7 -"tf Data Sheet No. PD-9.317G INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET’ TRANSISTORS IOR IRF620 IRF621 'd IRF6SS N-Channel Ls 200 Volt, 0.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International Rec­

Contextual Info: 11E D | INTERNATIONAL R E C T I F I E R 4055 45 2 0 0 00 3 0 0 4 | Data Sheet No. PD-9.525A T -35-25 IN T E R N A T IO N A L R E C T IF IE R IOR AVALANCHE AND dv/dt RATED HEXFET IRFR220 TRANSISTORS IRFR222 IRFU220 N -C H A N N E L IRFU222 Product Summary 200 Volt, 0.80 Ohm HEXFET

C 4055 transistor

Abstract: 2N2221AX
Contextual Info: 2N2221AX MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED SWITCHING BIPOLAR NPN TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) FEATURES 0.48 (0.019) 0.41 (0.016)

marking 2U 95 diode

Abstract: automatic room power control circuit block diagra Pin Diagram of ic 4086 datasheet LTC1733 LTC4055 LTC4055EUF LTC4411 MO-220
Contextual Info: LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input Current Compliance Automatic Battery Switchover When Input Supply

48v regulated battery charger

Abstract: LTC1733 LTC1734 LTC4055 LTC4055EUF MO-220 automatic room power control circuit block diagra ntc 100K
Contextual Info: Electrical Specifications Subject to Change LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input

Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320

2sc4061

Contextual Info: High Speed Switching Transistors F X series ITO-220 Bipolar transistors NPN Type No. EIAJ T0-220 Absolute Maximum Ratings Electrical Characteristics V c eo VCE (min) (sat) (max) [V ] jc fT ton V be (sat) (max) (max) (typ) (max) [V ] [•c /w ] [M H z]

Contextual Info: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)

ITO-220

Contextual Info: High Speed Switching Transistors FX series ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VcEO V be ft ton VcE 0jc ts tf (sat) (sat) (min) (max) (max) (max) (typ) (max) (max) (max) [V ] [V] fc/w] [MHz] U s ]

Contextual Info: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1

ts 4052

Abstract: 2sc 5241
Contextual Info: High Speed Switching Transistors FX series B ipolar transistors NPN ITO-220 TO -220 A bsolute M axim um Ratings VcEO V ebo Ic [V] [V] [A] 2SC4051 4052 Type No. E lectrical C haracteristics VcE V cE O IlFE (min) V be d jc (sat) (sat) (m ax) (m ax) (max) ton

ITO-220

Abstract: "Bipolar Transistors"
Contextual Info: Ir'M ITO-220 Bipolar transistors NPN T O -220 Absolute Maximum Ratings Electrical Characteristics VCEO (sus) (min) [V ] hFE VcE (sat) (max) V be 6\o fT (sat) (max) (max) (typ) [°C /W ] [M H z ] [V ] ton ts tf (max) (max) M M (max) U s] Outline Type No.

tf s 544 a

Contextual Info: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings

ic 4580

Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
Contextual Info: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)

CIMRF7Z4011

Contextual Info: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen

CIMR-F7Z40151

Contextual Info: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control

Contextual Info: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­

CIMR-G7C4090

Abstract: CIMR-G7C4055
Contextual Info: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG

c 945 TRANSISTOR equivalent

Contextual Info: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the

TRANSISTOR 2FE

Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: Provisional Data Sheet No. PD-9.1551 IQR Rectifier HEXFET POWER MOSFET IRFN350 N - CHA N N E L Product Summary 400 Volt, 0.315fi HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­ cient geometry achieves very low on-state resistancecom­

Contextual Info: In te r n a tio n a l 549 provisional Data Sheet No. PD-9.1 IGR R ectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L Product Summary 200 Volt, 0.100ft HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

transistor C946

Contextual Info: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V ces = 600V Short circuit rated -10ns @125°C, VGE= 15V Switching-loss rating includes all "tail" losses

EN3475

Abstract: KEP66 MC100 MC100EP16VC MC100EP16VCD MC100EP16VCDR2 transistor 3005 33
Contextual Info: MC100EP16VC 3.3V / 5VĄECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a world–class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output.