BUY82
Abstract: No abstract text available
Text: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUY82
O205AD)
20MHz
BUY82
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transistor c 3298
Abstract: C 3298 TRANSISTOR
Text: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUY82
O205AD)
100mA
transistor c 3298
C 3298 TRANSISTOR
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C 3298 TRANSISTOR
Abstract: transistor c 3298 BUY82
Text: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUY82
O205AD)
20MHz
C 3298 TRANSISTOR
transistor c 3298
BUY82
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Untitled
Abstract: No abstract text available
Text: BUY82 NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE MECHANICAL DATA Dimensions in mm Inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUY82
O205AD)
20MHz
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ZTX853
Abstract: DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX853
100mA,
50MHz
100mA
100ms
ZTX853
DSA003778
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ZTX853
Abstract: C 3298 TRANSISTOR
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.
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ZTX853
ZTX853
C 3298 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
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ZTX853
100ms
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switching TRANSISTOR mosfet 30V 40A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT75N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION 1 The UTC UT75N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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UT75N03
UT75N03
O-220
UT75N03L
UT75N03G
UT75N03-TA3-T
UT75N03L-TA3-T
UT75N03G-TA3-T
switching TRANSISTOR mosfet 30V 40A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT75N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT75N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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UT75N03
UT75N03
UT75N03L-TA3-T
UT75N03G-TA3-T
O-220
QW-R502-327
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CEP76139
Abstract: cep76139 equivalent 3298
Text: CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS ON = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP76139/CEB76139
O-220
O-263
CEP76139
cep76139 equivalent
3298
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CEP76139
Abstract: 638ns
Text: CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS ON = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP76139/CEB76139
O-220
O-263
CEP76139
638ns
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MPS-H20
Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MPS-H20
npn, transistor, sc 107 b
MV400
3 w RF POWER TRANSISTOR NPN
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LH154Q01
Abstract: LCD MIPI PANEL sharp
Text: www.panelook.com Global LCD Panel Exchange Center LH154Q01 Liquid Crystal Display Product Specification 1. GENERAL DESCRIPTION The LH154Q01 is a Color Active Matrix Liquid Crystal Display with Light Emission Diode LED backlight system. The matrix employs a-Si Thin Film Transistor as the active element.
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LH154Q01
LH154Q01
LCD MIPI PANEL sharp
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S1D15605
Abstract: S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565
Text: 8. S1D15605 Series Rev. 2.4a Contents 1. DESCRIPTION . 8-1 2. FEATURES . 8-1
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S1D15605
S1D15605D11B
k 3918
k 3918 TRANSISTOR
s1d1
S1D15605D00B
S1D15605T00
transistor 2222
S1D15607
d1565
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2SA1306
Abstract: 2SA1306A 2SA1306 2SC3298 2SA1305A 2SA1306B 2SC3298A to-22 2SC3298 2SC3298B 2SA1306 Y
Text: AOK AOK Semiconductor P roduct Specification 2SA1306 2SA 1306A 2SA1306B Silicon PNP P o w er Transistors DESCRIPTIO N • W ith T D -2 2 0 F a package • C om plem ent to type 2S C 3298 ,2S C 3298A ,2S C 3298B A PP LIC A TIO N S • P ow er am plifie r applications
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2SA1306
2SA1306A
2SA1306B
2SC3298
2SC3298A
2SC3298B
2SA1306
2SA1306B
2SA1306 2SC3298
2SA1305A
to-22
2SA1306 Y
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 •NOVEMBER 1995_ FEATURES * 100 V olt VCE0 * 4 Am ps continuous current * * Up to 10 Am ps peak current Very low saturation voltage * Ptot=1.2 W atts ABSOLUTE MAXIMUM RATINGS.
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OCR Scan
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100mA,
50MHz
100mA
r100mA,
GD1D211
ZTX853
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PDF
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ZTX853
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.
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Tamb-25Â
ZTX853
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.
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100mA
100mA,
300ns.
ZTX853
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PDF
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8N35
Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Text: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high
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b3b72S4
MTH8N35
MTH8N40
MTM8N35
MTM8N40
O-29UA
O-218AC
YI4SH1962.
8N35
72SM
AN569
MTM8N40
TMOS
8IM40
MTH8
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CV10253
Abstract: No abstract text available
Text: MO TOR OLA SC XSTRS/R F 12E D | b3b7HS4 ÜGflbSOI S | CV10253 CV12253 C A SE 79-04, STYLE 1 TO-39 TO-20SAD M A X IM U M R A TIN G S Sym bol V a lu e C o lle c t o r - E m it t e r V o lta g e VCEO 65 Vdc C o lle c t o r - B a s e V o lta g e VCBO 65 Vdc
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CV10253
CV12253
O-20SAD)
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PDF
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transistor f422
Abstract: f422 IRFF420 IRFF422 IRFF421 IRFF423 RFF422
Text: Standard Power MOSFETs - IRFF420, IRFF421, IRFF422, IRFF423 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1.4A and 1.6A, 450V - 500V r DS on = 3.00 and 4.0fi N-CHANNEL ENHANCEMENT MODE Features: • m m m ■
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IRFF420,
IRFF421,
IRFF422,
IRFF423
92CS-3374I
IRFF422
IRFF423
transistor f422
f422
IRFF420
IRFF421
RFF422
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MTPBP10
Abstract: UL-44 l44 transistor transistor L44
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed
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BUL44/BUL44F
MTPBP10
UL-44
l44 transistor
transistor L44
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558z
Abstract: se130 221A-06 221D BUL44 BUL44F
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U L 44* BUL44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Device POWER TRANSISTOR 2.0 AM PERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed
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BUL44/BUL44F
O-220
T0-220
BUL44F,
AN1040.
558z
se130
221A-06
221D
BUL44
BUL44F
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PDF
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3842A
Abstract: No abstract text available
Text: ^ ¡application • I INFO ■ I available | 1 U N IT R O D E UC1842A /3 A /4 A/5 A U C 2842A /3A /4A /5A U C 3842A /3A /4A /5A Current Mode PWM Controller FEATURES DESCRIPTION • Optimized for Off-line and DC to DC Converters • Low Start Up Current <0.5mA
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UC1842A
500kHz
UC1843A
UC1844A
UC1845A
UC1842A/3
UC3842/3/4/5ply
95VAC
130VA
3842A
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