C 3298 TRANSISTOR Search Results

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1305A 2SA1306B 2SC3298A to-22 2SC3298 2SC3298B 2SA1306 Y
Contextual Info: AOK AOK Semiconductor P roduct Specification 2SA1306 2SA 1306A 2SA1306B Silicon PNP P o w er Transistors DESCRIPTIO N • W ith T D -2 2 0 F a package • C om plem ent to type 2S C 3298 ,2S C 3298A ,2S C 3298B A PP LIC A TIO N S • P ow er am plifie r applications

BUY82

Contextual Info: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

transistor c 3298

Abstract: C 3298 TRANSISTOR
Contextual Info: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

C 3298 TRANSISTOR

Abstract: transistor c 3298 BUY82
Contextual Info: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 •NOVEMBER 1995_ FEATURES * 100 V olt VCE0 * 4 Am ps continuous current * * Up to 10 Am ps peak current Very low saturation voltage * Ptot=1.2 W atts ABSOLUTE MAXIMUM RATINGS.

ZTX853

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.

ZTX853

Abstract: C 3298 TRANSISTOR
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

switching TRANSISTOR mosfet 30V 40A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT75N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION „ 1 The UTC UT75N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT75N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT75N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

CEP76139

Abstract: cep76139 equivalent 3298
Contextual Info: CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS ON = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

MPS-H20

Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

LH154Q01

Abstract: LCD MIPI PANEL sharp
Contextual Info: www.panelook.com Global LCD Panel Exchange Center LH154Q01 Liquid Crystal Display Product Specification 1. GENERAL DESCRIPTION The LH154Q01 is a Color Active Matrix Liquid Crystal Display with Light Emission Diode LED backlight system. The matrix employs a-Si Thin Film Transistor as the active element.

8N35

Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high

CV10253

Contextual Info: MO TOR OLA SC XSTRS/R F 12E D | b3b7HS4 ÜGflbSOI S | CV10253 CV12253 C A SE 79-04, STYLE 1 TO-39 TO-20SAD M A X IM U M R A TIN G S Sym bol V a lu e C o lle c t o r - E m it t e r V o lta g e VCEO 65 Vdc C o lle c t o r - B a s e V o lta g e VCBO 65 Vdc

transistor f422

Abstract: f422 IRFF420 IRFF422 IRFF421 IRFF423 RFF422
Contextual Info: Standard Power MOSFETs - IRFF420, IRFF421, IRFF422, IRFF423 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1.4A and 1.6A, 450V - 500V r DS on = 3.00 and 4.0fi N-CHANNEL ENHANCEMENT MODE Features: • m m m ■

MTPBP10

Abstract: UL-44 l44 transistor transistor L44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed

558z

Abstract: se130 221A-06 221D BUL44 BUL44F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U L 44* BUL44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Device POWER TRANSISTOR 2.0 AM PERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed

S1D15605

Abstract: S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565
Contextual Info: 8. S1D15605 Series Rev. 2.4a Contents 1. DESCRIPTION . 8-1 2. FEATURES . 8-1

Driver

Abstract: S1D15605D11B k 3918 regulator D1565 k 3918 TRANSISTOR S1D15606 S1D15607 5252 F 1114 S1D15605D00B S1D15606D01B
Contextual Info: S1D15605 Series Technical Manual Rev.2.4a NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

3842A

Contextual Info: ^ ¡application • I INFO ■ I available | 1 U N IT R O D E UC1842A /3 A /4 A/5 A U C 2842A /3A /4A /5A U C 3842A /3A /4A /5A Current Mode PWM Controller FEATURES DESCRIPTION • Optimized for Off-line and DC to DC Converters • Low Start Up Current <0.5mA